DE19534922C1 - Verfahren zur Herstellung von Trichlorsilan und Silicium - Google Patents

Verfahren zur Herstellung von Trichlorsilan und Silicium

Info

Publication number
DE19534922C1
DE19534922C1 DE19534922A DE19534922A DE19534922C1 DE 19534922 C1 DE19534922 C1 DE 19534922C1 DE 19534922 A DE19534922 A DE 19534922A DE 19534922 A DE19534922 A DE 19534922A DE 19534922 C1 DE19534922 C1 DE 19534922C1
Authority
DE
Germany
Prior art keywords
reactor
silicon
trichlorosilane
gas
tetrachlorosilane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE19534922A
Other languages
German (de)
English (en)
Inventor
Rudolf Dipl Chem D Grieshammer
Franz Dipl Ing Koeppl
Franz Dipl Ing Schreieder
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wacker Chemie AG
Original Assignee
Wacker Chemie AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Chemie AG filed Critical Wacker Chemie AG
Priority to DE19534922A priority Critical patent/DE19534922C1/de
Priority to IT96RM000596A priority patent/IT1284881B1/it
Priority to KR1019960039747A priority patent/KR970015462A/ko
Priority to JP8246444A priority patent/JP2890253B2/ja
Priority to CA002185981A priority patent/CA2185981A1/en
Application granted granted Critical
Publication of DE19534922C1 publication Critical patent/DE19534922C1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/08Compounds containing halogen
    • C01B33/107Halogenated silanes
    • C01B33/1071Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/02Silicon
    • C01B33/021Preparation
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/02Silicon
    • C01B33/021Preparation
    • C01B33/027Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/08Compounds containing halogen
    • C01B33/107Halogenated silanes
    • C01B33/1071Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
    • C01B33/10742Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material
    • C01B33/10757Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material with the preferential formation of trichlorosilane
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/08Compounds containing halogen
    • C01B33/107Halogenated silanes
    • C01B33/10778Purification
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Silicon Compounds (AREA)
  • Devices And Processes Conducted In The Presence Of Fluids And Solid Particles (AREA)
DE19534922A 1995-09-21 1995-09-21 Verfahren zur Herstellung von Trichlorsilan und Silicium Expired - Fee Related DE19534922C1 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE19534922A DE19534922C1 (de) 1995-09-21 1995-09-21 Verfahren zur Herstellung von Trichlorsilan und Silicium
IT96RM000596A IT1284881B1 (it) 1995-09-21 1996-08-27 Procedimento pr la produzione di triclorosilano
KR1019960039747A KR970015462A (ko) 1995-09-21 1996-09-13 트리클로로실란의 제조방법
JP8246444A JP2890253B2 (ja) 1995-09-21 1996-09-18 トリクロロシランの製造方法
CA002185981A CA2185981A1 (en) 1995-09-21 1996-09-19 Process for preparing trichlorosilane

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19534922A DE19534922C1 (de) 1995-09-21 1995-09-21 Verfahren zur Herstellung von Trichlorsilan und Silicium

Publications (1)

Publication Number Publication Date
DE19534922C1 true DE19534922C1 (de) 1997-02-20

Family

ID=7772678

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19534922A Expired - Fee Related DE19534922C1 (de) 1995-09-21 1995-09-21 Verfahren zur Herstellung von Trichlorsilan und Silicium

Country Status (5)

Country Link
JP (1) JP2890253B2 (it)
KR (1) KR970015462A (it)
CA (1) CA2185981A1 (it)
DE (1) DE19534922C1 (it)
IT (1) IT1284881B1 (it)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0896952A1 (de) * 1997-08-14 1999-02-17 Wacker-Chemie GmbH Verfahren zur Herstellung von hochreinem Siliciumgranulat
WO2003087107A2 (de) * 2002-04-17 2003-10-23 Wacker-Chemie Gmbh Verfahren zur herstellung von halosilanen unter mikrowellenenergiebeaufschlagung
DE102007041803A1 (de) * 2007-08-30 2009-03-05 Pv Silicon Forschungs Und Produktions Gmbh Verfahren zur Herstellung von polykristallinen Siliziumstäben und polykristalliner Siliziumstab

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100333351B1 (ko) * 2000-04-26 2002-04-19 박종섭 데이터 레벨 안정화 회로
JP5527520B2 (ja) * 2006-12-01 2014-06-18 プロチミー インターナショナル,エルエルシー アルコキシシランの調製工程
JP4620694B2 (ja) * 2007-01-31 2011-01-26 株式会社大阪チタニウムテクノロジーズ 高純度トリクロロシランの製造方法
JP4714196B2 (ja) * 2007-09-05 2011-06-29 信越化学工業株式会社 トリクロロシランの製造方法および多結晶シリコンの製造方法
KR101117290B1 (ko) * 2009-04-20 2012-03-20 에이디알엠테크놀로지 주식회사 삼염화실란가스 제조용 반응장치
JP5535679B2 (ja) * 2010-02-18 2014-07-02 株式会社トクヤマ トリクロロシランの製造方法
JP6288626B2 (ja) * 2014-08-28 2018-03-07 東亞合成株式会社 トリクロロシランの製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1935895B2 (de) * 1969-07-15 1971-06-03 Deutsche Gold und Silber Scheide anstalt vormals Roessler, 6000 Frankfurt Verfahren zur herstellung von silikochloroform
US4526769A (en) * 1983-07-18 1985-07-02 Motorola, Inc. Trichlorosilane production process

