CH424889A - Verfahren zur Herstellung von lötfähigen Kontaktstellen - Google Patents

Verfahren zur Herstellung von lötfähigen Kontaktstellen

Info

Publication number
CH424889A
CH424889A CH1357663A CH1357663A CH424889A CH 424889 A CH424889 A CH 424889A CH 1357663 A CH1357663 A CH 1357663A CH 1357663 A CH1357663 A CH 1357663A CH 424889 A CH424889 A CH 424889A
Authority
CH
Switzerland
Prior art keywords
layer
solderable
tantalum
metal
poorly
Prior art date
Application number
CH1357663A
Other languages
English (en)
Inventor
Eugen Dr Lauckner Hans
Original Assignee
Standard Telephon & Radio Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB20201/62A external-priority patent/GB1010111A/en
Priority claimed from GB36013/62A external-priority patent/GB1044689A/en
Priority claimed from DEST19973A external-priority patent/DE1179280B/de
Application filed by Standard Telephon & Radio Ag filed Critical Standard Telephon & Radio Ag
Publication of CH424889A publication Critical patent/CH424889A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/40—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal all coatings being metal coatings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C23C14/027—Graded interfaces
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Description


      Verfahren        zur    Herstellung von     lötfähigen    Kontaktstellen    Die Erfindung bezieht sich auf ein Verfahren zur  Herstellung von lötfähigen Kontaktstellen an dünnen  Schichten aus schlecht oder nicht lötfähigen Metallen,  die auf einen isolierenden Träger aufgebracht sind.  



  In der Elektrotechnik gibt es viele Fälle, bei denen  Schichten aus schlecht oder nicht lötfähigen Metallen,  die auf einen     isolierenden    Träger aufgebracht wurden,  mit elektrischen Anschlüssen versehen werden müs  sen. So werden beispielsweise Widerstände in Form  von dünnen Schichten durch Aufdampfen auf eine  isolierende Trägerunterlage hergestellt und müssen an  ihren Enden mit geeigneten Kontakten versehen wer  den. Am einfachsten sind elektrische Kontakte durch  Anlöten anzubringen. Es ist jedoch bei Schichten aus  schlecht lötfähigen oder nicht lötfähigen Metallen  schwierig, wenn nicht gar unmöglich, durch Löten ge  eignete Kontakte anzubringen. Andere     Kontaktie-          rungsverfahren,    wie z. B.

   Schweissen, stossen inso  fern auf Schwierigkeiten, weil hierbei die dünnen  Schichten leicht beschädigt oder zerstört werden.  



  In neuerer Zeit sind sogenannte integrierte Schal  tungen oder Dünnfilmschaltungen bekanntgeworden,  bei denen die passiven elektrischen Bauelemente wie  Widerstände und Kondensatoren nach Art einer ge  druckten Schaltung gleichzeitig mit den Leitungszü  gen für die Verbindungen hergestellt werden. Als Ma  terial für solche Dünnfilmschaltungen wird mit Vor  teil Tantal verwendet, aus dem sich leicht Wider  stände und Kondensatoren herstellen lassen. Die Tan  talschicht wird hierbei beispielsweise durch Katho  denzerstäubung auf eine geeignete isolierende Unter  lage, wie z. B. Glas, aufgebracht und nach einem  Photoätzverfahren wird ein Teil der Tantalschicht so  weggeätzt, dass die Leitungszüge, Widerstände und  Kondensatoren in Form von dünnen Streifen zu  rückbleiben.

   Die aktiven Bauelemente können nicht    aus der Tantalschicht erzeugt werden und müssen  nachträglich in die Schaltung eingelötet werden. Zum  Anschluss einer solchen Dünnfilmschaltung und zum  Anbringen der aktiven Bauelemente wie Dioden und  Transistoren sind bei solchen Schaltungen     Anschluss-          stellen    vorgesehen, an welche die entsprechenden  elektrischen Leitungen angelötet werden. Da sich  Tantal nur schwer oder nicht löten lässt, werden die  Leitungszüge der Schaltung mit einer dünnen Gold  schicht bedampft, welche     zusätzlich    die Aufgabe hat,  den elektrischen Widerstand der Zuleitungen herab  zusetzen.

