DE1212948B - Verfahren zum Herstellen von reinen Siliciumstaeben - Google Patents
Verfahren zum Herstellen von reinen SiliciumstaebenInfo
- Publication number
- DE1212948B DE1212948B DES65680A DES0065680A DE1212948B DE 1212948 B DE1212948 B DE 1212948B DE S65680 A DES65680 A DE S65680A DE S0065680 A DES0065680 A DE S0065680A DE 1212948 B DE1212948 B DE 1212948B
- Authority
- DE
- Germany
- Prior art keywords
- carrier
- power source
- voltage
- silicon
- operating power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052710 silicon Inorganic materials 0.000 title claims description 23
- 239000010703 silicon Substances 0.000 title claims description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 20
- 238000000034 method Methods 0.000 title claims description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000000969 carrier Substances 0.000 claims description 30
- 238000006243 chemical reaction Methods 0.000 claims description 12
- 238000001816 cooling Methods 0.000 claims description 5
- 150000003377 silicon compounds Chemical class 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 238000000354 decomposition reaction Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000010453 quartz Substances 0.000 description 4
- 239000012495 reaction gas Substances 0.000 description 3
- 230000006641 stabilisation Effects 0.000 description 3
- 238000011105 stabilization Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 210000003608 fece Anatomy 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4418—Methods for making free-standing articles
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL256255D NL256255A (en, 2012) | 1959-11-02 | ||
| DES65680A DE1212948B (de) | 1959-11-02 | 1959-11-02 | Verfahren zum Herstellen von reinen Siliciumstaeben |
| CH1143660A CH478594A (de) | 1959-11-02 | 1960-10-12 | Verfahren zum Herstellen hochreiner Siliciumstäbe |
| BE596545A BE596545R (fr) | 1959-11-02 | 1960-10-28 | Procédé pour la préparation de silicium très pur |
| US66357A US3053638A (en) | 1959-11-02 | 1960-10-31 | Method and apparatus for producing hyperpure silicon rods |
| GB37496/60A GB922280A (en) | 1954-05-18 | 1960-11-01 | Improvements in or relating to processes and apparatus for the production of ultra-pure semiconductor substances |
| SE10554/60A SE304749B (en, 2012) | 1959-11-02 | 1960-11-02 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES65680A DE1212948B (de) | 1959-11-02 | 1959-11-02 | Verfahren zum Herstellen von reinen Siliciumstaeben |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1212948B true DE1212948B (de) | 1966-03-24 |
Family
ID=7498226
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DES65680A Pending DE1212948B (de) | 1954-05-18 | 1959-11-02 | Verfahren zum Herstellen von reinen Siliciumstaeben |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3053638A (en, 2012) |
| BE (1) | BE596545R (en, 2012) |
| CH (1) | CH478594A (en, 2012) |
| DE (1) | DE1212948B (en, 2012) |
| NL (1) | NL256255A (en, 2012) |
| SE (1) | SE304749B (en, 2012) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2315469A1 (de) * | 1973-03-28 | 1974-10-10 | Siemens Ag | Verfahren zum herstellen von hochreinem silizium oder anderem halbleitermaterial |
| US4681652A (en) * | 1980-06-05 | 1987-07-21 | Rogers Leo C | Manufacture of polycrystalline silicon |
| WO2010066479A1 (de) * | 2008-12-09 | 2010-06-17 | Centrotherm Sitec Gmbh | Verfahren zur stromversorgung eines cvd-prozesses bei der siliziumabscheidung |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL246189A (en, 2012) * | 1958-12-09 | |||
