DE1224279B - Verfahren zur Herstellung kristalliner, insbesondere einkristalliner, aus Halbleiter-material bestehender, dotierter Schichten auf kristallinen Grundkoerpern aus Halbleitermaterial - Google Patents

Verfahren zur Herstellung kristalliner, insbesondere einkristalliner, aus Halbleiter-material bestehender, dotierter Schichten auf kristallinen Grundkoerpern aus Halbleitermaterial

Info

Publication number
DE1224279B
DE1224279B DES88949A DES0088949A DE1224279B DE 1224279 B DE1224279 B DE 1224279B DE S88949 A DES88949 A DE S88949A DE S0088949 A DES0088949 A DE S0088949A DE 1224279 B DE1224279 B DE 1224279B
Authority
DE
Germany
Prior art keywords
pressure
dopant
crystalline
vessel
semiconductor material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DES88949A
Other languages
German (de)
English (en)
Inventor
Dipl-Chem Dr Erich Pammer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to DES88949A priority Critical patent/DE1224279B/de
Priority to NL6414906A priority patent/NL6414906A/xx
Priority to US420638A priority patent/US3348984A/en
Priority to CH1682864A priority patent/CH440230A/de
Priority to FR589A priority patent/FR1419372A/fr
Priority to GB90/65A priority patent/GB1041941A/en
Priority to BE657894A priority patent/BE657894A/xx
Publication of DE1224279B publication Critical patent/DE1224279B/de
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
    • C30B31/165—Diffusion sources
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
    • B01F23/10—Mixing gases with gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H10P95/00—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00—Coating apparatus
    • Y10S118/90—Semiconductor vapor doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/925—Fluid growth doping control, e.g. delta doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/935—Gas flow control

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DES88949A 1964-01-03 1964-01-03 Verfahren zur Herstellung kristalliner, insbesondere einkristalliner, aus Halbleiter-material bestehender, dotierter Schichten auf kristallinen Grundkoerpern aus Halbleitermaterial Pending DE1224279B (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
DES88949A DE1224279B (de) 1964-01-03 1964-01-03 Verfahren zur Herstellung kristalliner, insbesondere einkristalliner, aus Halbleiter-material bestehender, dotierter Schichten auf kristallinen Grundkoerpern aus Halbleitermaterial
NL6414906A NL6414906A (enExample) 1964-01-03 1964-12-21
US420638A US3348984A (en) 1964-01-03 1964-12-23 Method of growing doped crystalline layers of semiconductor material upon crystalline semiconductor bodies
CH1682864A CH440230A (de) 1964-01-03 1964-12-30 Verfahren zur Herstellung einer dotierten Schicht an der Oberfläche eines Halbleiterkristalls
FR589A FR1419372A (fr) 1964-01-03 1964-12-31 Procédé pour faire croître des couches semi-conductrices cristallines, en particulier monocristallines, et dopées, sur des cristaux semi-conducteurs
GB90/65A GB1041941A (en) 1964-01-03 1965-01-01 Improvements in or relating to processes for the manufacture of gas mixtures and forthe manufacture of homogeneously doped crystalline layers of semiconductor material
BE657894A BE657894A (enExample) 1964-01-03 1965-01-04

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES88949A DE1224279B (de) 1964-01-03 1964-01-03 Verfahren zur Herstellung kristalliner, insbesondere einkristalliner, aus Halbleiter-material bestehender, dotierter Schichten auf kristallinen Grundkoerpern aus Halbleitermaterial

Publications (1)

Publication Number Publication Date
DE1224279B true DE1224279B (de) 1966-09-08

Family

ID=7514777

Family Applications (1)

Application Number Title Priority Date Filing Date
DES88949A Pending DE1224279B (de) 1964-01-03 1964-01-03 Verfahren zur Herstellung kristalliner, insbesondere einkristalliner, aus Halbleiter-material bestehender, dotierter Schichten auf kristallinen Grundkoerpern aus Halbleitermaterial

Country Status (7)

Country Link
US (1) US3348984A (enExample)
BE (1) BE657894A (enExample)
CH (1) CH440230A (enExample)
DE (1) DE1224279B (enExample)
FR (1) FR1419372A (enExample)
GB (1) GB1041941A (enExample)
NL (1) NL6414906A (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1245335B (de) * 1964-06-26 1967-07-27 Siemens Ag Verfahren zur Herstellung einkristalliner, homogen bordotierter, insbesondere aus Silicium oder Germanium bestehender Aufwachsschichten auf einkristallinen Grundkoerpern
US3630678A (en) * 1968-06-26 1971-12-28 Univ Case Western Reserve Diamond growth process
US3630679A (en) * 1968-06-26 1971-12-28 Univ Case Western Reserve Diamond growth process
US3607061A (en) * 1968-06-26 1971-09-21 Univ Case Western Reserve Manufacture of synthetic diamonds
US3617371A (en) * 1968-11-13 1971-11-02 Hewlett Packard Co Method and means for producing semiconductor material
US3615208A (en) * 1969-02-06 1971-10-26 John W Byron Diamond growth process
US4517220A (en) * 1983-08-15 1985-05-14 Motorola, Inc. Deposition and diffusion source control means and method
US4717596A (en) * 1985-10-30 1988-01-05 International Business Machines Corporation Method for vacuum vapor deposition with improved mass flow control
DE69126959T2 (de) * 1990-10-05 1997-11-27 Fujitsu Ltd Wasserdampfversorgungseinrichtung
US5832177A (en) * 1990-10-05 1998-11-03 Fujitsu Limited Method for controlling apparatus for supplying steam for ashing process
FR2719787B1 (fr) * 1994-05-10 1996-06-14 Air Liquide Fabrication de mélanges de gaz à très basse teneurs.
US6817381B2 (en) * 1999-08-24 2004-11-16 Tokyo Electron Limited Gas processing apparatus, gas processing method and integrated valve unit for gas processing apparatus
US6473564B1 (en) * 2000-01-07 2002-10-29 Nihon Shinku Gijutsu Kabushiki Kaisha Method of manufacturing thin organic film

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3172857A (en) * 1960-06-14 1965-03-09 Method for probucmg homogeneously boped monocrystalline bodies of ele- mental semiconductors
US3173812A (en) * 1961-02-27 1965-03-16 Yardney International Corp Deferred-action battery
US3173802A (en) * 1961-12-14 1965-03-16 Bell Telephone Labor Inc Process for controlling gas phase composition
US3155621A (en) * 1962-07-13 1964-11-03 Plessey Co Ltd Production of silicon with a predetermined impurity content
US3318814A (en) * 1962-07-24 1967-05-09 Siemens Ag Doped semiconductor process and products produced thereby

Also Published As

Publication number Publication date
BE657894A (enExample) 1965-07-05
US3348984A (en) 1967-10-24
FR1419372A (fr) 1965-11-26
NL6414906A (enExample) 1965-07-05
GB1041941A (en) 1966-09-07
CH440230A (de) 1967-07-31

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