   Es ist nun zwar möglich, an die auf der  Tantalschicht angeordnete Goldschicht Kontakte an  zulöten, jedoch ist dies sehr schwierig und die Kon  takte lösen sich leicht ab. Die dünne Goldschicht löst  sich nämlich beim Aufbringen von Lot in diesem auf,  so dass das Lot auf die darunter befindliche     Tantal-          schicht    zu liegen kommt, auf der es nicht haftet.  Wenn es schon gelingt, an der dünnen Goldschicht  einen Leitungsdraht     anzulöten,    so ist die mechanische  Festigkeit nur sehr gering, da der     Lottropfen    sich  leicht mit der darunter befindlichen Goldschicht vom       Tantal    ablöst.  



  Aufgabe der vorliegenden Erfindung ist es, diese  Nachteile zu vermeiden und ein Verfahren zur Her  stellung von lötfähigen Kontaktstellen an dünnen  Schichten aus schlecht oder     nicht    lötfähigen Metal  len auf einem isolierenden Träger anzugeben, das  eine gut leitende und mechanisch feste Verbindung  von elektrischen Anschlüssen durch Anlöten ermög  licht.  



  Gemäss der Erfindung wird vor dem Aufbringen  der schlecht oder nicht lötfähigen Metallschicht, z. B.  der     Tantalschicht,    auf den Träger eine Metallschicht  aus gut lötfähigem Metall aufgebracht und nach dem  Aufbringen der Schicht des schlecht oder nicht löt-           fähigen    Metalls ein Teil dieser Schicht mit     Hilfe    eines       Ätzmittels,    welches das gut lötfähige Metall nicht löst,  wieder entfernt, so dass dabei die darunterliegende  Schicht aus gut     lötfähigem    Metall freigelegt wird.  



  Die Schicht aus gut lötfähigem Metall wird  zweckmässig auf den Isolierstoffträger, gegebenen  falls unter Verwendung einer Schablone, durch Auf  streichen, Aufspritzen oder Aufdrucken aufgebracht  und danach in den Träger     eingebrannt.    Zur Herstel  lung der Kontaktstellen gemäss der Erfindung eignet  sich insbesondere das sog. Einbrennsilber, das als  Paste auf die isolierende Unterlage aufgebracht wird.  Durch Erhitzung bildet sich eine fest mit dieser Un  terlage verbundene     Silberschicht.     



  Man     kann    dabei folgendermassen verfahren: Es  werden also zunächst an den     Kontaktstellen    oder  auch zusätzlich noch an den Stellen, wo die Leitungs  züge verlaufen, die entsprechenden Flächen der Iso  lierstoffunterlage mit Einbrennsilber bestrichen und  dieses in die Unterlage     eingebrannt.    Danach erst  wird die Schicht aus schlecht lötfähigem Metall, wie  z. B. Tantal, aufgebracht, beispielsweise durch Ka  thodenzerstäubung. Nun wird in üblicher Weise nach  einem Photoätzverfahren das überschüssige Tantal       entfernt,    so dass nur die     Leitungszüge    und die pas  siven Bauelemente in Form von dünnen Tantalstrei  fen zurückbleiben.

   Gleichzeitig wird hierbei an den  Kontaktstellen die Tantalschicht teilweise entfernt,  so dass die darunterliegende Silberschicht zu Tage       tritt.    Nach Fertigstellung der Schaltung können in  einfacher Weise an diesen Stellen die elektrischen  Zuleitungen angelötet werden, da sich Silber sehr gut  löten lässt und in gutem elektrischem     Kontakt        mit    der  aufgestäubten Tantalschicht steht. Da die Silber  schicht in die     Trägerunterlage        eingebrannt    wurde,  sind die so erhaltenen Kontakte auch mechanisch  sehr     stabil.     



  Es ist weiter möglich, in an sich bekannter Weise  auf die Schicht aus schlecht lötfähigem Metall, bei  spielsweise auf das Tantal, eine Schicht aus einem  gut leitenden Metall, wie z. B. Gold, aufzubringen.  An den Kontaktstellen     liegt    die Goldschicht dann  direkt auf der Silberschicht. Beim     Anlöten    an diesen  Stellen treten jedoch nicht die zuvor beobachteten  Nachteile ein, da die Lötverbindung bis zur Silber  schicht hindurchreicht.  



