DE1288174B - Metallischer UEberzug auf einer isolierenden Unterlage - Google Patents

Metallischer UEberzug auf einer isolierenden Unterlage

Info

Publication number
DE1288174B
DE1288174B DEI23747A DEI0023747A DE1288174B DE 1288174 B DE1288174 B DE 1288174B DE I23747 A DEI23747 A DE I23747A DE I0023747 A DEI0023747 A DE I0023747A DE 1288174 B DE1288174 B DE 1288174B
Authority
DE
Germany
Prior art keywords
layer
metal
coating
base
evaporation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEI23747A
Other languages
German (de)
English (en)
Inventor
Ayling Stanley Gerald
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
Original Assignee
Deutsche ITT Industries GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB20201/62A external-priority patent/GB1010111A/en
Priority claimed from GB36013/62A external-priority patent/GB1044689A/en
Priority claimed from DEST19973A external-priority patent/DE1179280B/de
Application filed by Deutsche ITT Industries GmbH filed Critical Deutsche ITT Industries GmbH
Publication of DE1288174B publication Critical patent/DE1288174B/de
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/40—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal all coatings being metal coatings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/027—Graded interfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
    • H01R4/02—Soldered or welded connections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
    • H10P95/00—
    • H10W20/40—
    • H10W72/20—
    • H10W72/30—
    • H10W74/012—
    • H10W74/114—
    • H10W74/15—
    • H10W76/161—
    • H10W90/00—
    • H10W72/07236—
    • H10W72/073—
    • H10W72/07337—
    • H10W72/07554—
    • H10W72/5363—
    • H10W72/552—
    • H10W72/59—
    • H10W72/856—
    • H10W72/944—
    • H10W72/952—
    • H10W74/00—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Physical Vapour Deposition (AREA)
  • Combinations Of Printed Boards (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
DEI23747A 1962-05-25 1963-05-21 Metallischer UEberzug auf einer isolierenden Unterlage Pending DE1288174B (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
GB20201/62A GB1010111A (en) 1962-05-25 1962-05-25 Vapour deposition of metallic films
GB36013/62A GB1044689A (en) 1962-09-21 1962-09-21 Improvements in or relating to mountings for semi-conductor devices
GB39650/62A GB1023531A (en) 1962-05-25 1962-10-19 Improvements in or relating to semiconductor devices
DEST19973A DE1179280B (de) 1962-11-09 1962-11-09 Verfahren zur Herstellung von loetfaehigen Kontaktstellen
GB48863/62A GB1024216A (en) 1962-05-25 1962-12-28 Improvements in or relating to circuit modules including semiconductor devices

Publications (1)

Publication Number Publication Date
DE1288174B true DE1288174B (de) 1969-01-30

Family

ID=27512244

Family Applications (2)

Application Number Title Priority Date Filing Date
DEI23747A Pending DE1288174B (de) 1962-05-25 1963-05-21 Metallischer UEberzug auf einer isolierenden Unterlage
DE1963J0024586 Expired DE1302005C2 (de) 1962-05-25 1963-10-18 Verwendung eines metallischen ueberzugs als grossflaechiger anschluss fuer plenare halbleiterbauelemente

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE1963J0024586 Expired DE1302005C2 (de) 1962-05-25 1963-10-18 Verwendung eines metallischen ueberzugs als grossflaechiger anschluss fuer plenare halbleiterbauelemente

Country Status (7)

Country Link
US (1) US3270256A (cg-RX-API-DMAC10.html)
BE (3) BE637621A (cg-RX-API-DMAC10.html)
CH (3) CH422927A (cg-RX-API-DMAC10.html)
DE (2) DE1288174B (cg-RX-API-DMAC10.html)
GB (2) GB1023531A (cg-RX-API-DMAC10.html)
NL (3) NL299522A (cg-RX-API-DMAC10.html)
SE (1) SE316221B (cg-RX-API-DMAC10.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2807350A1 (de) * 1977-03-02 1978-08-24 Sharp Kk Fluessigkristall-anzeigevorrichtung in baueinheit mit einem integrierten schaltkreis
DE2810523A1 (de) * 1977-03-18 1978-09-21 Nippon Mining Co Leiterplatten fuer gedruckte schaltkreise und verfahren zu ihrer herstellung

