GB599341A - Improvements in electrical translating devices such as contact rectifiers - Google Patents
Improvements in electrical translating devices such as contact rectifiersInfo
- Publication number
- GB599341A GB599341A GB23834/45A GB2383445A GB599341A GB 599341 A GB599341 A GB 599341A GB 23834/45 A GB23834/45 A GB 23834/45A GB 2383445 A GB2383445 A GB 2383445A GB 599341 A GB599341 A GB 599341A
- Authority
- GB
- United Kingdom
- Prior art keywords
- grinding
- silicon
- lap
- cemented
- polishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Abstract
599,341. Grinding and polishing. WESTERN ELECTRIC CO., Inc. Sept. 14, 1945, No. 23834. Convention date, March 24. 1944. [Class 60] [Also in Group XL] Wedge shaped units of silicon of the form shown in Fig. 7 for use in crystal detectors are formed by grinding the surface of flat rectangular wafers of silicon. The wafers 2 are cemented into recesses in a chuck plate 3 at the desired angle. The chuck plate 3 is driven by shaft 4 which imparts both a rotary and an oscillatory movement relative to a grooved meta] lap 6 which is rotated at the bottom of a suitable bath 5, an abrasive such as boron carbide being used. After one face 12 has been formed on the silicon wedge the grinding lap 6 is by a polishing lap. The units are then removed und cemented into the chuck again in reversed position and the second face 12 is ground and then polished.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US528009A US2441590A (en) | 1944-03-24 | 1944-03-24 | Translating device |
Publications (1)
Publication Number | Publication Date |
---|---|
GB599341A true GB599341A (en) | 1948-03-10 |
Family
ID=24103887
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB23834/45A Expired GB599341A (en) | 1944-03-24 | 1945-09-14 | Improvements in electrical translating devices such as contact rectifiers |
Country Status (4)
Country | Link |
---|---|
US (1) | US2441590A (en) |
FR (1) | FR940633A (en) |
GB (1) | GB599341A (en) |
NL (1) | NL73352C (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2584461A (en) * | 1949-06-14 | 1952-02-05 | Hazeltine Research Inc | Electrical crystal-contact device |
US2597734A (en) * | 1948-11-15 | 1952-05-20 | Hazeltine Research Inc | Electrical crystal contact device |
US2609427A (en) * | 1949-05-31 | 1952-09-02 | Rca Corp | Three-electrode semiconductor device |
US2615965A (en) * | 1948-07-24 | 1952-10-28 | Sylvania Electric Prod | Crystal amplifier device |
US2734102A (en) * | 1949-03-31 | 1956-02-07 | Jacques i | |
DE1186951B (en) * | 1959-05-06 | 1965-02-11 | Texas Instruments Inc | Method of manufacturing a hermetically sealed semiconductor device |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2704818A (en) * | 1947-04-24 | 1955-03-22 | Gen Electric | Asymmetrically conductive device |
US2708255A (en) * | 1949-06-18 | 1955-05-10 | Albert C Nolte | Minute metallic bodies |
US2675509A (en) * | 1949-07-26 | 1954-04-13 | Rca Corp | High-frequency response semiconductor device |
DE936758C (en) * | 1949-11-15 | 1955-12-22 | Rudolf Dr-Ing Rost | Crystal polyode |
US2861228A (en) * | 1953-05-29 | 1958-11-18 | Motorola Inc | Semi-conductor unit |
US2829992A (en) * | 1954-02-02 | 1958-04-08 | Hughes Aircraft Co | Fused junction semiconductor devices and method of making same |
US3078559A (en) * | 1959-04-13 | 1963-02-26 | Sylvania Electric Prod | Method for preparing semiconductor elements |
US3187403A (en) * | 1962-04-24 | 1965-06-08 | Burroughs Corp | Method of making semiconductor circuit elements |
US3120087A (en) * | 1962-12-28 | 1964-02-04 | Robert H Holloway | Method of mounting metallographic samples |
DK125217B (en) * | 1970-02-23 | 1973-01-15 | Struers Chem Labor | Abrasive or polishing blank with associated sample holder for use in grinding or polishing for micro-examination purposes. |
US4198788A (en) * | 1978-07-28 | 1980-04-22 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method of forming a sharp edge on an optical device |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE283186C (en) * | ||||
US1102184A (en) * | 1907-08-15 | 1914-06-30 | Browne Apparatus Company | Detector for wireless telegraphy. |
-
1944
- 1944-03-24 US US528009A patent/US2441590A/en not_active Expired - Lifetime
-
1945
- 1945-09-14 GB GB23834/45A patent/GB599341A/en not_active Expired
-
1946
- 1946-08-27 FR FR940633D patent/FR940633A/en not_active Expired
- 1946-10-02 NL NL127980A patent/NL73352C/xx active
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2615965A (en) * | 1948-07-24 | 1952-10-28 | Sylvania Electric Prod | Crystal amplifier device |
US2597734A (en) * | 1948-11-15 | 1952-05-20 | Hazeltine Research Inc | Electrical crystal contact device |
US2734102A (en) * | 1949-03-31 | 1956-02-07 | Jacques i | |
US2609427A (en) * | 1949-05-31 | 1952-09-02 | Rca Corp | Three-electrode semiconductor device |
US2584461A (en) * | 1949-06-14 | 1952-02-05 | Hazeltine Research Inc | Electrical crystal-contact device |
DE1186951B (en) * | 1959-05-06 | 1965-02-11 | Texas Instruments Inc | Method of manufacturing a hermetically sealed semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
US2441590A (en) | 1948-05-18 |
NL73352C (en) | 1953-10-15 |
FR940633A (en) | 1948-12-17 |
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