DE19646197B4 - Halbleiterspeichervorrichtung mit geteilten Wortleitungen - Google Patents

Halbleiterspeichervorrichtung mit geteilten Wortleitungen Download PDF

Info

Publication number
DE19646197B4
DE19646197B4 DE19646197A DE19646197A DE19646197B4 DE 19646197 B4 DE19646197 B4 DE 19646197B4 DE 19646197 A DE19646197 A DE 19646197A DE 19646197 A DE19646197 A DE 19646197A DE 19646197 B4 DE19646197 B4 DE 19646197B4
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
word lines
shared word
shared
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE19646197A
Other languages
English (en)
Other versions
DE19646197A1 (de
Inventor
Jun-Young Jeon
Gi-Won Cha
Sang-Jae Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE19646197A1 publication Critical patent/DE19646197A1/de
Application granted granted Critical
Publication of DE19646197B4 publication Critical patent/DE19646197B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/14—Word line organisation; Word line lay-out
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
DE19646197A 1995-11-09 1996-11-08 Halbleiterspeichervorrichtung mit geteilten Wortleitungen Expired - Fee Related DE19646197B4 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950040557A KR100204542B1 (ko) 1995-11-09 1995-11-09 멀티 서브워드라인 드라이버를 갖는 반도체 메모리장치

Publications (2)

Publication Number Publication Date
DE19646197A1 DE19646197A1 (de) 1997-05-15
DE19646197B4 true DE19646197B4 (de) 2005-04-28

Family

ID=19433580

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19646197A Expired - Fee Related DE19646197B4 (de) 1995-11-09 1996-11-08 Halbleiterspeichervorrichtung mit geteilten Wortleitungen

Country Status (6)

Country Link
US (1) US5812483A (de)
JP (1) JPH1031887A (de)
KR (1) KR100204542B1 (de)
DE (1) DE19646197B4 (de)
GB (1) GB2307076B (de)
TW (1) TW359826B (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5892703A (en) * 1997-06-13 1999-04-06 Micron Technology, Inc, Memory architecture and decoder addressing
KR100261174B1 (ko) * 1997-12-12 2000-07-01 김영환 비휘발성 강유전체 메모리 및 그의 제조 방법
KR100268908B1 (ko) * 1998-04-22 2000-10-16 김영환 에스더블유엘(swl) 강유전체 메모리 장치 및 그 구동회로
US6072711A (en) * 1997-12-12 2000-06-06 Lg Semicon Co., Ltd. Ferroelectric memory device without a separate cell plate line and method of making the same
US6144610A (en) * 1999-04-20 2000-11-07 Winbond Electronics Corporation Distributed circuits to turn off word lines in a memory array
JP4535563B2 (ja) * 2000-04-28 2010-09-01 ルネサスエレクトロニクス株式会社 半導体記憶装置
DE10038925A1 (de) * 2000-08-09 2002-03-14 Infineon Technologies Ag Elektronische Treiberschaltung für Wortleitungen einer Speichermatrix und Speichervorrichtung
US6594195B2 (en) 2001-09-17 2003-07-15 Cascade Semiconductor Corporation Low-power, high-density semiconductor memory device
CN100520964C (zh) * 2004-03-11 2009-07-29 富士通微电子株式会社 半导体存储器
US7170783B2 (en) * 2005-04-01 2007-01-30 Micron Technology, Inc. Layout for NAND flash memory array having reduced word line impedance
JP4907967B2 (ja) * 2005-12-01 2012-04-04 ルネサスエレクトロニクス株式会社 半導体記憶装置
KR100935725B1 (ko) 2007-12-18 2010-01-08 주식회사 하이닉스반도체 워드라인 구동 회로
US7916572B1 (en) 2008-07-28 2011-03-29 Altera Corporation Memory with addressable subword support
US8370935B1 (en) * 2009-08-17 2013-02-05 Fatskunk, Inc. Auditing a device
US8544089B2 (en) 2009-08-17 2013-09-24 Fatskunk, Inc. Auditing a device
US8375442B2 (en) * 2009-08-17 2013-02-12 Fatskunk, Inc. Auditing a device
US8949989B2 (en) 2009-08-17 2015-02-03 Qualcomm Incorporated Auditing a device
KR102109416B1 (ko) 2013-05-21 2020-05-12 삼성전자주식회사 서브 워드라인 드라이버를 갖는 반도체 메모리 장치 및 그것의 구동방법
JP2017147005A (ja) * 2016-02-16 2017-08-24 ルネサスエレクトロニクス株式会社 フラッシュメモリ
KR102493814B1 (ko) * 2016-06-29 2023-02-02 에스케이하이닉스 주식회사 메모리 장치
US11302365B2 (en) * 2018-09-27 2022-04-12 Synopsys, Inc. Area efficient and high-performance wordline segmented architecture
KR20210093607A (ko) 2020-01-20 2021-07-28 삼성전자주식회사 메모리 장치의 워드라인 구동 회로 및 그것의 동작 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5193074A (en) * 1990-02-09 1993-03-09 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device having hierarchical row selecting lines
US5319605A (en) * 1991-02-05 1994-06-07 Samsung Electronics Co., Ltd. Arrangement of word line driver stage for semiconductor memory device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5148401A (en) * 1989-02-02 1992-09-15 Oki Electric Industry Co., Ltd. DRAM with split word lines
JP2812099B2 (ja) * 1992-10-06 1998-10-15 日本電気株式会社 半導体メモリ
US5875148A (en) * 1993-01-29 1999-02-23 Oki Electric Industry Co., Ltd. Semiconductor memory
US5502683A (en) * 1993-04-20 1996-03-26 International Business Machines Corporation Dual ported memory with word line access control
JP2725570B2 (ja) * 1993-11-02 1998-03-11 日本電気株式会社 半導体メモリ装置
US5506816A (en) * 1994-09-06 1996-04-09 Nvx Corporation Memory cell array having compact word line arrangement

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5193074A (en) * 1990-02-09 1993-03-09 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device having hierarchical row selecting lines
US5319605A (en) * 1991-02-05 1994-06-07 Samsung Electronics Co., Ltd. Arrangement of word line driver stage for semiconductor memory device

Also Published As

Publication number Publication date
US5812483A (en) 1998-09-22
DE19646197A1 (de) 1997-05-15
GB9623412D0 (en) 1997-01-08
KR970029785A (ko) 1997-06-26
TW359826B (en) 1999-06-01
KR100204542B1 (ko) 1999-06-15
GB2307076A (en) 1997-05-14
GB2307076B (en) 1998-01-07
JPH1031887A (ja) 1998-02-03

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8364 No opposition during term of opposition
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20140603