DE1521953A1 - Verfahren zur Herstellung eines Oxydbelages auf einem vorzugsweise einkristallinen Koerper aus Halbleitermaterial - Google Patents

Verfahren zur Herstellung eines Oxydbelages auf einem vorzugsweise einkristallinen Koerper aus Halbleitermaterial

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Publication number
DE1521953A1
DE1521953A1 DE19621521953 DE1521953A DE1521953A1 DE 1521953 A1 DE1521953 A1 DE 1521953A1 DE 19621521953 DE19621521953 DE 19621521953 DE 1521953 A DE1521953 A DE 1521953A DE 1521953 A1 DE1521953 A1 DE 1521953A1
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Prior art keywords
semiconductor material
oxide coating
body made
production
pla
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DE19621521953
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English (en)
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DE1521953C (de
DE1521953B2 (de
Inventor
Nat Norbert Schink Dr Phil
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Siemens AG
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Siemens AG
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Publication of DE1521953B2 publication Critical patent/DE1521953B2/de
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    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
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    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
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Description

Verfahren zur Herstellung eines Oxydbelages auf einem vorzugsweise einkristallinen Körper aus Halbleitermaterial
Zusatz zu Patent (Anm. P 15 21 950.8 - PLA 61/1786)
Das Hauptpatent (Anm. P 15 21 950.8 - PLA 61/1786)
betrifft ein Verfahren zur Herstellung eines Oxydbelages auf einem vorzugsweise einkristallinen Körper aus Halbleitermaterial, insbesondere aus Silizium, unter Verwendung von Wasserdampf, wobei dem Wasserdampf ein bei erhöhter Temperatur Wasserstoffionen und/oder Alkaliionen abspaltender und sich mindestens teilweise verflüchtigender Stoff beigemengt wird. Die Erfindung betrifft eine Verbesserung dieses Verfahrens und ist dadurch gekennzeichnet, daß anstelle von Wasser Wasser-
Wl/Fö
009828/1 647
bad original
PLA 62/1289
stoffsuperoxyd verwendet wird, insbesondere Wasserstoffsuperoxyd mit einer hohen. Konzentration von z.B. 30 $.
Es hat sich als zweckmäßig erwieeen, auf die Oberfläche eines Halbleiterkörpers einen Oxydbelag aufzubringen, der nach Fertigstellung eines Halbleiterbauelementes weitgehend das Eindringen von Fremdstoffen verhindern kann. Oxydbeläge können auch zur Maskierung bei der Herstellung von Halbleiteranordnungen durch Diffusion dienen. Weiter können Oxydhäute mit eingelagerten Dotieiungsstoffen auf Halbleiterkörper aufgebracht und anschliessend durch eine Wärmebehandlung die Dotierungs3toffe in das Halbleitermaterial eindiffundiert werden.
Das Verfahren gemäß dem Hauptpatent dient zur Herstellung von Oxydhäuten zu diesen Zwecken. Es hat sich gezeigt, daß die nach diesem Verfahren hergestellten Oxydhäute wisch- und chlorfest sind. Der Hauptvorteil des Verfahrens ist darin zu sehen, daß verhältnismäßig niedrige Temperaturen angewendet werden, z.B. Temperaturen die unterhalb des Schmelzpunktes des Gold-Germanium- bzw« des GoId-Silizium-Eutektikums liegen (360 bzw. 370 0C). Bei der Erzeugung von Oxydschichten mit Hilfe von Wasserdampf ohne Verwendung, eines Wasserstoffionen oder Alkaliionen abspaltenden Stoffes liegt die untere Grenze der Entstehung von Oxyden im Falle von Silizium bei etwa 600 0C.
Das Verfahren gemäß der Erfindung wird in der gleichen Weise wie dao Verfahren gemäß dem Hauptpatent durchgeführt. Es wird lediglich Wasserstoffsuperoxyd anstelle von Wasser verwendet. Es
009828/1647 ^
BAD ORiGlNAL - 2 - Si/Küp
PLA 62/1289
zeigte sich, daß bei gleicher Temperatur, Kenge und Zeit mindestens doppelt so große Schichtdicken der entstehenden Oxydhäute wie bei dem Verfahren gemäß dem Häuptpatent erzielt werden können. Offenbar ist dies darauf zurückzuführen, dai3 im Falle der Verwendung von Wasserstoffsuperoxyd Sauerstoff in einer besonders reaktionsfreudigen Form vorhanden ist.
Man kann beispielsweise in einer Ampulle, die aus Quarz oder
Glas bestehen kann, eine Reihe von scheibenförmigen Halbleiterkörpern anordnen, sowie in einer gewissen Entfernung davon, z.3. in einer Abschnürung der Ampulle, 100 mg Wasserstoffsuperoxyd und 20 mg Kochsalz. Danach wird die Ampulle abgeschmolzen und beispielsweise in einem Ofen erwärmt. Zweckmäßig wird die Ampulle auf eine Temperatur von mehr als 2500C, insbesondere 35OT, gebracht und mindestens 30 Minuten auf dieser Temperatur belassen. Beispielsweise kann eine Wärmebehandlung von' 3.0CW und von 16 Std. Dauer vorgenommen werden. Nach der Wärmebehandlung besitzen die Halbleiterkörper eine Oxydhaut von einigen 1000 & Dicke.
Als Wasserstoffionen und bzw. oder Alkaliionen abspaltende Stoffe haben sich insbesondere Natriumacetat CH-COONa . 3H?0, Orthophosphorsäure H-PO^, Schwefelsäure H2SO., Dinatriumhydrogenphosphat Na HPO4 . 12H2O, Kochsalz NaCl, Natriumiodid NaJ und Natriumarsenit Ua-AsO- als geeignet erwiesen."
3 Patentansprüche
00982 8/16^7 ... .
- 3 - BAD ORIGINAL Si/Küp

