DE1904503B2 - Verfahren zum herstellen monolithischer halbleiteranordnungen - Google Patents
Verfahren zum herstellen monolithischer halbleiteranordnungenInfo
- Publication number
- DE1904503B2 DE1904503B2 DE19691904503 DE1904503A DE1904503B2 DE 1904503 B2 DE1904503 B2 DE 1904503B2 DE 19691904503 DE19691904503 DE 19691904503 DE 1904503 A DE1904503 A DE 1904503A DE 1904503 B2 DE1904503 B2 DE 1904503B2
- Authority
- DE
- Germany
- Prior art keywords
- zones
- conductivity type
- epitaxial layer
- diffusion
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 238000000034 method Methods 0.000 claims description 31
- 238000009792 diffusion process Methods 0.000 claims description 27
- 238000002955 isolation Methods 0.000 claims description 9
- 230000005669 field effect Effects 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 2
- 239000002019 doping agent Substances 0.000 description 16
- 125000004429 atom Chemical group 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 238000010292 electrical insulation Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 101100400378 Mus musculus Marveld2 gene Proteins 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
- H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/765—Making of isolation regions between components by field effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US70316568A | 1968-02-05 | 1968-02-05 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1904503A1 DE1904503A1 (de) | 1969-11-27 |
| DE1904503B2 true DE1904503B2 (de) | 1971-06-03 |
Family
ID=24824294
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19691904503 Pending DE1904503B2 (de) | 1968-02-05 | 1969-01-30 | Verfahren zum herstellen monolithischer halbleiteranordnungen |
Country Status (7)
| Country | Link |
|---|---|
| BE (1) | BE726353A (en, 2012) |
| CH (1) | CH502000A (en, 2012) |
| DE (1) | DE1904503B2 (en, 2012) |
| ES (1) | ES363184A1 (en, 2012) |
| FR (1) | FR1600658A (en, 2012) |
| IL (1) | IL31355A (en, 2012) |
| NL (1) | NL6901819A (en, 2012) |
-
1968
- 1968-12-31 FR FR1600658D patent/FR1600658A/fr not_active Expired
- 1968-12-31 BE BE726353D patent/BE726353A/xx unknown
- 1968-12-31 IL IL31355A patent/IL31355A/xx unknown
-
1969
- 1969-01-23 ES ES363184A patent/ES363184A1/es not_active Expired
- 1969-01-30 DE DE19691904503 patent/DE1904503B2/de active Pending
- 1969-02-04 CH CH168269A patent/CH502000A/de not_active IP Right Cessation
- 1969-02-05 NL NL6901819A patent/NL6901819A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| BE726353A (en, 2012) | 1969-05-29 |
| ES363184A1 (es) | 1970-11-16 |
| IL31355A0 (en) | 1969-02-27 |
| DE1904503A1 (de) | 1969-11-27 |
| NL6901819A (en, 2012) | 1969-08-07 |
| CH502000A (de) | 1971-01-15 |
| FR1600658A (en, 2012) | 1970-07-27 |
| IL31355A (en) | 1971-11-29 |
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