KR970072497A - A method of manufacturing an active matrix substrate and an active matrix substrate - Google Patents
A method of manufacturing an active matrix substrate and an active matrix substrate Download PDFInfo
- Publication number
- KR970072497A KR970072497A KR1019960010637A KR19960010637A KR970072497A KR 970072497 A KR970072497 A KR 970072497A KR 1019960010637 A KR1019960010637 A KR 1019960010637A KR 19960010637 A KR19960010637 A KR 19960010637A KR 970072497 A KR970072497 A KR 970072497A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- semiconductor layer
- etch stopper
- depositing
- protective insulating
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 10
- 239000011159 matrix material Substances 0.000 title abstract description 5
- 238000004519 manufacturing process Methods 0.000 title abstract description 3
- 239000004065 semiconductor Substances 0.000 claims abstract 14
- 230000001681 protective effect Effects 0.000 claims abstract 7
- 238000000151 deposition Methods 0.000 claims 6
- 239000012535 impurity Substances 0.000 claims 6
- 239000011521 glass Substances 0.000 claims 5
- 239000002184 metal Substances 0.000 claims 5
- 238000000059 patterning Methods 0.000 claims 5
- 238000005530 etching Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78663—Amorphous silicon transistors
- H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
본 발명은 액티브 매트릭스 기판의 제조방법 및 그 방법에 의해 제조되는 액티브 매트릭스기판에 관한 것으로 소스버스 및 드레인 배선과 반도체층을 동시에 패터닝하고, 스스전극 및 드레인전극은 보호절연막을 마스크로하여 형성함으로써 패턴형성을 위한 마스크 공정의 수를 줄여 비용을 절감하고 수율을 향상시켰다.The present invention relates to a method of manufacturing an active matrix substrate and an active matrix substrate manufactured by the method, in which a source bus and a drain wiring and a semiconductor layer are simultaneously patterned, and a source electrode and a drain electrode are formed using a protective insulating film as a mask, Reducing the number of mask processes for formation, thereby reducing costs and improving yield.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.
제3도는 본 발명의 실시예에 따른 액티브 매트릭스 기판의 제조과정을 나타내는 도면이다.FIG. 3 is a view illustrating a manufacturing process of an active matrix substrate according to an embodiment of the present invention.
Claims (2)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960010637A KR100202236B1 (en) | 1996-04-09 | 1996-04-09 | Active matrix panel and its making method |
FR9702841A FR2747237B1 (en) | 1996-04-09 | 1997-03-11 | LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF |
GB9706824A GB2312092B (en) | 1996-04-09 | 1997-04-04 | Liquid crystal display and method of manufacturing the same |
JP10525597A JP4034376B2 (en) | 1996-04-09 | 1997-04-08 | Manufacturing method of active matrix type liquid crystal display device |
DE19714690A DE19714690C2 (en) | 1996-04-09 | 1997-04-09 | Manufacturing method for a thin film transistor, thin film transistor and liquid crystal display device constructed therefrom |
JP2007059644A JP4117369B2 (en) | 1996-04-09 | 2007-03-09 | Active matrix liquid crystal display device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960010637A KR100202236B1 (en) | 1996-04-09 | 1996-04-09 | Active matrix panel and its making method |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970072497A true KR970072497A (en) | 1997-11-07 |
KR100202236B1 KR100202236B1 (en) | 1999-07-01 |
Family
ID=19455336
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960010637A KR100202236B1 (en) | 1996-04-09 | 1996-04-09 | Active matrix panel and its making method |
Country Status (5)
Country | Link |
---|---|
JP (2) | JP4034376B2 (en) |
KR (1) | KR100202236B1 (en) |
DE (1) | DE19714690C2 (en) |
FR (1) | FR2747237B1 (en) |
GB (1) | GB2312092B (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100538293B1 (en) * | 1998-04-03 | 2006-03-17 | 삼성전자주식회사 | Method of manufacturing flat drive liquid crystal display |
TW525216B (en) * | 2000-12-11 | 2003-03-21 | Semiconductor Energy Lab | Semiconductor device, and manufacturing method thereof |
SG111923A1 (en) | 2000-12-21 | 2005-06-29 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
KR100980015B1 (en) * | 2003-08-19 | 2010-09-03 | 삼성전자주식회사 | Thin film transistor array panel and manufacturing method thereof |
KR102183920B1 (en) | 2013-12-16 | 2020-11-30 | 삼성디스플레이 주식회사 | Thin film transistor array panel and method of manufacturing the same |
CN104022126B (en) * | 2014-05-28 | 2017-04-12 | 京东方科技集团股份有限公司 | Array substrate and manufacturing method thereof, and display apparatus |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2629743B2 (en) * | 1987-10-08 | 1997-07-16 | カシオ計算機株式会社 | Method for manufacturing thin film transistor |
US5173753A (en) * | 1989-08-10 | 1992-12-22 | Industrial Technology Research Institute | Inverted coplanar amorphous silicon thin film transistor which provides small contact capacitance and resistance |
US5130263A (en) * | 1990-04-17 | 1992-07-14 | General Electric Company | Method for photolithographically forming a selfaligned mask using back-side exposure and a non-specular reflecting layer |
DE69115405T2 (en) * | 1990-09-21 | 1996-06-13 | Casio Computer Co Ltd | Thin film transistor and a thin film transistor panel using such transistors |
WO1992006505A1 (en) * | 1990-10-05 | 1992-04-16 | General Electric Company | Thin film transistor stucture with improved source/drain contacts |
KR920010885A (en) * | 1990-11-30 | 1992-06-27 | 카나이 쯔또무 | Thin film semiconductor, manufacturing method and manufacturing apparatus and image processing apparatus |
EP0545327A1 (en) * | 1991-12-02 | 1993-06-09 | Matsushita Electric Industrial Co., Ltd. | Thin-film transistor array for use in a liquid crystal display |
EP0566838A3 (en) * | 1992-02-21 | 1996-07-31 | Matsushita Electric Ind Co Ltd | Manufacturing method of thin film transistor |
US5539219A (en) * | 1995-05-19 | 1996-07-23 | Ois Optical Imaging Systems, Inc. | Thin film transistor with reduced channel length for liquid crystal displays |
-
1996
- 1996-04-09 KR KR1019960010637A patent/KR100202236B1/en not_active IP Right Cessation
-
1997
- 1997-03-11 FR FR9702841A patent/FR2747237B1/en not_active Expired - Lifetime
- 1997-04-04 GB GB9706824A patent/GB2312092B/en not_active Expired - Lifetime
- 1997-04-08 JP JP10525597A patent/JP4034376B2/en not_active Expired - Lifetime
- 1997-04-09 DE DE19714690A patent/DE19714690C2/en not_active Expired - Lifetime
-
2007
- 2007-03-09 JP JP2007059644A patent/JP4117369B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP4034376B2 (en) | 2008-01-16 |
FR2747237A1 (en) | 1997-10-10 |
JP2007206712A (en) | 2007-08-16 |
GB2312092A (en) | 1997-10-15 |
GB2312092B (en) | 1998-06-03 |
DE19714690A1 (en) | 1997-10-30 |
FR2747237B1 (en) | 1999-04-16 |
JP4117369B2 (en) | 2008-07-16 |
DE19714690C2 (en) | 2003-12-11 |
GB9706824D0 (en) | 1997-05-21 |
JPH1039331A (en) | 1998-02-13 |
KR100202236B1 (en) | 1999-07-01 |
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