Claims (1)

  1. PLA 62/1289
    Patentansprüche
    1. Vorfahren sur Herstellung eines Oxydbelages auf einem vorzugsweise einkristallinen Körper aus-Halbleitermaterial, insbesondere aus 'oilizium, unter Verwendung von Wasserdampf,
    P 15 21 950.8 wobei gem:iß Patent ... ... (Anmeldung SxffcsxSixXiii*?&±£, PLA 61/I7bb) dein Wasserdampf ein bei erhöhter Temperatur Wasstrstoffionen und/oder Alkaliionen abspaltender und sich mindestens teilweise verflüchtigender Stoff beigemengt wird, dadurch gekennzeichnet, daß anstelle von Wasser Wasserstoffsuparoxyd verwendet wird.
    P. /erfahren nach Anspruch 1f dadurch gekennzeichnet, daß ■.VasserQtoff3uperox.yd in einer Konzentration von 30 fo verwendet wird.
    3. Verfahren nach Anepruch 1, dadurch gekennzeichnet! daß es bei einer !Temperatur von mehr als 2500C, "insbesondere von etwa 35OH;, durchgeführt wird.
    Urne Unterlagen nut?st. ...-.. ... >;, ..:.r...al«..« - ι■< 009828/16A7
    - 4 - - ' %/Küp
    BAD ORIGINAL
DE19621521953 1962-05-10 1962-05-10 Verfahren zur Herstellung eines Oxidbelages auf einem vorzugsweise einkristallinen Körper aus Halbleitermaterial Expired DE1521953C (de)

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Application Number Priority Date Filing Date Title
DES0076751 1961-11-18
DES0079385 1962-05-10
DES0079384 1962-05-10
DES0079385 1962-05-10

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DE1521953B2 DE1521953B2 (de) 1972-08-17
DE1521953C DE1521953C (de) 1973-03-22

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US3260626A (en) 1966-07-12
DE1521952A1 (de) 1969-07-31
GB1001620A (en) 1965-08-18
NL289736A (de)
GB1014287A (en) 1965-12-22
DE1521953B2 (de) 1972-08-17
CH471240A (de) 1969-04-15
CH471239A (de) 1969-04-15
NL287407A (de)
SE324184B (de) 1970-05-25
DE1521950B2 (de) 1971-07-29
DE1521950A1 (de) 1970-03-12
NL285088A (de)
DE1521952B2 (de) 1972-06-08
CH406779A (de) 1966-01-31
SE323451B (de) 1970-05-04
GB1014286A (en) 1965-12-22

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