DE69527529T2 - Siliziumhalbleiterdiode, ihr Schaltungsmodul und Struktur mit einem isolierendem Körper und Herstellungsverfahren dafür - Google Patents

Siliziumhalbleiterdiode, ihr Schaltungsmodul und Struktur mit einem isolierendem Körper und Herstellungsverfahren dafür

Info

Publication number
DE69527529T2
DE69527529T2 DE69527529T DE69527529T DE69527529T2 DE 69527529 T2 DE69527529 T2 DE 69527529T2 DE 69527529 T DE69527529 T DE 69527529T DE 69527529 T DE69527529 T DE 69527529T DE 69527529 T2 DE69527529 T2 DE 69527529T2
Authority
DE
Germany
Prior art keywords
manufacturing process
circuit module
insulating body
silicon semiconductor
semiconductor diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69527529T
Other languages
English (en)
Other versions
DE69527529D1 (de
Inventor
Chao-Chih Tai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zowie Technology Corp
Original Assignee
Zowie Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zowie Technology Corp filed Critical Zowie Technology Corp
Publication of DE69527529D1 publication Critical patent/DE69527529D1/de
Application granted granted Critical
Publication of DE69527529T2 publication Critical patent/DE69527529T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
DE69527529T 1995-09-12 1995-09-12 Siliziumhalbleiterdiode, ihr Schaltungsmodul und Struktur mit einem isolierendem Körper und Herstellungsverfahren dafür Expired - Fee Related DE69527529T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP95402057A EP0762494B1 (de) 1995-09-12 1995-09-12 Siliziumhalbleiterdiode, ihr Schaltungsmodul und Struktur mit einem isolierendem Körper und Herstellungsverfahren dafür

Publications (2)

Publication Number Publication Date
DE69527529D1 DE69527529D1 (de) 2002-08-29
DE69527529T2 true DE69527529T2 (de) 2002-12-12

Family

ID=8221524

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69527529T Expired - Fee Related DE69527529T2 (de) 1995-09-12 1995-09-12 Siliziumhalbleiterdiode, ihr Schaltungsmodul und Struktur mit einem isolierendem Körper und Herstellungsverfahren dafür

Country Status (2)

Country Link
EP (1) EP0762494B1 (de)
DE (1) DE69527529T2 (de)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1276210B (de) * 1961-08-31 1968-08-29 Siemens Ag Halbleiterbauelement
US3818584A (en) * 1967-09-06 1974-06-25 Tokyo Shibaura Electric Co Method for manufacturing a semiconductor apparatus
US4168960A (en) * 1978-04-18 1979-09-25 Westinghouse Electric Corp. Method of making a glass encapsulated diode

Also Published As

Publication number Publication date
DE69527529D1 (de) 2002-08-29
EP0762494B1 (de) 2002-07-24
EP0762494A1 (de) 1997-03-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee