DE19705342A1 - Verbessertes Selbstjustierendes Silicid-Herstellungsverfahren - Google Patents
Verbessertes Selbstjustierendes Silicid-HerstellungsverfahrenInfo
- Publication number
- DE19705342A1 DE19705342A1 DE19705342A DE19705342A DE19705342A1 DE 19705342 A1 DE19705342 A1 DE 19705342A1 DE 19705342 A DE19705342 A DE 19705342A DE 19705342 A DE19705342 A DE 19705342A DE 19705342 A1 DE19705342 A1 DE 19705342A1
- Authority
- DE
- Germany
- Prior art keywords
- heat
- resistant metal
- metal layer
- gate
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 229910021332 silicide Inorganic materials 0.000 title claims abstract description 16
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 title claims description 22
- 230000008569 process Effects 0.000 title claims description 9
- 238000009792 diffusion process Methods 0.000 claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 229910021341 titanium silicide Inorganic materials 0.000 claims abstract description 11
- 238000002425 crystallisation Methods 0.000 claims abstract description 7
- 230000008025 crystallization Effects 0.000 claims abstract description 6
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 3
- 230000003746 surface roughness Effects 0.000 claims abstract description 3
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 18
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 17
- 239000010936 titanium Substances 0.000 claims description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 16
- 229910052719 titanium Inorganic materials 0.000 claims description 16
- 238000001039 wet etching Methods 0.000 claims description 10
- 229910052786 argon Inorganic materials 0.000 claims description 8
- 238000004381 surface treatment Methods 0.000 claims description 7
- 125000006850 spacer group Chemical group 0.000 claims description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- 229910001868 water Inorganic materials 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 3
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 3
- 238000004151 rapid thermal annealing Methods 0.000 claims description 3
- 238000005496 tempering Methods 0.000 claims description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- 239000002253 acid Substances 0.000 claims 1
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 239000012298 atmosphere Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 239000011435 rock Substances 0.000 claims 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- LFVGISIMTYGQHF-UHFFFAOYSA-N ammonium dihydrogen phosphate Chemical compound [NH4+].OP(O)([O-])=O LFVGISIMTYGQHF-UHFFFAOYSA-N 0.000 description 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 1
- 244000052616 bacterial pathogen Species 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 210000004072 lung Anatomy 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- 238000012549 training Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW085109703A TW328153B (en) | 1996-08-09 | 1996-08-09 | The manufacturing method for improving property of salicide |
| GB9625173A GB2320130B (en) | 1996-08-09 | 1996-12-04 | Improved self-ligned silicide manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE19705342A1 true DE19705342A1 (de) | 1998-02-12 |
Family
ID=26310543
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19705342A Ceased DE19705342A1 (de) | 1996-08-09 | 1997-02-12 | Verbessertes Selbstjustierendes Silicid-Herstellungsverfahren |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP3258934B2 (ja) |
| DE (1) | DE19705342A1 (ja) |
| FR (1) | FR2752331B1 (ja) |
| GB (1) | GB2320130B (ja) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3295931B2 (ja) * | 1999-04-28 | 2002-06-24 | 日本電気株式会社 | 半導体装置の製造方法 |
| GB0024648D0 (en) | 2000-10-07 | 2000-11-22 | Bae Systems Plc | A method and apparatus for assembling an aircraft wheel or brake component on an axle of an undercarriage |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3497407A (en) * | 1966-12-28 | 1970-02-24 | Ibm | Etching of semiconductor coatings of sio2 |
| US4545116A (en) * | 1983-05-06 | 1985-10-08 | Texas Instruments Incorporated | Method of forming a titanium disilicide |
| US4983544A (en) * | 1986-10-20 | 1991-01-08 | International Business Machines Corporation | Silicide bridge contact process |
| GB2214708A (en) * | 1988-01-20 | 1989-09-06 | Philips Nv | A method of manufacturing a semiconductor device |
| JPH0260126A (ja) * | 1988-08-26 | 1990-02-28 | Toshiba Corp | 半導体装置及びその製造方法 |
| JPH02297939A (ja) * | 1989-05-12 | 1990-12-10 | Matsushita Electron Corp | 半導体集積回路装置の製造方法 |
| JPH04107920A (ja) * | 1990-08-29 | 1992-04-09 | Fujitsu Ltd | 半導体装置の製造方法 |
| JP3285934B2 (ja) * | 1991-07-16 | 2002-05-27 | 株式会社東芝 | 半導体装置の製造方法 |
| US5344793A (en) * | 1993-03-05 | 1994-09-06 | Siemens Aktiengesellschaft | Formation of silicided junctions in deep sub-micron MOSFETs by defect enhanced CoSi2 formation |
| JP2611726B2 (ja) * | 1993-10-07 | 1997-05-21 | 日本電気株式会社 | 半導体装置の製造方法 |
| JP3046208B2 (ja) * | 1994-08-05 | 2000-05-29 | 新日本製鐵株式会社 | シリコンウェハおよびシリコン酸化物の洗浄液 |
| JP3329128B2 (ja) * | 1995-03-28 | 2002-09-30 | ソニー株式会社 | 半導体装置の製造方法 |
-
1996
- 1996-12-04 GB GB9625173A patent/GB2320130B/en not_active Expired - Fee Related
- 1996-12-31 FR FR9616293A patent/FR2752331B1/fr not_active Expired - Fee Related
-
1997
- 1997-02-12 DE DE19705342A patent/DE19705342A1/de not_active Ceased
- 1997-05-23 JP JP15047497A patent/JP3258934B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| GB2320130A (en) | 1998-06-10 |
| FR2752331B1 (fr) | 1998-11-06 |
| GB9625173D0 (en) | 1997-01-22 |
| JP3258934B2 (ja) | 2002-02-18 |
| FR2752331A1 (fr) | 1998-02-13 |
| GB2320130B (en) | 2001-11-07 |
| JPH1079508A (ja) | 1998-03-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| 8131 | Rejection |