DE1521953B2 - Verfahren zur herstellung eines oxidbelages auf einem vorzugsweise einkristallinen koerper aus halbleitermaterial - Google Patents

Verfahren zur herstellung eines oxidbelages auf einem vorzugsweise einkristallinen koerper aus halbleitermaterial

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Publication number
DE1521953B2
DE1521953B2 DE19621521953 DE1521953A DE1521953B2 DE 1521953 B2 DE1521953 B2 DE 1521953B2 DE 19621521953 DE19621521953 DE 19621521953 DE 1521953 A DE1521953 A DE 1521953A DE 1521953 B2 DE1521953 B2 DE 1521953B2
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Prior art keywords
semiconductor material
oxide coating
treated
steam
production
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Granted
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DE19621521953
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DE1521953C (de
DE1521953A1 (de
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Norbert Dr phil nat 8520 Erlangen Schink
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Siemens AG
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Siemens AG
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Publication of DE1521953A1 publication Critical patent/DE1521953A1/de
Publication of DE1521953B2 publication Critical patent/DE1521953B2/de
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    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
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    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
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Description

Das Hauptpatent 1 521 950 betrifft ein Verfahren zum Herstellen eines Oxidbelages auf einem vorzugsweise einkristallinen Körper aus Halbleitermaterial, -insbesondere-aus-Silicium, bei erhöhter Temperatur und unter Verwendung von Wasserdampf, wobei der Körper rnit Wasserdampf behandelt wird, dem einer der Wasserstoffionen und/oder Alkaliioneri abspaltenden und sich mindestens teilweise verflüchtigenden Stoffe Natriumacetat, Orthophosphorsäure, Schwefelsäure, Dinatriumhydrogenphosphat, Kochsalz, Natriumjodid und Natriumarsenid beigemengt ist. Die Erfindung betrifft eine Verbesserung dieses Verfahrens und ist dadurch gekennzeichnet, daß der Körper mit einem mit den Beimengungen versehenen Dampf aus einer wäßrigen Wasserstoffperoxidlösung behandelt wird. Dabei wird insbesondere eine Wasserstoffsuperoxidlösung mit einer Konzentration von 30% verwendet.
Es hat sich als zweckmäßig erwiesen, auf die Oberfläche eines Halbleiterkörpers einen Oxidbelag aufzubringen, der nach Fertigstellung eines Halbleiterbauelementes weitgehend das Eindringen von Fremdstoffen verhindern kann. Oxidbeläge können aber auch zur Maskierung bei der Herstellung von Halbleiteranordnungen durch Diffusion dienen. Weiter können Oxidhäute mit eingelagerten Dotierungsstoffen auf Halbleiterkörper aufgebracht und anschließend durch eine/Wärmebehandlung ,die Dotierungsstoffe in das
ίο Halbleiteririkteri'al eüdiffundiert werden.
Das Verfahren gemäß dem Hauptpatent dient zur Herstellung von Oxidhäuten zu diesen Zwecken. Es tat sich gezeigt, daß die nach diesem Verfahren hergestellten Oxidhäute wisch- und chlorfest sind. Der Hauptvorteil des Verfahrens ist darin zu sehen, daß verhältnismäßig niedrige Temperaturen angewendet werden, z. B. Temperaturen, die unterhalb des Schmelzpunktes des Gold-Germanium-bzw. des GoId-Silicium-Eutektikums liegen (360 bzw. 370° C). Bei der Erzeugung von Oxidschichten mit Hilfe von Wasserdampf ohne Verwendung eines Wasserstoffionen oder Alkaliionen abspaltenden Stoffes liegt die untere Grenze der Entstehung von Oxiden im Falle von Silicium bei etwa 600° C.
Das Verfahren gemäß der Erfindung wird in der gleichen Weise wie das Verfahren gemäß dem Hauptpatent durchgeführt. Es wird lediglich Wasserstoffsuperoxid an Stelle von Wasser verwendet. Es zeigte sich, daß bei gleicher Temperatur, Menge und Zeit mindestens doppelt so große Schichtdicken der entstehenden Oxidhäute wie bei dem Verfahren gemäß dem
Hauptpatent erzielt werdenJcönnen. . ..
Man kann beispielsweise in einer Ampulle, die aus Quarz oder Glas bestehen kann, eine Reihe von scheibenförmigen Halbleiterkörpern anordnen, sowie in einer gewissen Entfernung davon, z. B. in einer Abschnürung der Ampulle, 100 mg Wasserstoffsuperoxid und 20 mg Kochsalz. Danach wird die Ampulle abgeschmolzen und beispielsweise in einem Ofen erwärmt. Zweckmäßig wird die: Ampulle auf eine Temperatur von mehr als 250° C, insbesondere 350° C ge-. bracht und mindestens 30 Minuten auf dieser Temperatur mit dem Dampf behandelt. Beispielsweise kann eine Wärmebehandlung von 300° C und von 16 Stunden Dauer vorgenommen werden. Nach der Wärmebehandlung besitzen die Halbleiterkörper eine Oxidhaut von einigen 1000 A Dicke.

Claims (3)

Patentansprüche:
1. Verfahren zum Herstellen eines Oxidbelages auf einem vorzugsweise einkristallinen Körper aus Halbleitermaterial, insbesondere Silicium, bei erhöhter Temperatur und unter Verwendung von Wasserdampf, wobei gemäß Patent 1 521 950 der Körper mit Wasserdampf behandelt wird, dem einer der Wasserstoffionen und/oder Alkaliionen abspaltenden und sich mindestens teilweise verflüchtigen Stoffe Natriumacetat, Orthophosphorsäure, Schwefelsäure, Dinatriumhydrogenphosphat, Kochsalz, Natriumjodid und Natriumarsenit beigemengt ist, dadurch gekennzeichnet, daß der Körper mit einem mit den Beimengungen versehenen Dampf aus einer wäßrigen Wasserstoffperoxidlösung behandelt wird.
2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß der Dampf aus einer Wasserstoffsuperoxidlösung einer Konzentration von 30 °/o hergestellt wird.
3. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß der Körper bei einer Temperatur von mehr als 250° C, insbesondere von etwa 350° C, mit dem Dampf behandelt wird.
DE19621521953 1962-05-10 1962-05-10 Verfahren zur Herstellung eines Oxidbelages auf einem vorzugsweise einkristallinen Körper aus Halbleitermaterial Expired DE1521953C (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DES0076751 1961-11-18
DES0079385 1962-05-10
DES0079384 1962-05-10
DES0079385 1962-05-10

Publications (3)

Publication Number Publication Date
DE1521953A1 DE1521953A1 (de) 1970-07-09
DE1521953B2 true DE1521953B2 (de) 1972-08-17
DE1521953C DE1521953C (de) 1973-03-22

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NL289736A (de)
NL285088A (de)
GB1001620A (en) 1965-08-18
DE1521950B2 (de) 1971-07-29
GB1014286A (en) 1965-12-22
DE1521952B2 (de) 1972-06-08
US3260626A (en) 1966-07-12
CH471239A (de) 1969-04-15
CH406779A (de) 1966-01-31
NL287407A (de)
DE1521950A1 (de) 1970-03-12
DE1521952A1 (de) 1969-07-31
CH471240A (de) 1969-04-15
SE324184B (de) 1970-05-25
DE1521953A1 (de) 1970-07-09
SE323451B (de) 1970-05-04
GB1014287A (en) 1965-12-22

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