  Auf diese Weise ist die Herstellung von     lötfähi-          gen    Kontaktstellen bei Dünnfilmschaltungen aus Tau  tal möglich, es können aber auch sonst lötfähige Kon  taktstellen hergestellt werden, wo Schichten aus  schlecht oder nicht lötfähigem Metall auf einem iso-    lierenden Träger mit einem elektrischen Anschluss  versehen werden müssen.  



  Beim Ätzen von Tantal wird üblicherweise eine  Mischung von konzentrierter Flusssäure und Salpe  tersäure verwendet, welche das Silber jedoch nicht  auflöst, da sich eine dünne Schicht aus Silberfluorid  auf dem Silber bildet. Diese Schutzschicht aus     Silber-          fluorid    löst sich beim Spülen mit Wasser nach dem  Ätzen, so dass das Löten dadurch nicht behindert  wird. Anstelle des Silbers kann auch ein anderes ge  eignetes Metall verwendet werden, das sich in der  verwendeten Ätzung jedoch nicht lösen darf.

Claims (1)

  1. PATENTANSPRUCH Verfahren zur Herstellung von lötfähigen Kon taktstellen an dünnen Schichten aus schlecht oder nicht lötfähigen Metallen auf einem isolierenden Trä ger, insbesondere zur Kontaktierung von Tantal schichten bei Dünnfilmschaltungen, dadurch gekenn zeichnet, dass vor dem Aufbringen der schlecht oder nicht lötfähigen Metallschicht auf den Träger eine Schicht aus gut lötfähigem Metall aufgebracht wird, und dass nach dem Aufbringen der Schicht des schlecht oder nicht lötfähigen Metalls ein Teil dieser Schicht mit Hilfe eines Ätzmittels, welches das gut lötfähige Metall nicht löst,
    wieder entfernt und damit die darunterliegende Schicht aus gut lötfähigem Me tall freigelegt' wird. UNTERANSPRüCHE 1. Verfahren nach Patentanspruch, dadurch ge kennzeichnet, dass die Schicht aus gut lötfähigem Metall auf den Träger, gegebenenfalls unter Ver wendung einer Schablone, aufgespritzt, aufgestrichen oder aufgedruckt und danach eingebrannt wird.
    2. Verfahren nach Patentanspruch und Unteran spruch 1, dadurch gekennzeichnet, dass auf die frei gelegten Teile der Schicht aus gut lötfähigem Metall und mindestens auf einem Teil der Schicht aus schlecht lötfähigem Metall eine weitere Schicht aus gut leitendem Metall aufgebracht wird. 3. Verfahren nach Patentanspruch und den Un teransprüchen 1 und 2, dadurch gekennzeichnet, dass bei Schichten aus Tantal als gut lötfähiges Metall Silber verwendet wird. 4.
    Verfahren nach den Unteransprüchen 2 und 3, dadurch gekennzeichnet, dass auf die freigelegten Teile der Silberschicht und mindestens auf einen Teil der Tantalschicht eine Goldschicht aufgebracht wird.
CH1357663A 1962-05-25 1963-11-05 Verfahren zur Herstellung von lötfähigen Kontaktstellen CH424889A (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
GB20201/62A GB1010111A (en) 1962-05-25 1962-05-25 Vapour deposition of metallic films
GB36013/62A GB1044689A (en) 1962-09-21 1962-09-21 Improvements in or relating to mountings for semi-conductor devices
GB39650/62A GB1023531A (en) 1962-05-25 1962-10-19 Improvements in or relating to semiconductor devices
DEST19973A DE1179280B (de) 1962-11-09 1962-11-09 Verfahren zur Herstellung von loetfaehigen Kontaktstellen
GB48863/62A GB1024216A (en) 1962-05-25 1962-12-28 Improvements in or relating to circuit modules including semiconductor devices

Publications (1)

Publication Number Publication Date
CH424889A true CH424889A (de) 1966-11-30

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CH630763A CH422927A (de) 1962-05-25 1963-05-20 Metallschicht auf einer isolierenden Unterlage
CH1256863A CH468719A (de) 1962-05-25 1963-10-14 Halbleitervorrichtung
CH1357663A CH424889A (de) 1962-05-25 1963-11-05 Verfahren zur Herstellung von lötfähigen Kontaktstellen

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CH630763A CH422927A (de) 1962-05-25 1963-05-20 Metallschicht auf einer isolierenden Unterlage
CH1256863A CH468719A (de) 1962-05-25 1963-10-14 Halbleitervorrichtung

