DE1904503B2 - Verfahren zum herstellen monolithischer halbleiteranordnungen - Google Patents
Verfahren zum herstellen monolithischer halbleiteranordnungenInfo
- Publication number
- DE1904503B2 DE1904503B2 DE19691904503 DE1904503A DE1904503B2 DE 1904503 B2 DE1904503 B2 DE 1904503B2 DE 19691904503 DE19691904503 DE 19691904503 DE 1904503 A DE1904503 A DE 1904503A DE 1904503 B2 DE1904503 B2 DE 1904503B2
- Authority
- DE
- Germany
- Prior art keywords
- zones
- conductivity type
- epitaxial layer
- diffusion
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 238000000034 method Methods 0.000 claims description 31
- 238000009792 diffusion process Methods 0.000 claims description 27
- 238000002955 isolation Methods 0.000 claims description 9
- 230000005669 field effect Effects 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 2
- 239000002019 doping agent Substances 0.000 description 16
- 125000004429 atom Chemical group 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 238000010292 electrical insulation Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 101100400378 Mus musculus Marveld2 gene Proteins 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
- H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/765—Making of isolation regions between components by field effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Bipolar Integrated Circuits (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US70316568A | 1968-02-05 | 1968-02-05 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1904503A1 DE1904503A1 (de) | 1969-11-27 |
| DE1904503B2 true DE1904503B2 (de) | 1971-06-03 |
Family
ID=24824294
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19691904503 Pending DE1904503B2 (de) | 1968-02-05 | 1969-01-30 | Verfahren zum herstellen monolithischer halbleiteranordnungen |
Country Status (7)
| Country | Link |
|---|---|
| BE (1) | BE726353A (id) |
| CH (1) | CH502000A (id) |
| DE (1) | DE1904503B2 (id) |
| ES (1) | ES363184A1 (id) |
| FR (1) | FR1600658A (id) |
| IL (1) | IL31355A (id) |
| NL (1) | NL6901819A (id) |
-
1968
- 1968-12-31 BE BE726353D patent/BE726353A/xx unknown
- 1968-12-31 IL IL31355A patent/IL31355A/xx unknown
- 1968-12-31 FR FR1600658D patent/FR1600658A/fr not_active Expired
-
1969
- 1969-01-23 ES ES363184A patent/ES363184A1/es not_active Expired
- 1969-01-30 DE DE19691904503 patent/DE1904503B2/de active Pending
- 1969-02-04 CH CH168269A patent/CH502000A/de not_active IP Right Cessation
- 1969-02-05 NL NL6901819A patent/NL6901819A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| IL31355A0 (en) | 1969-02-27 |
| BE726353A (id) | 1969-05-29 |
| NL6901819A (id) | 1969-08-07 |
| FR1600658A (id) | 1970-07-27 |
| IL31355A (en) | 1971-11-29 |
| DE1904503A1 (de) | 1969-11-27 |
| CH502000A (de) | 1971-01-15 |
| ES363184A1 (es) | 1970-11-16 |
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