DE1281404B - Verfahren zur Herstellung einer halbleitenden Verbindung mit zwei oder mehr Komponenten - Google Patents

Verfahren zur Herstellung einer halbleitenden Verbindung mit zwei oder mehr Komponenten

Info

Publication number
DE1281404B
DE1281404B DES70592A DES0070592A DE1281404B DE 1281404 B DE1281404 B DE 1281404B DE S70592 A DES70592 A DE S70592A DE S0070592 A DES0070592 A DE S0070592A DE 1281404 B DE1281404 B DE 1281404B
Authority
DE
Germany
Prior art keywords
components
compound
elements
compounds
alkyls
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DES70592A
Other languages
German (de)
English (en)
Inventor
Dr Richard Doetzer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL269557D priority Critical patent/NL269557A/xx
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to DES70592A priority patent/DE1281404B/de
Priority to DE1667268A priority patent/DE1667268C3/de
Priority to CH1035461A priority patent/CH441240A/de
Priority to BE608496A priority patent/BE608496A/fr
Priority to FR874342A priority patent/FR1309283A/fr
Priority to US141488A priority patent/US3342551A/en
Priority to GB34990/61A priority patent/GB1010063A/en
Publication of DE1281404B publication Critical patent/DE1281404B/de
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00—Making metallic powder or suspensions thereof
    • B22F9/16—Making metallic powder or suspensions thereof using chemical processes
    • B22F9/30—Making metallic powder or suspensions thereof using chemical processes with decomposition of metal compounds, e.g. by pyrolysis
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/06—Hydrogen phosphides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G30/00—Compounds of antimony
    • C01G30/008—Sulfides
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/007—Preparing arsenides or antimonides, especially of the III-VI-compound type, e.g. aluminium or gallium arsenide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/60—Optical properties, e.g. expressed in CIELAB-values
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S420/00—Alloys or metallic compositions
    • Y10S420/903—Semiconductive

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DES70592A 1960-09-28 1960-09-28 Verfahren zur Herstellung einer halbleitenden Verbindung mit zwei oder mehr Komponenten Pending DE1281404B (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
NL269557D NL269557A (enExample) 1960-09-28
DES70592A DE1281404B (de) 1960-09-28 1960-09-28 Verfahren zur Herstellung einer halbleitenden Verbindung mit zwei oder mehr Komponenten
DE1667268A DE1667268C3 (de) 1960-09-28 1960-09-28 Ve.rfahren zur Herstellung von pulverfbrmigen, halbleitenden Verbindungen mit zwei oder mehr Komponenten. Ausscheidung aus: 1281404
CH1035461A CH441240A (de) 1960-09-28 1961-09-06 Verfahren zum Herstellen einer halbleitenden Verbindung aus zwei oder mehreren Komponenten
BE608496A BE608496A (fr) 1960-09-28 1961-09-25 Procédé de fabrication d'un composé semi-conducteur comportant deux ou plus de deux composants.
FR874342A FR1309283A (fr) 1960-09-28 1961-09-27 Procédé de fabrication d'un composé semi-conducteur comportant deux ou plus de deux composants
US141488A US3342551A (en) 1960-09-28 1961-09-28 Method and apparatus for producing a semiconducting compound of two or more components
GB34990/61A GB1010063A (en) 1960-09-28 1961-09-28 Method of preparing semi-conducting substances

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES70592A DE1281404B (de) 1960-09-28 1960-09-28 Verfahren zur Herstellung einer halbleitenden Verbindung mit zwei oder mehr Komponenten

Publications (1)

Publication Number Publication Date
DE1281404B true DE1281404B (de) 1968-10-24

Family

ID=7501851

Family Applications (1)

Application Number Title Priority Date Filing Date
DES70592A Pending DE1281404B (de) 1960-09-28 1960-09-28 Verfahren zur Herstellung einer halbleitenden Verbindung mit zwei oder mehr Komponenten

Country Status (6)

Country Link
US (1) US3342551A (enExample)
BE (1) BE608496A (enExample)
CH (1) CH441240A (enExample)
DE (1) DE1281404B (enExample)
GB (1) GB1010063A (enExample)
NL (1) NL269557A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3492175A (en) * 1965-12-17 1970-01-27 Texas Instruments Inc Method of doping semiconductor material
US3462323A (en) * 1966-12-05 1969-08-19 Monsanto Co Process for the preparation of compound semiconductors
SU570239A1 (ru) * 1976-02-12 1979-02-10 Институт химии АН СССР "Способ получени кристаллических соединений а1у ву14
FR2403646A1 (fr) 1977-09-16 1979-04-13 Anvar Procede de realisation d'un depot de compose semi-conducteur d'elements iii et v
US4594264A (en) * 1984-11-20 1986-06-10 Hughes Aircraft Company Method for forming gallium arsenide from thin solid films of gallium-arsenic complexes
US4814203A (en) * 1986-09-29 1989-03-21 Ethyl Corporation Vapor deposition of arsenic

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT211792B (de) * 1953-10-02 1960-11-10 Int Standard Electric Corp Verfahren zur Herstellung von Kristalliten oder einem Einkristall aus einen Gehalt an Störstoffen besitzendem halbleitendem Material bzw. von Halbleiterlegierungen

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2020298A (en) * 1935-11-12 Cyclic ester
US2464685A (en) * 1946-12-02 1949-03-15 Diamond Alkali Co Continuous grignard method
US2980500A (en) * 1958-04-25 1961-04-18 Monsanto Chemicals Method for the preparation of semiconductor cadmium compounds
US3010792A (en) * 1959-08-31 1961-11-28 Union Carbide Corp Preparation of indium phosphide

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT211792B (de) * 1953-10-02 1960-11-10 Int Standard Electric Corp Verfahren zur Herstellung von Kristalliten oder einem Einkristall aus einen Gehalt an Störstoffen besitzendem halbleitendem Material bzw. von Halbleiterlegierungen

Also Published As

Publication number Publication date
US3342551A (en) 1967-09-19
CH441240A (de) 1967-08-15
BE608496A (fr) 1962-01-15
NL269557A (enExample)
GB1010063A (en) 1965-11-17

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