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3266127A (en) * 1964-01-27 1966-08-16 Ibm Method of forming contacts on semiconductors
US3323956A (en) * 1964-03-16 1967-06-06 Hughes Aircraft Co Method of manufacturing semiconductor devices
US3325702A (en) * 1964-04-21 1967-06-13 Texas Instruments Inc High temperature electrical contacts for silicon devices
GB1052135A (cg-RX-API-DMAC10.html) * 1964-11-09
US3477123A (en) * 1965-12-21 1969-11-11 Ibm Masking technique for area reduction of planar transistors
DE1283970B (de) * 1966-03-19 1968-11-28 Siemens Ag Metallischer Kontakt an einem Halbleiterbauelement
US3504430A (en) * 1966-06-27 1970-04-07 Hitachi Ltd Method of making semiconductor devices having insulating films
US3840982A (en) * 1966-12-28 1974-10-15 Westinghouse Electric Corp Contacts for semiconductor devices, particularly integrated circuits, and methods of making the same
US3480841A (en) * 1967-01-13 1969-11-25 Ibm Solderable backside ohmic contact metal system for semiconductor devices and fabrication process therefor
US3460003A (en) * 1967-01-30 1969-08-05 Corning Glass Works Metallized semiconductor device with fired-on glaze consisting of 25-35% pbo,10-15% b2o3,5-10% al2o3,and the balance sio2
GB1258580A (cg-RX-API-DMAC10.html) * 1967-12-28 1971-12-30
DE1789062C3 (de) * 1968-09-30 1978-11-30 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von Metallkontaktschichten für Halbleiteranordnungen
US3704166A (en) * 1969-06-30 1972-11-28 Ibm Method for improving adhesion between conductive layers and dielectrics
FR2048036B1 (cg-RX-API-DMAC10.html) * 1969-06-30 1974-10-31 Ibm
FR2547112B1 (fr) * 1983-06-03 1986-11-21 Thomson Csf Procede de realisation d'un circuit hybride et circuit hybride logique ou analogique
FR2986372B1 (fr) * 2012-01-31 2014-02-28 Commissariat Energie Atomique Procede d'assemblage d'un element a puce micro-electronique sur un element filaire, installation permettant de realiser l'assemblage
KR102073790B1 (ko) * 2013-12-09 2020-02-05 삼성전자주식회사 투과형 광 셔터 및 상기 투과형 광 셔터의 제조 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE656875C (de) * 1934-10-16 1938-02-16 Dispersion Cathodique S A Verfahren zur Herstellung festhaftender Metallschichten mittels Kathodenzerstaeubung
DE1006692B (de) * 1953-10-29 1957-04-18 Siemens Ag Verfahren zur Herstellung festhaftender Metallbelegungen auf Unterlagen aller Art
GB874965A (en) * 1958-07-09 1961-08-16 G V Planer Ltd Improvements in or relating to electrical circuits or circuit elements

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2973466A (en) * 1959-09-09 1961-02-28 Bell Telephone Labor Inc Semiconductor contact
US3199002A (en) * 1961-04-17 1965-08-03 Fairchild Camera Instr Co Solid-state circuit with crossing leads and method for making the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE656875C (de) * 1934-10-16 1938-02-16 Dispersion Cathodique S A Verfahren zur Herstellung festhaftender Metallschichten mittels Kathodenzerstaeubung
DE1006692B (de) * 1953-10-29 1957-04-18 Siemens Ag Verfahren zur Herstellung festhaftender Metallbelegungen auf Unterlagen aller Art
GB874965A (en) * 1958-07-09 1961-08-16 G V Planer Ltd Improvements in or relating to electrical circuits or circuit elements

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2807350A1 (de) * 1977-03-02 1978-08-24 Sharp Kk Fluessigkristall-anzeigevorrichtung in baueinheit mit einem integrierten schaltkreis
DE2810523A1 (de) * 1977-03-18 1978-09-21 Nippon Mining Co Leiterplatten fuer gedruckte schaltkreise und verfahren zu ihrer herstellung

Also Published As

Publication number Publication date
GB1024216A (en) 1966-03-30
CH468719A (de) 1969-02-15
CH424889A (de) 1966-11-30
GB1023531A (en) 1966-03-23
DE1302005C2 (de) 1975-08-07
BE637621A (cg-RX-API-DMAC10.html) 1900-01-01
BE639640A (cg-RX-API-DMAC10.html) 1900-01-01
DE1302005B (cg-RX-API-DMAC10.html) 1975-08-07
BE632739A (cg-RX-API-DMAC10.html) 1900-01-01
CH422927A (de) 1966-10-31
NL292995A (cg-RX-API-DMAC10.html) 1900-01-01
SE316221B (cg-RX-API-DMAC10.html) 1969-10-20
NL298258A (cg-RX-API-DMAC10.html) 1900-01-01
NL299522A (cg-RX-API-DMAC10.html) 1900-01-01
US3270256A (en) 1966-08-30

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