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US (1) US3270256A (de)
BE (3) BE632739A (de)
CH (3) CH422927A (de)
DE (2) DE1288174B (de)
GB (2) GB1023531A (de)
NL (3) NL299522A (de)
SE (1) SE316221B (de)

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US3266127A (en) * 1964-01-27 1966-08-16 Ibm Method of forming contacts on semiconductors
US3339274A (en) * 1964-03-16 1967-09-05 Hughes Aircraft Co Top contact for surface protected semiconductor devices
US3325702A (en) * 1964-04-21 1967-06-13 Texas Instruments Inc High temperature electrical contacts for silicon devices
GB1052135A (de) * 1964-11-09
US3477123A (en) * 1965-12-21 1969-11-11 Ibm Masking technique for area reduction of planar transistors
DE1283970B (de) * 1966-03-19 1968-11-28 Siemens Ag Metallischer Kontakt an einem Halbleiterbauelement
US3504430A (en) * 1966-06-27 1970-04-07 Hitachi Ltd Method of making semiconductor devices having insulating films
US3840982A (en) * 1966-12-28 1974-10-15 Westinghouse Electric Corp Contacts for semiconductor devices, particularly integrated circuits, and methods of making the same
US3480841A (en) * 1967-01-13 1969-11-25 Ibm Solderable backside ohmic contact metal system for semiconductor devices and fabrication process therefor
US3460003A (en) * 1967-01-30 1969-08-05 Corning Glass Works Metallized semiconductor device with fired-on glaze consisting of 25-35% pbo,10-15% b2o3,5-10% al2o3,and the balance sio2
GB1258580A (de) * 1967-12-28 1971-12-30
DE1789062C3 (de) * 1968-09-30 1978-11-30 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von Metallkontaktschichten für Halbleiteranordnungen
US3704166A (en) * 1969-06-30 1972-11-28 Ibm Method for improving adhesion between conductive layers and dielectrics
FR2048036B1 (de) * 1969-06-30 1974-10-31 Ibm
DE2807350C2 (de) * 1977-03-02 1983-01-13 Sharp K.K., Osaka Flüssigkristall-Anzeigevorrichtung in Baueinheit mit einem integrierten Schaltkreis
JPS53115069A (en) * 1977-03-18 1978-10-07 Nippon Mining Co Method of producing printed circuit board
FR2547112B1 (fr) * 1983-06-03 1986-11-21 Thomson Csf Procede de realisation d'un circuit hybride et circuit hybride logique ou analogique
FR2986372B1 (fr) * 2012-01-31 2014-02-28 Commissariat Energie Atomique Procede d'assemblage d'un element a puce micro-electronique sur un element filaire, installation permettant de realiser l'assemblage
KR102073790B1 (ko) * 2013-12-09 2020-02-05 삼성전자주식회사 투과형 광 셔터 및 상기 투과형 광 셔터의 제조 방법

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FR793015A (fr) * 1934-10-16 1936-01-15 Dispersion Cathodique S A Perfectionnements apportés à la dispersion cathodique
DE1006692B (de) * 1953-10-29 1957-04-18 Siemens Ag Verfahren zur Herstellung festhaftender Metallbelegungen auf Unterlagen aller Art
GB874965A (en) * 1958-07-09 1961-08-16 G V Planer Ltd Improvements in or relating to electrical circuits or circuit elements
US2973466A (en) * 1959-09-09 1961-02-28 Bell Telephone Labor Inc Semiconductor contact
US3199002A (en) * 1961-04-17 1965-08-03 Fairchild Camera Instr Co Solid-state circuit with crossing leads and method for making the same

Also Published As

Publication number Publication date
US3270256A (en) 1966-08-30
SE316221B (de) 1969-10-20
DE1288174B (de) 1969-01-30
DE1302005C2 (de) 1975-08-07
GB1024216A (en) 1966-03-30
GB1023531A (en) 1966-03-23
CH422927A (de) 1966-10-31
BE639640A (de) 1900-01-01
DE1302005B (de) 1975-08-07
NL298258A (de) 1900-01-01
NL292995A (de) 1900-01-01
CH468719A (de) 1969-02-15
BE637621A (de) 1900-01-01
BE632739A (de) 1900-01-01
NL299522A (de) 1900-01-01

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