DE1961641A1 - MOS-Bauelement - Google Patents
MOS-BauelementInfo
- Publication number
- DE1961641A1 DE1961641A1 DE19691961641 DE1961641A DE1961641A1 DE 1961641 A1 DE1961641 A1 DE 1961641A1 DE 19691961641 DE19691961641 DE 19691961641 DE 1961641 A DE1961641 A DE 1961641A DE 1961641 A1 DE1961641 A1 DE 1961641A1
- Authority
- DE
- Germany
- Prior art keywords
- silicon
- source
- gate electrode
- drain regions
- semiconductor material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010703 silicon Substances 0.000 claims description 126
- 229910052710 silicon Inorganic materials 0.000 claims description 125
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 101
- 239000004065 semiconductor Substances 0.000 claims description 56
- 239000000463 material Substances 0.000 claims description 47
- 239000012535 impurity Substances 0.000 claims description 32
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 15
- 239000000126 substance Substances 0.000 claims description 11
- 230000002452 interceptive effect Effects 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 78
- 239000000377 silicon dioxide Substances 0.000 description 39
- 235000012239 silicon dioxide Nutrition 0.000 description 35
- 229910052782 aluminium Inorganic materials 0.000 description 26
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 26
- 238000009413 insulation Methods 0.000 description 17
- 238000000034 method Methods 0.000 description 11
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 11
- 239000000370 acceptor Substances 0.000 description 8
- 238000009826 distribution Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 239000000356 contaminant Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910005540 GaP Inorganic materials 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- FRIKWZARTBPWBN-UHFFFAOYSA-N [Si].O=[Si]=O Chemical compound [Si].O=[Si]=O FRIKWZARTBPWBN-UHFFFAOYSA-N 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 241000881711 Acipenser sturio Species 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 235000007487 Calathea allouia Nutrition 0.000 description 1
- 244000278792 Calathea allouia Species 0.000 description 1
- 241001465754 Metazoa Species 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- -1 aluminum silicon dioxide silicon structure Chemical group 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- YVZQFSNXOYLGMJ-UHFFFAOYSA-L chloro(2-hydroxyethyl)mercury;1-hexadecylpyridin-1-ium;bromide Chemical compound [Br-].OCC[Hg]Cl.CCCCCCCCCCCCCCCC[N+]1=CC=CC=C1 YVZQFSNXOYLGMJ-UHFFFAOYSA-L 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000003806 hair structure Effects 0.000 description 1
- 238000003306 harvesting Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000005306 natural glass Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
Landscapes
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US78414468A | 1968-12-16 | 1968-12-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1961641A1 true DE1961641A1 (de) | 1970-07-30 |
Family
ID=25131479
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19691961641 Pending DE1961641A1 (de) | 1968-12-16 | 1969-12-09 | MOS-Bauelement |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS4815390B1 (enrdf_load_stackoverflow) |
| BE (1) | BE742820A (enrdf_load_stackoverflow) |
| BR (1) | BR6914737D0 (enrdf_load_stackoverflow) |
| CH (1) | CH518009A (enrdf_load_stackoverflow) |
| DE (1) | DE1961641A1 (enrdf_load_stackoverflow) |
| ES (1) | ES374600A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2026209A7 (enrdf_load_stackoverflow) |
| GB (1) | GB1297143A (enrdf_load_stackoverflow) |
| NL (1) | NL6918853A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2109915A1 (de) * | 1971-03-02 | 1972-09-07 | Ibm Deutschland | Oberflächengesteuerte Halbleiteranordnung |
| JPS549870B2 (enrdf_load_stackoverflow) * | 1972-10-04 | 1979-04-27 | ||
| JPS5522888A (en) * | 1978-09-05 | 1980-02-18 | Tdk Corp | Manufacturing method of insulation gate type semiconductor device |
-
1969
- 1969-11-21 GB GB1297143D patent/GB1297143A/en not_active Expired
- 1969-12-03 BR BR214737/69A patent/BR6914737D0/pt unknown
- 1969-12-05 FR FR6942134A patent/FR2026209A7/fr not_active Expired
- 1969-12-08 BE BE742820D patent/BE742820A/xx unknown
- 1969-12-09 DE DE19691961641 patent/DE1961641A1/de active Pending
- 1969-12-15 JP JP44100201A patent/JPS4815390B1/ja active Pending
- 1969-12-16 ES ES374600A patent/ES374600A1/es not_active Expired
- 1969-12-16 CH CH1875569A patent/CH518009A/de not_active IP Right Cessation
- 1969-12-16 NL NL6918853A patent/NL6918853A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB1297143A (enrdf_load_stackoverflow) | 1972-11-22 |
| BR6914737D0 (pt) | 1973-01-02 |
| ES374600A1 (es) | 1972-01-01 |
| FR2026209A7 (enrdf_load_stackoverflow) | 1970-09-18 |
| JPS4815390B1 (enrdf_load_stackoverflow) | 1973-05-14 |
| BE742820A (enrdf_load_stackoverflow) | 1970-05-14 |
| CH518009A (de) | 1972-01-15 |
| NL6918853A (enrdf_load_stackoverflow) | 1970-06-18 |
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