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1935895B2 (de) * 1969-07-15 1971-06-03 Deutsche Gold und Silber Scheide anstalt vormals Roessler, 6000 Frankfurt Verfahren zur herstellung von silikochloroform
US4526769A (en) * 1983-07-18 1985-07-02 Motorola, Inc. Trichlorosilane production process

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
JP 57-1 40 311 A. In: Patents Abstr. of Japan, Sekt. C, Vol. 6(1982) Nr. 239(C-137) *
JP 57-1 40 312 A. In: Patents Abstr. of Japan, Sekt. C, Vol. 6(1982) Nr. 239(C-137) *
JP 59-45 919 A. In: Patents Abstr. of Japan, Sekt. C, Vol. 8(1984) Nr. 134 (C-230) *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0896952A1 (de) * 1997-08-14 1999-02-17 Wacker-Chemie GmbH Verfahren zur Herstellung von hochreinem Siliciumgranulat
WO2003087107A2 (de) * 2002-04-17 2003-10-23 Wacker-Chemie Gmbh Verfahren zur herstellung von halosilanen unter mikrowellenenergiebeaufschlagung
WO2003087107A3 (de) * 2002-04-17 2003-12-04 Wacker Chemie Gmbh Verfahren zur herstellung von halosilanen unter mikrowellenenergiebeaufschlagung
US7265235B2 (en) 2002-04-17 2007-09-04 Wacker Chemie Ag Method for producing halosilanes by impinging microwave energy
DE102007041803A1 (de) * 2007-08-30 2009-03-05 Pv Silicon Forschungs Und Produktions Gmbh Verfahren zur Herstellung von polykristallinen Siliziumstäben und polykristalliner Siliziumstab

Also Published As

Publication number Publication date
ITRM960596A0 (it) 1996-08-27
JP2890253B2 (ja) 1999-05-10
CA2185981A1 (en) 1997-03-22
ITRM960596A1 (it) 1998-02-27
JPH09118512A (ja) 1997-05-06
IT1284881B1 (it) 1998-05-22
KR970015462A (ko) 1997-04-28

Similar Documents

Publication Publication Date Title
DE19534922C1 (de) Verfahren zur Herstellung von Trichlorsilan und Silicium
EP0658359B2 (de) Katalytische Hydrodehalogenierung halogenhaltiger Verbindungen von Elementen der vierten Hauptgruppe
DE602005006406T2 (de) Verfahren zur herstellung von hsicl3 durch katalytische hydrodehalogenierung von sicl4
EP2096082B1 (en) Method for manufacturing trichlorosilane
DE19740923B4 (de) Verfahren zur Herstellung von Trichlorsilan
EP0896952A1 (de) Verfahren zur Herstellung von hochreinem Siliciumgranulat
EP1370490B1 (de) Verfahren zur herstellung von chlorsilanen
EP0303973B1 (en) Fluid bed reactor and process
DE2365273A1 (de) Verfahren zur hydrochlorierung von elementarem silicium
EP1318967A1 (de) Verfahren zur herstellung von trichlorsilan
EP0519181A1 (de) Verfahren zur Herstellung von 3-Chlorpropylsilanen
EP2792640A1 (en) Method for producing high-purity chloropolysilane
JP3272689B2 (ja) メチルクロロシランの直接合成法
DE10049963B4 (de) Verfahren zur Herstellung von Trichlorsilan
DE10126558C1 (de) Verfahren zur Herstellung von Silanen
DE10057521B4 (de) Verfahren zur Herstellung von Silanen
DE69104928T2 (de) Silan-Produkte aus der Reaktion von Siliziummonoxid mit Wasserstoffhaliden.
DE3017832C2 (it)
DE69208514T2 (de) Silan-Verbindungen aus der Reaktion von festem Siliziummonoxid mit aromatischen Halogenverbindungen
JPS638207A (ja) 四塩化珪素の水素化方法
DE19816149C1 (de) Verfahren zur Herstellung von Methylchlorsilanen
DE1100006B (de) Verfahren zur Herstellung von Siliciumverbindungen
CN117416982A (zh) 助推铝与氯气快速反应生成三氯化铝的方法及装置
JPH0352408B2 (it)
DE10302792B4 (de) Herstellungsverfahren für Alkyldichlorsilane

Legal Events

Date Code Title Description
8100 Publication of patent without earlier publication of application
D1 Grant (no unexamined application published) patent law 81
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee