GB2320130B - Improved self-ligned silicide manufacturing method - Google Patents

Improved self-ligned silicide manufacturing method

Info

Publication number
GB2320130B
GB2320130B GB9625173A GB9625173A GB2320130B GB 2320130 B GB2320130 B GB 2320130B GB 9625173 A GB9625173 A GB 9625173A GB 9625173 A GB9625173 A GB 9625173A GB 2320130 B GB2320130 B GB 2320130B
Authority
GB
United Kingdom
Prior art keywords
ligned
improved self
silicide manufacturing
silicide
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9625173A
Other versions
GB9625173D0 (en
GB2320130A (en
Inventor
Jason Jenq
Tung-Po Chen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
United Microelectronics Corp
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from TW085109703A external-priority patent/TW328153B/en
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to GB9625173A priority Critical patent/GB2320130B/en
Priority to FR9616293A priority patent/FR2752331B1/en
Publication of GB9625173D0 publication Critical patent/GB9625173D0/en
Priority to DE19705342A priority patent/DE19705342A1/en
Priority to JP15047497A priority patent/JP3258934B2/en
Publication of GB2320130A publication Critical patent/GB2320130A/en
Application granted granted Critical
Publication of GB2320130B publication Critical patent/GB2320130B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
GB9625173A 1996-08-09 1996-12-04 Improved self-ligned silicide manufacturing method Expired - Fee Related GB2320130B (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB9625173A GB2320130B (en) 1996-08-09 1996-12-04 Improved self-ligned silicide manufacturing method
FR9616293A FR2752331B1 (en) 1996-08-09 1996-12-31 IMPROVED SELF-ALIGNED SILICIDE PROCESS
DE19705342A DE19705342A1 (en) 1996-08-09 1997-02-12 Silicide process for MOS transistor
JP15047497A JP3258934B2 (en) 1996-08-09 1997-05-23 Improved method for producing self-aligned silicides

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW085109703A TW328153B (en) 1996-08-09 1996-08-09 The manufacturing method for improving property of salicide
GB9625173A GB2320130B (en) 1996-08-09 1996-12-04 Improved self-ligned silicide manufacturing method

Publications (3)

Publication Number Publication Date
GB9625173D0 GB9625173D0 (en) 1997-01-22
GB2320130A GB2320130A (en) 1998-06-10
GB2320130B true GB2320130B (en) 2001-11-07

Family

ID=26310543

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9625173A Expired - Fee Related GB2320130B (en) 1996-08-09 1996-12-04 Improved self-ligned silicide manufacturing method

Country Status (4)

Country Link
JP (1) JP3258934B2 (en)
DE (1) DE19705342A1 (en)
FR (1) FR2752331B1 (en)
GB (1) GB2320130B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3295931B2 (en) * 1999-04-28 2002-06-24 日本電気株式会社 Method for manufacturing semiconductor device
GB0024648D0 (en) 2000-10-07 2000-11-22 Bae Systems Plc A method and apparatus for assembling an aircraft wheel or brake component on an axle of an undercarriage

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4545116A (en) * 1983-05-06 1985-10-08 Texas Instruments Incorporated Method of forming a titanium disilicide
EP0325328A1 (en) * 1988-01-20 1989-07-26 Koninklijke Philips Electronics N.V. A method of manufacturing a semiconductor device using sputter etching
JPH02297939A (en) * 1989-05-12 1990-12-10 Matsushita Electron Corp Manufacture of semiconductor integrated circuit device
US4983544A (en) * 1986-10-20 1991-01-08 International Business Machines Corporation Silicide bridge contact process
EP0616361A1 (en) * 1993-03-05 1994-09-21 Siemens Aktiengesellschaft Formation of silicided junctions in deep sub-micron MOSFETS by defect enhanced CoSi2 formation

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3497407A (en) * 1966-12-28 1970-02-24 Ibm Etching of semiconductor coatings of sio2
JPH0260126A (en) * 1988-08-26 1990-02-28 Toshiba Corp Semiconductor device and manufacture thereof
JPH04107920A (en) * 1990-08-29 1992-04-09 Fujitsu Ltd Manufacture of semiconductor device
JP3285934B2 (en) * 1991-07-16 2002-05-27 株式会社東芝 Method for manufacturing semiconductor device
JP2611726B2 (en) * 1993-10-07 1997-05-21 日本電気株式会社 Method for manufacturing semiconductor device
JP3046208B2 (en) * 1994-08-05 2000-05-29 新日本製鐵株式会社 Cleaning liquid for silicon wafer and silicon oxide
JP3329128B2 (en) * 1995-03-28 2002-09-30 ソニー株式会社 Method for manufacturing semiconductor device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4545116A (en) * 1983-05-06 1985-10-08 Texas Instruments Incorporated Method of forming a titanium disilicide
US4983544A (en) * 1986-10-20 1991-01-08 International Business Machines Corporation Silicide bridge contact process
EP0325328A1 (en) * 1988-01-20 1989-07-26 Koninklijke Philips Electronics N.V. A method of manufacturing a semiconductor device using sputter etching
GB2214708A (en) * 1988-01-20 1989-09-06 Philips Nv A method of manufacturing a semiconductor device
JPH02297939A (en) * 1989-05-12 1990-12-10 Matsushita Electron Corp Manufacture of semiconductor integrated circuit device
EP0616361A1 (en) * 1993-03-05 1994-09-21 Siemens Aktiengesellschaft Formation of silicided junctions in deep sub-micron MOSFETS by defect enhanced CoSi2 formation

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Patent Abstracts of Japan, Section E, Section No 1037, Vol 15, No 78, Pg 118, 22/2/91 & JP 02 297939 A *

Also Published As

Publication number Publication date
GB9625173D0 (en) 1997-01-22
FR2752331A1 (en) 1998-02-13
DE19705342A1 (en) 1998-02-12
FR2752331B1 (en) 1998-11-06
GB2320130A (en) 1998-06-10
JPH1079508A (en) 1998-03-24
JP3258934B2 (en) 2002-02-18

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee