CH518009A - Halbleiteranordnung - Google Patents

Halbleiteranordnung

Info

Publication number
CH518009A
CH518009A CH1875569A CH1875569A CH518009A CH 518009 A CH518009 A CH 518009A CH 1875569 A CH1875569 A CH 1875569A CH 1875569 A CH1875569 A CH 1875569A CH 518009 A CH518009 A CH 518009A
Authority
CH
Switzerland
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
CH1875569A
Other languages
German (de)
English (en)
Inventor
Klein Thomas
Alto Palo
Faggin Feerico
Original Assignee
Fairchild Camera Instr Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera Instr Co filed Critical Fairchild Camera Instr Co
Publication of CH518009A publication Critical patent/CH518009A/de

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
CH1875569A 1968-12-16 1969-12-16 Halbleiteranordnung CH518009A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US78414468A 1968-12-16 1968-12-16

Publications (1)

Publication Number Publication Date
CH518009A true CH518009A (de) 1972-01-15

Family

ID=25131479

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1875569A CH518009A (de) 1968-12-16 1969-12-16 Halbleiteranordnung

Country Status (9)

Country Link
JP (1) JPS4815390B1 (enrdf_load_stackoverflow)
BE (1) BE742820A (enrdf_load_stackoverflow)
BR (1) BR6914737D0 (enrdf_load_stackoverflow)
CH (1) CH518009A (enrdf_load_stackoverflow)
DE (1) DE1961641A1 (enrdf_load_stackoverflow)
ES (1) ES374600A1 (enrdf_load_stackoverflow)
FR (1) FR2026209A7 (enrdf_load_stackoverflow)
GB (1) GB1297143A (enrdf_load_stackoverflow)
NL (1) NL6918853A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2109915A1 (de) * 1971-03-02 1972-09-07 Ibm Deutschland Oberflächengesteuerte Halbleiteranordnung
JPS549870B2 (enrdf_load_stackoverflow) * 1972-10-04 1979-04-27
JPS5522888A (en) * 1978-09-05 1980-02-18 Tdk Corp Manufacturing method of insulation gate type semiconductor device

Also Published As

Publication number Publication date
GB1297143A (enrdf_load_stackoverflow) 1972-11-22
BR6914737D0 (pt) 1973-01-02
ES374600A1 (es) 1972-01-01
FR2026209A7 (enrdf_load_stackoverflow) 1970-09-18
JPS4815390B1 (enrdf_load_stackoverflow) 1973-05-14
BE742820A (enrdf_load_stackoverflow) 1970-05-14
DE1961641A1 (de) 1970-07-30
NL6918853A (enrdf_load_stackoverflow) 1970-06-18

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Legal Events

Date Code Title Description
PL Patent ceased