HK1010935A1 - Method of operating an sram mos transistor storage cell sram - Google Patents
Method of operating an sram mos transistor storage cell sramInfo
- Publication number
- HK1010935A1 HK1010935A1 HK98111909A HK98111909A HK1010935A1 HK 1010935 A1 HK1010935 A1 HK 1010935A1 HK 98111909 A HK98111909 A HK 98111909A HK 98111909 A HK98111909 A HK 98111909A HK 1010935 A1 HK1010935 A1 HK 1010935A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- sram
- operating
- mos transistor
- storage cell
- transistor storage
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19548053A DE19548053A1 (de) | 1995-12-21 | 1995-12-21 | Verfahren zum Betrieb einer SRAM MOS-Transistor Speicherzelle |
PCT/DE1996/002394 WO1997023878A2 (fr) | 1995-12-21 | 1996-12-12 | Procede d'actionnement d'une cellule de memoire ram statique a transistors mos |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1010935A1 true HK1010935A1 (en) | 1999-07-02 |
Family
ID=7780961
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK98111909A HK1010935A1 (en) | 1995-12-21 | 1998-11-10 | Method of operating an sram mos transistor storage cell sram |
Country Status (7)
Country | Link |
---|---|
US (1) | US5973965A (fr) |
EP (1) | EP0868725B1 (fr) |
JP (1) | JPH11510300A (fr) |
KR (1) | KR100491578B1 (fr) |
DE (2) | DE19548053A1 (fr) |
HK (1) | HK1010935A1 (fr) |
WO (1) | WO1997023878A2 (fr) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6804143B1 (en) | 2003-04-02 | 2004-10-12 | Cogent Chipware Inc. | Write-assisted SRAM bit cell |
US7915681B2 (en) | 2007-06-18 | 2011-03-29 | Infineon Technologies Ag | Transistor with reduced charge carrier mobility |
US7948791B1 (en) * | 2009-01-15 | 2011-05-24 | Xilinx, Inc. | Memory array and method of implementing a memory array |
FR2970592B1 (fr) | 2011-01-19 | 2013-02-15 | Centre Nat Rech Scient | Cellule mémoire volatile/non volatile programmable |
FR2970593B1 (fr) | 2011-01-19 | 2013-08-02 | Centre Nat Rech Scient | Cellule mémoire volatile/non volatile compacte |
FR2970589B1 (fr) | 2011-01-19 | 2013-02-15 | Centre Nat Rech Scient | Cellule mémoire volatile/non volatile |
FR2976711B1 (fr) | 2011-06-15 | 2014-01-31 | Centre Nat Rech Scient | Cellule memoire avec memorisation volatile et non volatile |
FR2976712B1 (fr) | 2011-06-15 | 2014-01-31 | Centre Nat Rech Scient | Element de memoire non-volatile |
US8593861B2 (en) | 2011-10-10 | 2013-11-26 | International Business Machines Corporation | Asymmetric memory cells |
JP6115059B2 (ja) * | 2012-09-20 | 2017-04-19 | 富士通株式会社 | 半導体記憶装置、及び、情報処理装置 |
FR3004577A1 (fr) | 2013-04-15 | 2014-10-17 | Commissariat Energie Atomique | |
FR3004576B1 (fr) | 2013-04-15 | 2019-11-29 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Cellule memoire avec memorisation de donnees non volatile |
FR3008219B1 (fr) | 2013-07-05 | 2016-12-09 | Commissariat Energie Atomique | Dispositif a memoire non volatile |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5760586A (en) * | 1980-09-26 | 1982-04-12 | Matsushita Electric Ind Co Ltd | Random access memory |
DE3675925D1 (de) * | 1986-02-21 | 1991-01-10 | Ibm Deutschland | Statische speicherzelle ohne taktgeber. |
US5040146A (en) * | 1989-04-21 | 1991-08-13 | Siemens Aktiengesellschaft | Static memory cell |
JP3373632B2 (ja) * | 1993-03-31 | 2003-02-04 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JP3253745B2 (ja) * | 1993-04-28 | 2002-02-04 | 富士通株式会社 | 半導体記憶装置 |
JP3609868B2 (ja) * | 1995-05-30 | 2005-01-12 | 株式会社ルネサステクノロジ | スタティック型半導体記憶装置 |
US5715191A (en) * | 1995-10-25 | 1998-02-03 | Matsushita Electric Industrial Co., Ltd. | Static random access memory having variable supply voltages to the memory cells and method of operating thereof |
-
1995
- 1995-12-21 DE DE19548053A patent/DE19548053A1/de not_active Withdrawn
-
1996
- 1996-12-12 KR KR10-1998-0703764A patent/KR100491578B1/ko not_active IP Right Cessation
- 1996-12-12 DE DE59602127T patent/DE59602127D1/de not_active Expired - Lifetime
- 1996-12-12 US US09/091,713 patent/US5973965A/en not_active Expired - Lifetime
- 1996-12-12 WO PCT/DE1996/002394 patent/WO1997023878A2/fr active IP Right Grant
- 1996-12-12 JP JP9523207A patent/JPH11510300A/ja active Pending
- 1996-12-12 EP EP96946189A patent/EP0868725B1/fr not_active Expired - Lifetime
-
1998
- 1998-11-10 HK HK98111909A patent/HK1010935A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0868725A2 (fr) | 1998-10-07 |
DE59602127D1 (de) | 1999-07-08 |
WO1997023878A2 (fr) | 1997-07-03 |
DE19548053A1 (de) | 1997-07-03 |
KR19990071492A (ko) | 1999-09-27 |
JPH11510300A (ja) | 1999-09-07 |
WO1997023878A3 (fr) | 1997-08-21 |
KR100491578B1 (ko) | 2005-08-05 |
EP0868725B1 (fr) | 1999-06-02 |
US5973965A (en) | 1999-10-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20031211 |
|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |