GB599341A - Improvements in electrical translating devices such as contact rectifiers - Google Patents

Improvements in electrical translating devices such as contact rectifiers

Info

Publication number
GB599341A
GB599341A GB23834/45A GB2383445A GB599341A GB 599341 A GB599341 A GB 599341A GB 23834/45 A GB23834/45 A GB 23834/45A GB 2383445 A GB2383445 A GB 2383445A GB 599341 A GB599341 A GB 599341A
Authority
GB
United Kingdom
Prior art keywords
grinding
silicon
lap
cemented
polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB23834/45A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB599341A publication Critical patent/GB599341A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting

Abstract

599,341. Grinding and polishing. WESTERN ELECTRIC CO., Inc. Sept. 14, 1945, No. 23834. Convention date, March 24. 1944. [Class 60] [Also in Group XL] Wedge shaped units of silicon of the form shown in Fig. 7 for use in crystal detectors are formed by grinding the surface of flat rectangular wafers of silicon. The wafers 2 are cemented into recesses in a chuck plate 3 at the desired angle. The chuck plate 3 is driven by shaft 4 which imparts both a rotary and an oscillatory movement relative to a grooved meta] lap 6 which is rotated at the bottom of a suitable bath 5, an abrasive such as boron carbide being used. After one face 12 has been formed on the silicon wedge the grinding lap 6 is by a polishing lap. The units are then removed und cemented into the chuck again in reversed position and the second face 12 is ground and then polished.
GB23834/45A 1944-03-24 1945-09-14 Improvements in electrical translating devices such as contact rectifiers Expired GB599341A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US528009A US2441590A (en) 1944-03-24 1944-03-24 Translating device

Publications (1)

Publication Number Publication Date
GB599341A true GB599341A (en) 1948-03-10

Family

ID=24103887

Family Applications (1)

Application Number Title Priority Date Filing Date
GB23834/45A Expired GB599341A (en) 1944-03-24 1945-09-14 Improvements in electrical translating devices such as contact rectifiers

Country Status (4)

Country Link
US (1) US2441590A (en)
FR (1) FR940633A (en)
GB (1) GB599341A (en)
NL (1) NL73352C (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2584461A (en) * 1949-06-14 1952-02-05 Hazeltine Research Inc Electrical crystal-contact device
US2597734A (en) * 1948-11-15 1952-05-20 Hazeltine Research Inc Electrical crystal contact device
US2609427A (en) * 1949-05-31 1952-09-02 Rca Corp Three-electrode semiconductor device
US2615965A (en) * 1948-07-24 1952-10-28 Sylvania Electric Prod Crystal amplifier device
US2734102A (en) * 1949-03-31 1956-02-07 Jacques i
DE1186951B (en) * 1959-05-06 1965-02-11 Texas Instruments Inc Method of manufacturing a hermetically sealed semiconductor device

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2704818A (en) * 1947-04-24 1955-03-22 Gen Electric Asymmetrically conductive device
US2708255A (en) * 1949-06-18 1955-05-10 Albert C Nolte Minute metallic bodies
US2675509A (en) * 1949-07-26 1954-04-13 Rca Corp High-frequency response semiconductor device
DE936758C (en) * 1949-11-15 1955-12-22 Rudolf Dr-Ing Rost Crystal polyode
US2861228A (en) * 1953-05-29 1958-11-18 Motorola Inc Semi-conductor unit
US2829992A (en) * 1954-02-02 1958-04-08 Hughes Aircraft Co Fused junction semiconductor devices and method of making same
US3078559A (en) * 1959-04-13 1963-02-26 Sylvania Electric Prod Method for preparing semiconductor elements
US3187403A (en) * 1962-04-24 1965-06-08 Burroughs Corp Method of making semiconductor circuit elements
US3120087A (en) * 1962-12-28 1964-02-04 Robert H Holloway Method of mounting metallographic samples
DK125217B (en) * 1970-02-23 1973-01-15 Struers Chem Labor Abrasive or polishing blank with associated sample holder for use in grinding or polishing for micro-examination purposes.
US4198788A (en) * 1978-07-28 1980-04-22 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of forming a sharp edge on an optical device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE283186C (en) *
US1102184A (en) * 1907-08-15 1914-06-30 Browne Apparatus Company Detector for wireless telegraphy.

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2615965A (en) * 1948-07-24 1952-10-28 Sylvania Electric Prod Crystal amplifier device
US2597734A (en) * 1948-11-15 1952-05-20 Hazeltine Research Inc Electrical crystal contact device
US2734102A (en) * 1949-03-31 1956-02-07 Jacques i
US2609427A (en) * 1949-05-31 1952-09-02 Rca Corp Three-electrode semiconductor device
US2584461A (en) * 1949-06-14 1952-02-05 Hazeltine Research Inc Electrical crystal-contact device
DE1186951B (en) * 1959-05-06 1965-02-11 Texas Instruments Inc Method of manufacturing a hermetically sealed semiconductor device

Also Published As

Publication number Publication date
US2441590A (en) 1948-05-18
NL73352C (en) 1953-10-15
FR940633A (en) 1948-12-17

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