CA2185981A1 - Process for preparing trichlorosilane - Google Patents

Process for preparing trichlorosilane

Info

Publication number
CA2185981A1
CA2185981A1 CA002185981A CA2185981A CA2185981A1 CA 2185981 A1 CA2185981 A1 CA 2185981A1 CA 002185981 A CA002185981 A CA 002185981A CA 2185981 A CA2185981 A CA 2185981A CA 2185981 A1 CA2185981 A1 CA 2185981A1
Authority
CA
Canada
Prior art keywords
reactor
gas
trichlorosilane
reaction
silicon particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002185981A
Other languages
English (en)
French (fr)
Inventor
Rudolf Griesshammer
Franz Koppl
Franz Schreieder
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wacker Chemie AG
Original Assignee
Wacker Chemie AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Chemie AG filed Critical Wacker Chemie AG
Publication of CA2185981A1 publication Critical patent/CA2185981A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/08Compounds containing halogen
    • C01B33/107Halogenated silanes
    • C01B33/1071Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/02Silicon
    • C01B33/021Preparation
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/02Silicon
    • C01B33/021Preparation
    • C01B33/027Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/08Compounds containing halogen
    • C01B33/107Halogenated silanes
    • C01B33/1071Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
    • C01B33/10742Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material
    • C01B33/10757Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material with the preferential formation of trichlorosilane
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/08Compounds containing halogen
    • C01B33/107Halogenated silanes
    • C01B33/10778Purification
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Silicon Compounds (AREA)
  • Devices And Processes Conducted In The Presence Of Fluids And Solid Particles (AREA)
CA002185981A 1995-09-21 1996-09-19 Process for preparing trichlorosilane Abandoned CA2185981A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19534922.9 1995-09-21
DE19534922A DE19534922C1 (de) 1995-09-21 1995-09-21 Verfahren zur Herstellung von Trichlorsilan und Silicium

Publications (1)

Publication Number Publication Date
CA2185981A1 true CA2185981A1 (en) 1997-03-22

Family

ID=7772678

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002185981A Abandoned CA2185981A1 (en) 1995-09-21 1996-09-19 Process for preparing trichlorosilane

Country Status (5)

Country Link
JP (1) JP2890253B2 (it)
KR (1) KR970015462A (it)
CA (1) CA2185981A1 (it)
DE (1) DE19534922C1 (it)
IT (1) IT1284881B1 (it)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6007869A (en) * 1997-08-14 1999-12-28 Wacker-Chemie Gmbh Process for preparing highly pure silicon granules
US9321653B2 (en) 2010-02-18 2016-04-26 Tokuyama Corporation Process for producing trichlorosilane

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100333351B1 (ko) * 2000-04-26 2002-04-19 박종섭 데이터 레벨 안정화 회로
JP2005522508A (ja) * 2002-04-17 2005-07-28 ワツカー−ケミー ゲゼルシヤフト ミツト ベシユレンクテル ハフツング マイクロ波エネルギー励起下でのハロシランの製造方法
JP5527520B2 (ja) * 2006-12-01 2014-06-18 プロチミー インターナショナル,エルエルシー アルコキシシランの調製工程
JP4620694B2 (ja) * 2007-01-31 2011-01-26 株式会社大阪チタニウムテクノロジーズ 高純度トリクロロシランの製造方法
DE102007041803A1 (de) * 2007-08-30 2009-03-05 Pv Silicon Forschungs Und Produktions Gmbh Verfahren zur Herstellung von polykristallinen Siliziumstäben und polykristalliner Siliziumstab
JP4714196B2 (ja) * 2007-09-05 2011-06-29 信越化学工業株式会社 トリクロロシランの製造方法および多結晶シリコンの製造方法
KR101117290B1 (ko) * 2009-04-20 2012-03-20 에이디알엠테크놀로지 주식회사 삼염화실란가스 제조용 반응장치
JP6288626B2 (ja) * 2014-08-28 2018-03-07 東亞合成株式会社 トリクロロシランの製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1935895B2 (de) * 1969-07-15 1971-06-03 Deutsche Gold und Silber Scheide anstalt vormals Roessler, 6000 Frankfurt Verfahren zur herstellung von silikochloroform
US4526769A (en) * 1983-07-18 1985-07-02 Motorola, Inc. Trichlorosilane production process

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6007869A (en) * 1997-08-14 1999-12-28 Wacker-Chemie Gmbh Process for preparing highly pure silicon granules
US9321653B2 (en) 2010-02-18 2016-04-26 Tokuyama Corporation Process for producing trichlorosilane

Also Published As

Publication number Publication date
ITRM960596A0 (it) 1996-08-27
DE19534922C1 (de) 1997-02-20
JP2890253B2 (ja) 1999-05-10
ITRM960596A1 (it) 1998-02-27
JPH09118512A (ja) 1997-05-06
IT1284881B1 (it) 1998-05-22
KR970015462A (ko) 1997-04-28

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Legal Events

Date Code Title Description
FZDE Discontinued

Effective date: 20000919

FZDE Discontinued

Effective date: 20000919