DE19548053A1 - Verfahren zum Betrieb einer SRAM MOS-Transistor Speicherzelle - Google Patents

Verfahren zum Betrieb einer SRAM MOS-Transistor Speicherzelle

Info

Publication number
DE19548053A1
DE19548053A1 DE19548053A DE19548053A DE19548053A1 DE 19548053 A1 DE19548053 A1 DE 19548053A1 DE 19548053 A DE19548053 A DE 19548053A DE 19548053 A DE19548053 A DE 19548053A DE 19548053 A1 DE19548053 A1 DE 19548053A1
Authority
DE
Germany
Prior art keywords
memory cell
transistor
sram
vdd
bit line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19548053A
Other languages
German (de)
English (en)
Inventor
Joerg Dr Berthold
Juergen Dresel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE19548053A priority Critical patent/DE19548053A1/de
Priority to DE59602127T priority patent/DE59602127D1/de
Priority to US09/091,713 priority patent/US5973965A/en
Priority to JP9523207A priority patent/JPH11510300A/ja
Priority to PCT/DE1996/002394 priority patent/WO1997023878A2/fr
Priority to EP96946189A priority patent/EP0868725B1/fr
Priority to KR10-1998-0703764A priority patent/KR100491578B1/ko
Publication of DE19548053A1 publication Critical patent/DE19548053A1/de
Priority to HK98111909A priority patent/HK1010935A1/xx
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
DE19548053A 1995-12-21 1995-12-21 Verfahren zum Betrieb einer SRAM MOS-Transistor Speicherzelle Withdrawn DE19548053A1 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DE19548053A DE19548053A1 (de) 1995-12-21 1995-12-21 Verfahren zum Betrieb einer SRAM MOS-Transistor Speicherzelle
DE59602127T DE59602127D1 (de) 1995-12-21 1996-12-12 Verfahren zum betrieb einer sram mos-transistor speicherzelle
US09/091,713 US5973965A (en) 1995-12-21 1996-12-12 Method for operating a SRAM MOS transistor memory cell
JP9523207A JPH11510300A (ja) 1995-12-21 1996-12-12 Ｓｒａｍ―ｍｏｓトランジスタメモリセルの駆動方法
PCT/DE1996/002394 WO1997023878A2 (fr) 1995-12-21 1996-12-12 Procede d'actionnement d'une cellule de memoire ram statique a transistors mos
EP96946189A EP0868725B1 (fr) 1995-12-21 1996-12-12 Procede d'actionnement d'une cellule de memoire ram statique a transistors mos
KR10-1998-0703764A KR100491578B1 (ko) 1995-12-21 1996-12-12 Srammos트랜지스터메모리셀의구동방법
HK98111909A HK1010935A1 (en) 1995-12-21 1998-11-10 Method of operating an sram mos transistor storage cell sram

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19548053A DE19548053A1 (de) 1995-12-21 1995-12-21 Verfahren zum Betrieb einer SRAM MOS-Transistor Speicherzelle

Publications (1)

Publication Number Publication Date
DE19548053A1 true DE19548053A1 (de) 1997-07-03

Family

ID=7780961

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19548053A Withdrawn DE19548053A1 (de) 1995-12-21 1995-12-21 Verfahren zum Betrieb einer SRAM MOS-Transistor Speicherzelle
DE59602127T Expired - Lifetime DE59602127D1 (de) 1995-12-21 1996-12-12 Verfahren zum betrieb einer sram mos-transistor speicherzelle

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE59602127T Expired - Lifetime DE59602127D1 (de) 1995-12-21 1996-12-12 Verfahren zum betrieb einer sram mos-transistor speicherzelle

Country Status (7)

Country Link
US (1) US5973965A (fr)
EP (1) EP0868725B1 (fr)
JP (1) JPH11510300A (fr)
KR (1) KR100491578B1 (fr)
DE (2) DE19548053A1 (fr)
HK (1) HK1010935A1 (fr)
WO (1) WO1997023878A2 (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6804143B1 (en) 2003-04-02 2004-10-12 Cogent Chipware Inc. Write-assisted SRAM bit cell
US7915681B2 (en) 2007-06-18 2011-03-29 Infineon Technologies Ag Transistor with reduced charge carrier mobility
US7948791B1 (en) * 2009-01-15 2011-05-24 Xilinx, Inc. Memory array and method of implementing a memory array
FR2970589B1 (fr) 2011-01-19 2013-02-15 Centre Nat Rech Scient Cellule mémoire volatile/non volatile
FR2970593B1 (fr) 2011-01-19 2013-08-02 Centre Nat Rech Scient Cellule mémoire volatile/non volatile compacte
FR2970592B1 (fr) 2011-01-19 2013-02-15 Centre Nat Rech Scient Cellule mémoire volatile/non volatile programmable
FR2976712B1 (fr) 2011-06-15 2014-01-31 Centre Nat Rech Scient Element de memoire non-volatile
FR2976711B1 (fr) * 2011-06-15 2014-01-31 Centre Nat Rech Scient Cellule memoire avec memorisation volatile et non volatile
US8593861B2 (en) 2011-10-10 2013-11-26 International Business Machines Corporation Asymmetric memory cells
JP6115059B2 (ja) * 2012-09-20 2017-04-19 富士通株式会社 半導体記憶装置、及び、情報処理装置
FR3004576B1 (fr) 2013-04-15 2019-11-29 Commissariat A L'energie Atomique Et Aux Energies Alternatives Cellule memoire avec memorisation de donnees non volatile
FR3004577A1 (fr) 2013-04-15 2014-10-17 Commissariat Energie Atomique
FR3008219B1 (fr) 2013-07-05 2016-12-09 Commissariat Energie Atomique Dispositif a memoire non volatile

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4447891A (en) * 1980-09-26 1984-05-08 Matsushita Electric Industrial Co., Ltd. Simultaneous read-write IGFET memory cell
US5040146A (en) * 1989-04-21 1991-08-13 Siemens Aktiengesellschaft Static memory cell

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0233968B1 (fr) * 1986-02-21 1990-11-28 Ibm Deutschland Gmbh Cellule de mémoire statique sans commande d'horloge
JP3373632B2 (ja) * 1993-03-31 2003-02-04 株式会社東芝 不揮発性半導体記憶装置
JP3253745B2 (ja) * 1993-04-28 2002-02-04 富士通株式会社 半導体記憶装置
JP3609868B2 (ja) * 1995-05-30 2005-01-12 株式会社ルネサステクノロジ スタティック型半導体記憶装置
US5715191A (en) * 1995-10-25 1998-02-03 Matsushita Electric Industrial Co., Ltd. Static random access memory having variable supply voltages to the memory cells and method of operating thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4447891A (en) * 1980-09-26 1984-05-08 Matsushita Electric Industrial Co., Ltd. Simultaneous read-write IGFET memory cell
US5040146A (en) * 1989-04-21 1991-08-13 Siemens Aktiengesellschaft Static memory cell

Also Published As

Publication number Publication date
EP0868725B1 (fr) 1999-06-02
WO1997023878A2 (fr) 1997-07-03
KR100491578B1 (ko) 2005-08-05
KR19990071492A (ko) 1999-09-27
JPH11510300A (ja) 1999-09-07
US5973965A (en) 1999-10-26
HK1010935A1 (en) 1999-07-02
EP0868725A2 (fr) 1998-10-07
DE59602127D1 (de) 1999-07-08
WO1997023878A3 (fr) 1997-08-21

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8130 Withdrawal