KR970015462A - 트리클로로실란의 제조방법 - Google Patents

트리클로로실란의 제조방법 Download PDF

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Publication number
KR970015462A
KR970015462A KR1019960039747A KR19960039747A KR970015462A KR 970015462 A KR970015462 A KR 970015462A KR 1019960039747 A KR1019960039747 A KR 1019960039747A KR 19960039747 A KR19960039747 A KR 19960039747A KR 970015462 A KR970015462 A KR 970015462A
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KR
South Korea
Prior art keywords
reactor
trichlorosilane
gas
silicon particles
fluidized bed
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Application number
KR1019960039747A
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English (en)
Inventor
그라이스하머 루돌프
쾨플 프란즈
쉬라이에데르 프란즈
Original Assignee
에리히 프란케, 칼-하인즈 림벡
와커-헤미 게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 에리히 프란케, 칼-하인즈 림벡, 와커-헤미 게엠베하 filed Critical 에리히 프란케, 칼-하인즈 림벡
Publication of KR970015462A publication Critical patent/KR970015462A/ko

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
    • C01B33/10742—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material
    • C01B33/10757—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material with the preferential formation of trichlorosilane
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C01B33/10778—Purification
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Silicon Compounds (AREA)
  • Devices And Processes Conducted In The Presence Of Fluids And Solid Particles (AREA)

Abstract

이 방법은 유동상 반응기내에서 테트라클로로실란을 환원시켜 트리클로로실란을 제조하는 방법에 관한 것이다.
이 방법은 다음단계로 구성되어 있다.
a) 실리콘입자 유동상을 반응기내에 설정시키고, b) 그 반응기에 고주파 방사를 행하여 실리콘입자를 온도 300∼1100℃로 가열시키며, c) 테트라클로로실란과 수소를 포함하는 반응가스를 그 유동상에 관통시켜 반응가스와 실리콘입자를 반응시킴으로써 트리클로로실란 함유생성가스를 생성시키며, d) 그 생성가스를 반응기에서 제거시킨다.

Description

트리클로로실란의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (4)

  1. 유동상 반응기(fluid-bed reactor)에서 테트라클로로실란을 환원시켜 트리클로로실란을 제조하는 방법에 있어서, a) 실리콘입자의 유동상을 반응기내에 설정시켜, b) 그 반응기에 고주파방사를 행함으로써, 실리콘입자를 온도 300∼1100℃로 가열시키고, c) 테트라클로로실란과 수소를 함유한 반응가스를 그 유동상에 통과시켜 반응가스를 실리콘입자와 반응시킴으로서 트리클로로실란 함유 생성가스를 생성시키고, d) 그 생성가스를 반응기에서 제거시킴을 특징으로 하는 방법.
  2. 제1항에 있어서, 그 반응기에 실리콘입자를 연속적으로 공급시켜 실리콘의 반응에 관련되는 소비를 보충함을 특징으로 하는 방법.
  3. 제1항에 있어서, 그 생성가스는 트리클로로실란과 잔류가스로 분리시켜, 그 잔류가스를 반응가스로서 그 반응기에 재순환시킴을 특징으로 하는 방법.
  4. 제1항에 있어서, 그 생성가스는 트리클로로실란과 잔류가스로 분리시키고, 트리클로로실란은 석출반응기(deposition reactor) (CVD반응기)에서 열분해시켜, 실리콘을 생성시킴을 특징으로 하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960039747A 1995-09-21 1996-09-13 트리클로로실란의 제조방법 KR970015462A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE95-19534922.9 1995-09-21
DE19534922A DE19534922C1 (de) 1995-09-21 1995-09-21 Verfahren zur Herstellung von Trichlorsilan und Silicium

Publications (1)

Publication Number Publication Date
KR970015462A true KR970015462A (ko) 1997-04-28

Family

ID=7772678

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960039747A KR970015462A (ko) 1995-09-21 1996-09-13 트리클로로실란의 제조방법

Country Status (5)

Country Link
JP (1) JP2890253B2 (ko)
KR (1) KR970015462A (ko)
CA (1) CA2185981A1 (ko)
DE (1) DE19534922C1 (ko)
IT (1) IT1284881B1 (ko)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100333351B1 (ko) * 2000-04-26 2002-04-19 박종섭 데이터 레벨 안정화 회로
KR101117290B1 (ko) * 2009-04-20 2012-03-20 에이디알엠테크놀로지 주식회사 삼염화실란가스 제조용 반응장치
KR20130008529A (ko) * 2010-02-18 2013-01-22 가부시끼가이샤 도꾸야마 트리클로로실란의 제조 방법

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19735378A1 (de) * 1997-08-14 1999-02-18 Wacker Chemie Gmbh Verfahren zur Herstellung von hochreinem Siliciumgranulat
US7265235B2 (en) 2002-04-17 2007-09-04 Wacker Chemie Ag Method for producing halosilanes by impinging microwave energy
EP2086985B1 (en) * 2006-12-01 2013-02-27 Prochimie International, LLC Process for preparation of alkoxysilanes
JP4620694B2 (ja) * 2007-01-31 2011-01-26 株式会社大阪チタニウムテクノロジーズ 高純度トリクロロシランの製造方法
DE102007041803A1 (de) * 2007-08-30 2009-03-05 Pv Silicon Forschungs Und Produktions Gmbh Verfahren zur Herstellung von polykristallinen Siliziumstäben und polykristalliner Siliziumstab
JP4714196B2 (ja) 2007-09-05 2011-06-29 信越化学工業株式会社 トリクロロシランの製造方法および多結晶シリコンの製造方法
JP6288626B2 (ja) * 2014-08-28 2018-03-07 東亞合成株式会社 トリクロロシランの製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1935895B2 (de) * 1969-07-15 1971-06-03 Deutsche Gold und Silber Scheide anstalt vormals Roessler, 6000 Frankfurt Verfahren zur herstellung von silikochloroform
US4526769A (en) * 1983-07-18 1985-07-02 Motorola, Inc. Trichlorosilane production process

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100333351B1 (ko) * 2000-04-26 2002-04-19 박종섭 데이터 레벨 안정화 회로
KR101117290B1 (ko) * 2009-04-20 2012-03-20 에이디알엠테크놀로지 주식회사 삼염화실란가스 제조용 반응장치
KR20130008529A (ko) * 2010-02-18 2013-01-22 가부시끼가이샤 도꾸야마 트리클로로실란의 제조 방법

Also Published As

Publication number Publication date
ITRM960596A0 (ko) 1996-08-27
DE19534922C1 (de) 1997-02-20
JP2890253B2 (ja) 1999-05-10
CA2185981A1 (en) 1997-03-22
IT1284881B1 (it) 1998-05-22
ITRM960596A1 (it) 1998-02-27
JPH09118512A (ja) 1997-05-06

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