DE1218618B - Diffusionsverfahren zum Herstellen eines Transistors - Google Patents

Diffusionsverfahren zum Herstellen eines Transistors

Info

Publication number
DE1218618B
DE1218618B DEN16874A DEN0016874A DE1218618B DE 1218618 B DE1218618 B DE 1218618B DE N16874 A DEN16874 A DE N16874A DE N0016874 A DEN0016874 A DE N0016874A DE 1218618 B DE1218618 B DE 1218618B
Authority
DE
Germany
Prior art keywords
zone
impurity
conductivity
diffusion
diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEN16874A
Other languages
German (de)
English (en)
Inventor
Louis Marius Nijland
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE1218618B publication Critical patent/DE1218618B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
DEN16874A 1958-06-26 1959-06-23 Diffusionsverfahren zum Herstellen eines Transistors Pending DE1218618B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL229074 1958-06-26

Publications (1)

Publication Number Publication Date
DE1218618B true DE1218618B (de) 1966-06-08

Family

ID=19751262

Family Applications (1)

Application Number Title Priority Date Filing Date
DEN16874A Pending DE1218618B (de) 1958-06-26 1959-06-23 Diffusionsverfahren zum Herstellen eines Transistors

Country Status (5)

Country Link
US (1) US3006789A (enExample)
DE (1) DE1218618B (enExample)
FR (1) FR1227934A (enExample)
GB (1) GB914316A (enExample)
NL (2) NL105824C (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1300162B (de) * 1966-10-05 1969-07-31 Westinghouse Electric Corp Verfahren zur Herstellung eines Thyristors

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3041214A (en) * 1959-09-25 1962-06-26 Clevite Corp Method of forming junction semiconductive devices having thin layers
NL268758A (enExample) * 1960-09-20
NL275313A (enExample) * 1961-05-10
US3362856A (en) * 1961-11-13 1968-01-09 Transitron Electronic Corp Silicon transistor device
US3165430A (en) * 1963-01-21 1965-01-12 Siliconix Inc Method of ultra-fine semiconductor manufacture
US3490962A (en) * 1966-04-25 1970-01-20 Ibm Diffusion process

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1018588B (de) * 1955-03-28 1957-10-31 Glaxo Lab Ltd Verfahren zur Herstellung von Griseofulvin auf biologischem Wege
DE1024640B (de) * 1953-07-22 1958-02-20 Int Standard Electric Corp Verfahren zur Herstellung von Kristalloden
FR1154322A (fr) * 1955-06-28 1958-04-04 Western Electric Co Dispositif semi-conducteur

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2841510A (en) * 1958-07-01 Method of producing p-n junctions in
US2823148A (en) * 1953-03-02 1958-02-11 Rca Corp Method for removing portions of semiconductor device electrodes
BE529698A (enExample) * 1953-06-19
BE531626A (enExample) * 1953-09-04
US2898247A (en) * 1955-10-24 1959-08-04 Ibm Fabrication of diffused junction semi-conductor devices
BE562491A (enExample) * 1956-03-05 1900-01-01
US2910634A (en) * 1957-05-31 1959-10-27 Ibm Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1024640B (de) * 1953-07-22 1958-02-20 Int Standard Electric Corp Verfahren zur Herstellung von Kristalloden
DE1018588B (de) * 1955-03-28 1957-10-31 Glaxo Lab Ltd Verfahren zur Herstellung von Griseofulvin auf biologischem Wege
FR1154322A (fr) * 1955-06-28 1958-04-04 Western Electric Co Dispositif semi-conducteur

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1300162B (de) * 1966-10-05 1969-07-31 Westinghouse Electric Corp Verfahren zur Herstellung eines Thyristors

Also Published As

Publication number Publication date
FR1227934A (fr) 1960-08-24
GB914316A (en) 1963-01-02
US3006789A (en) 1961-10-31
NL229074A (enExample)
NL105824C (enExample)

Similar Documents

Publication Publication Date Title
DE2125303C3 (de) Verfahren zum Herstellen einer Halbleiteranordnung
DE2517690B2 (de) Verfahren zum Herstellen eines Halbleiterbauelements
DE2357376C3 (de) Mesa-Thyristor und Verfahren zu seiner Herstellung
DE2633714C2 (de) Integrierte Halbleiter-Schaltungsanordnung mit einem bipolaren Transistor und Verfahren zu ihrer Herstellung
DE1259469B (de) Verfahren zur Herstellung von inversionsschichtfreien Halbleiteruebergaengen
DE1105524B (de) Verfahren zur Herstellung einer Halbleiteranordnung, insbesondere eines Transistors,mit einer auflegierten Elektrode
DE1218618B (de) Diffusionsverfahren zum Herstellen eines Transistors
DE1918054A1 (de) Verfahren zur Herstellung von Halbleiter-Bauelementen
DE3039009C2 (de) Sperrschicht-Feldeffekttransistor
DE2219696A1 (de) Verfahren zur Isolationsbereichsbildung
DE1614827C2 (de) Verfahren zum Herstellen eines Transistors
DE1916969B2 (de) Verfahren zur herstellung eines integrierten widerstandes
DE2507038B2 (de) Inverser Planartransistor und Verfahren zu seiner Herstellung
DE1764829B1 (de) Planartransistor mit einem scheibenfoermigen halbleiter koerper
DE1514656A1 (de) Verfahren zum Herstellen von Halbleiterkoerpern
DE1090330B (de) Halbleiteranordnung mit einem Halbleiterkoerper mit zwei Zonen entgegengesetzten Leitfaehigkeitstyps und je einer Elektrode an den beiden Zonen
DE2120832B2 (de) Verfahren zum Herstellen eines monolithischen, einen integrierten Schaltkreis bildenden Bauteils mit einem Halbleiterkörper
DE1614286C3 (de) Halbleiteranordnung und Verfahren zu ihrer Herstellung
DE1769271C3 (de) Verfahren zum Herstellen einer Festkörperschaltung
DE2541161A1 (de) Verfahren zur herstellung monolithischer komplementaerer transistoren
DE2131993C2 (de) Verfahren zum Herstellen eines niederohmigen Anschlusses
DE2602395C3 (de) Monolithisch integrierter I2 L-Planartransistor und Verfahren zu seiner Herstellung
DE1514865C (de) Verfahren zum Herstellen einer Halbleiteranordnung
DE1194501B (de) Streifenfoermige durch eine Isolierschicht von dem Halbleiterkoerper getrennte Zuleitung zu einer Elektrode eines Halbleiterbauelements, Halbleiterbauelement und Verfahren zum Herstellen
DE1639055B1 (de) Verfahren zum herstellen einer halbleiteranordnung und danach hergestellte halbleiteranordnung