DE1186951B - Verfahren zum Herstellen einer hermetisch eingeschlossenen Halbleiteranordnung - Google Patents

Verfahren zum Herstellen einer hermetisch eingeschlossenen Halbleiteranordnung

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Publication number
DE1186951B
DE1186951B DET18339A DET0018339A DE1186951B DE 1186951 B DE1186951 B DE 1186951B DE T18339 A DET18339 A DE T18339A DE T0018339 A DET0018339 A DE T0018339A DE 1186951 B DE1186951 B DE 1186951B
Authority
DE
Germany
Prior art keywords
attached
semiconductor body
semiconductor
carrier plate
conductive strips
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DET18339A
Other languages
German (de)
English (en)
Inventor
Jack St Clair Bilby
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE1186951B publication Critical patent/DE1186951B/de
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49121—Beam lead frame or beam lead device
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Wire Bonding (AREA)
  • Manufacture Of Switches (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
DET18339A 1959-05-06 1960-05-06 Verfahren zum Herstellen einer hermetisch eingeschlossenen Halbleiteranordnung Pending DE1186951B (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US811470A US3072832A (en) 1959-05-06 1959-05-06 Semiconductor structure fabrication
US46742865A 1965-06-28 1965-06-28
US60972067A 1967-01-13 1967-01-13

Publications (1)

Publication Number Publication Date
DE1186951B true DE1186951B (de) 1965-02-11

Family

ID=27413014

Family Applications (2)

Application Number Title Priority Date Filing Date
DET18339A Pending DE1186951B (de) 1959-05-06 1960-05-06 Verfahren zum Herstellen einer hermetisch eingeschlossenen Halbleiteranordnung
DEI20337A Pending DE1283965B (de) 1959-05-06 1960-05-06 Hermetisch eingeschlossene Halbleiteranordnung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DEI20337A Pending DE1283965B (de) 1959-05-06 1960-05-06 Hermetisch eingeschlossene Halbleiteranordnung

Country Status (7)

Country Link
US (1) US3072832A (enExample)
CH (1) CH410195A (enExample)
DE (2) DE1186951B (enExample)
GB (1) GB958241A (enExample)
LU (1) LU38605A1 (enExample)
MY (1) MY6900309A (enExample)
NL (1) NL251301A (enExample)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB985864A (en) * 1960-08-05 1965-03-10 Telefunken Patent A semiconductor device
BE624958A (enExample) * 1961-11-20
US3173028A (en) * 1962-02-13 1965-03-09 Westinghouse Electric Corp Solid state bistable multivibrator
DE1287696B (enExample) * 1962-04-16 1969-01-23
NL292051A (enExample) * 1962-04-27
US3303265A (en) * 1962-05-17 1967-02-07 Texas Instruments Inc Miniature semiconductor enclosure
US3271625A (en) * 1962-08-01 1966-09-06 Signetics Corp Electronic package assembly
NL298196A (enExample) * 1962-09-22
US3274456A (en) * 1962-11-21 1966-09-20 Gen Instrument Corp Rectifier assembly and method of making same
US3325586A (en) * 1963-03-05 1967-06-13 Fairchild Camera Instr Co Circuit element totally encapsulated in glass
US3311798A (en) * 1963-09-27 1967-03-28 Trw Semiconductors Inc Component package
US3185865A (en) * 1963-03-26 1965-05-25 Bert W Larey Transistoried multivibrator with built-in time delay
US3231797A (en) * 1963-09-20 1966-01-25 Nat Semiconductor Corp Semiconductor device
US3383454A (en) * 1964-01-10 1968-05-14 Gti Corp Micromodular package
US3341649A (en) * 1964-01-17 1967-09-12 Signetics Corp Modular package for semiconductor devices
US3324530A (en) * 1964-07-24 1967-06-13 Ralph L Sherwood Connector support assembly for transistor connector and method of making the support assembly
US3312771A (en) * 1964-08-07 1967-04-04 Nat Beryllia Corp Microelectronic package
DE1514273B2 (de) * 1964-08-21 1974-08-22 Nippon Electric Co., Ltd., Tokio Halbleiteranordmng
US3340347A (en) * 1964-10-12 1967-09-05 Corning Glass Works Enclosed electronic device
US3388301A (en) * 1964-12-09 1968-06-11 Signetics Corp Multichip integrated circuit assembly with interconnection structure
US3349481A (en) * 1964-12-29 1967-10-31 Alpha Microelectronics Company Integrated circuit sealing method and structure
US3340602A (en) * 1965-02-01 1967-09-12 Philco Ford Corp Process for sealing
US3265806A (en) * 1965-04-05 1966-08-09 Sprague Electric Co Encapsulated flat package for electronic parts
US3374533A (en) * 1965-05-26 1968-03-26 Sprague Electric Co Semiconductor mounting and assembly method
US3522490A (en) * 1965-06-28 1970-08-04 Texas Instruments Inc Semiconductor package with heat conducting mounting extending from package on side opposite conductor extensions
US3386015A (en) * 1965-10-21 1968-05-28 Texas Instruments Inc Semiconductor element having an organic silicone base cement
US3271507A (en) * 1965-11-02 1966-09-06 Alloys Unltd Inc Flat package for semiconductors
US3404215A (en) * 1966-04-14 1968-10-01 Sprague Electric Co Hermetically sealed electronic module
US3388302A (en) * 1966-12-30 1968-06-11 Coors Porcelain Co Ceramic housing for semiconductor components
US3497774A (en) * 1967-06-07 1970-02-24 Beckman Instruments Inc Electrical circuit module and method of manufacture
US3502786A (en) * 1967-06-14 1970-03-24 Milton Stoll Flat pack spacer of low thermal diffusivity
US3538597A (en) * 1967-07-13 1970-11-10 Us Navy Flatpack lid and method
US3495023A (en) * 1968-06-14 1970-02-10 Nat Beryllia Corp Flat pack having a beryllia base and an alumina ring
US3792525A (en) * 1971-08-04 1974-02-19 Gen Motors Corp Method of making a semiconductive signal translating device
US3919602A (en) * 1972-03-23 1975-11-11 Bosch Gmbh Robert Electric circuit arrangement and method of making the same
JPS545264B1 (enExample) * 1975-05-19 1979-03-15
US4402134A (en) * 1977-11-14 1983-09-06 Edison International, Inc. Method of making an integrated display device
US4291815B1 (en) * 1980-02-19 1998-09-29 Semiconductor Packaging Materi Ceramic lid assembly for hermetic sealing of a semiconductor chip
US5134462A (en) * 1990-08-27 1992-07-28 Motorola, Inc. Flexible film chip carrier having a flexible film substrate and means for maintaining planarity of the substrate
US20070026691A1 (en) * 2005-07-07 2007-02-01 Mks Instruments Inc. Low-field non-contact charging apparatus for testing substrates