| DE1223804B (de) * | 1961-01-26 | 1966-09-01 | Siemens Ag | Vorrichtung zur Gewinnung reinen Halbleitermaterials, wie Silicium |
| DE1137807B (de) * | 1961-06-09 | 1962-10-11 | Siemens Ag | Verfahren zur Herstellung von Halbleiteranordnungen durch einkristalline Abscheidung von Halbleitermaterial aus der Gasphase |
| DE1244733B (de) * | 1963-11-05 | 1967-07-20 | Siemens Ag | Vorrichtung zum Aufwachsen einkristalliner Halbleitermaterialschichten auf einkristallinen Grundkoerpern |
| DE1262244B (de) * | 1964-12-23 | 1968-03-07 | Siemens Ag | Verfahren zum epitaktischen Abscheiden einer kristallinen Schicht, insbesondere aus Halbleitermaterial |
| DE1297086B (de) * | 1965-01-29 | 1969-06-12 | Siemens Ag | Verfahren zum Herstellen einer Schicht von einkristallinem Halbleitermaterial |
| US3372671A (en) * | 1965-05-26 | 1968-03-12 | Westinghouse Electric Corp | Apparatus for producing vapor growth of silicon crystals |
| US3610202A (en) * | 1969-05-23 | 1971-10-05 | Siemens Ag | Epitactic apparatus |
| BE806098A (fr) * | 1973-03-28 | 1974-02-01 | Siemens Ag | Procede de fabrication de silicium ou autre matiere semi-conductrice tres pure |
| JPS53106626A (en) * | 1977-03-02 | 1978-09-16 | Komatsu Mfg Co Ltd | Method of making high purity rod silicon and appratus therefor |
| JPS53108029A (en) * | 1977-03-03 | 1978-09-20 | Komatsu Mfg Co Ltd | Method of making high purity silicon having uniform shape |
| DE2753567C3 (de) * | 1977-12-01 | 1982-04-15 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zur Herstellung von hochreinen Halbleitermaterialien und Reinstmetallen |
| US4292344A (en) * | 1979-02-23 | 1981-09-29 | Union Carbide Corporation | Fluidized bed heating process and apparatus |
| DE2928456C2 (de) * | 1979-07-13 | 1983-07-07 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zur Herstellung von hochreinem Silicium |
| US5810934A (en) * | 1995-06-07 | 1998-09-22 | Advanced Silicon Materials, Inc. | Silicon deposition reactor apparatus |
| JP5119856B2 (ja) * | 2006-11-29 | 2013-01-16 | 三菱マテリアル株式会社 | トリクロロシラン製造装置 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2763581A (en) * | 1952-11-25 | 1956-09-18 | Raytheon Mfg Co | Process of making p-n junction crystals |
| NL113118C (en, 2012) * | 1954-05-18 | 1900-01-01 |
-
0
- NL NL256255D patent/NL256255A/xx unknown
-
1959
- 1959-11-02 DE DES65680A patent/DE1212948B/de active Pending
-
1960
- 1960-10-12 CH CH1143660A patent/CH478594A/de not_active IP Right Cessation
- 1960-10-28 BE BE596545A patent/BE596545R/fr active
- 1960-10-31 US US66357A patent/US3053638A/en not_active Expired - Lifetime
- 1960-11-02 SE SE10554/60A patent/SE304749B/xx unknown
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2315469A1 (de) * | 1973-03-28 | 1974-10-10 | Siemens Ag | Verfahren zum herstellen von hochreinem silizium oder anderem halbleitermaterial |
| US4681652A (en) * | 1980-06-05 | 1987-07-21 | Rogers Leo C | Manufacture of polycrystalline silicon |
| WO2010066479A1 (de) * | 2008-12-09 | 2010-06-17 | Centrotherm Sitec Gmbh | Verfahren zur stromversorgung eines cvd-prozesses bei der siliziumabscheidung |
Also Published As
| Publication number | Publication date |
|---|---|
| NL256255A (en, 2012) | |
| BE596545R (fr) | 1961-02-15 |
| US3053638A (en) | 1962-09-11 |
| CH478594A (de) | 1969-09-30 |
| SE304749B (en, 2012) | 1968-10-07 |
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