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB599341A (en) * 1944-03-24 1948-03-10 Western Electric Co Improvements in electrical translating devices such as contact rectifiers
US2633489A (en) * 1951-04-03 1953-03-31 Gen Electric Crystal valve or rectifier
US2762954A (en) * 1950-09-09 1956-09-11 Sylvania Electric Prod Method for assembling transistors
GB780251A (en) * 1954-02-18 1957-07-31 Pye Ltd Improvements in or relating to junction transistors
DE1044287B (de) * 1954-03-10 1958-11-20 Sylvania Electric Prod Legierungsverfahren zur Herstellung von Halbleiter-anordnungen mit p-n-UEbergaengen

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2773239A (en) * 1956-12-04 Electrical indicating instruments
GB786299A (enExample) * 1900-01-01
CA272437A (en) * 1925-10-22 1927-07-19 Edgar Lilienfeld Julius Electric current control mechanism
CH162656A (de) * 1930-10-17 1933-06-30 Ig Farbenindustrie Ag Verfahren zur Herstellung des Natriumsalzes einer Wismutkomplexverbindung von Brenzcatechinarsinsäure.
US2446254A (en) * 1942-12-07 1948-08-03 Hartford Nat Bank & Trust Co Blocking-layer cell
BE613876A (enExample) * 1946-03-04
NL84061C (enExample) * 1948-06-26
NL91400C (enExample) * 1950-06-28
DE950491C (de) * 1951-09-15 1956-10-11 Gen Electric Gleichrichterelement
US2743430A (en) * 1952-03-01 1956-04-24 Rca Corp Information storage devices
BE520380A (enExample) * 1952-06-02
US2641717A (en) * 1952-08-28 1953-06-09 Us Navy Transistor one-shot multivibrator
NL178165B (nl) * 1953-05-07 1900-01-01 Bristol Myers Co Werkwijze voor het bereiden of vervaardigen van een geneesmiddel met bloeddrukverlagende en/of bloedplaatjesaggregatie tegenwerkende activiteit; werkwijze voor het bereiden van een verbinding met een dergelijke activiteit.
US2827574A (en) * 1953-08-24 1958-03-18 Hoffman Electronics Corp Multivibrators
US2804581A (en) * 1953-10-05 1957-08-27 Sarkes Tarzian Semiconductor device and method of manufacture thereof
NL91651C (enExample) * 1953-12-09
BE546546A (enExample) * 1955-04-04 1900-01-01
US2846655A (en) * 1955-08-19 1958-08-05 Hughes Aircraft Co Impregnated ferrite
GB809970A (en) * 1955-09-12 1959-03-04 Siemens Ag Improvements in or relating to hall voltage generators
DE1069719B (enExample) * 1955-11-09 1959-11-26
US2883592A (en) * 1955-12-30 1959-04-21 Gen Electric Encapsulated selenium rectifiers
GB806789A (en) * 1956-01-27 1958-12-31 Gen Electric Co Ltd Improvements in or relating to cadmium sulphide
US2889952A (en) * 1956-02-01 1959-06-09 Corning Glass Works Composite article and method
US2905873A (en) * 1956-09-17 1959-09-22 Rca Corp Semiconductor power devices and method of manufacture
US2910634A (en) * 1957-05-31 1959-10-27 Ibm Semiconductor device
US3021461A (en) * 1958-09-10 1962-02-13 Gen Electric Semiconductor device
US2985806A (en) * 1958-12-24 1961-05-23 Philco Corp Semiconductor fabrication
US3029366A (en) * 1959-04-22 1962-04-10 Sprague Electric Co Multiple semiconductor assembly

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB599341A (en) * 1944-03-24 1948-03-10 Western Electric Co Improvements in electrical translating devices such as contact rectifiers
US2762954A (en) * 1950-09-09 1956-09-11 Sylvania Electric Prod Method for assembling transistors
US2633489A (en) * 1951-04-03 1953-03-31 Gen Electric Crystal valve or rectifier
GB780251A (en) * 1954-02-18 1957-07-31 Pye Ltd Improvements in or relating to junction transistors
DE1044287B (de) * 1954-03-10 1958-11-20 Sylvania Electric Prod Legierungsverfahren zur Herstellung von Halbleiter-anordnungen mit p-n-UEbergaengen

Also Published As

Publication number Publication date
GB958241A (en) 1964-05-21
CH410195A (fr) 1966-03-31
LU38605A1 (enExample)
DE1283965B (de) 1968-11-28
MY6900309A (en) 1969-12-31
US3072832A (en) 1963-01-08
NL251301A (enExample) 1900-01-01

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