DE1150357B - Vorrichtung zum Reinigen von Kristallen, insbesondere von Halbleitereinkristallen, durch Zonenschmelzen - Google Patents

Vorrichtung zum Reinigen von Kristallen, insbesondere von Halbleitereinkristallen, durch Zonenschmelzen

Info

Publication number
DE1150357B
DE1150357B DEJ18050A DEJ0018050A DE1150357B DE 1150357 B DE1150357 B DE 1150357B DE J18050 A DEJ18050 A DE J18050A DE J0018050 A DEJ0018050 A DE J0018050A DE 1150357 B DE1150357 B DE 1150357B
Authority
DE
Germany
Prior art keywords
zone
crystals
melting
seed crystal
cleaning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEJ18050A
Other languages
German (de)
English (en)
Inventor
Gerard Robert Gunther-Mohr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE1150357B publication Critical patent/DE1150357B/de
Pending legal-status Critical Current

Links

Classifications

    • D—TEXTILES; PAPER
    • D02—YARNS; MECHANICAL FINISHING OF YARNS OR ROPES; WARPING OR BEAMING
    • D02G—CRIMPING OR CURLING FIBRES, FILAMENTS, THREADS, OR YARNS; YARNS OR THREADS
    • D02G1/00—Producing crimped or curled fibres, filaments, yarns, or threads, giving them latent characteristics
    • D02G1/02—Producing crimped or curled fibres, filaments, yarns, or threads, giving them latent characteristics by twisting, fixing the twist and backtwisting, i.e. by imparting false twist
    • D02G1/0206—Producing crimped or curled fibres, filaments, yarns, or threads, giving them latent characteristics by twisting, fixing the twist and backtwisting, i.e. by imparting false twist by false-twisting
    • D02G1/0266—Producing crimped or curled fibres, filaments, yarns, or threads, giving them latent characteristics by twisting, fixing the twist and backtwisting, i.e. by imparting false twist by false-twisting false-twisting machines
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/074—Horizontal melt solidification
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/108—Including a solid member other than seed or product contacting the liquid [e.g., crucible, immersed heating element]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Textile Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DEJ18050A 1959-04-30 1960-04-30 Vorrichtung zum Reinigen von Kristallen, insbesondere von Halbleitereinkristallen, durch Zonenschmelzen Pending DE1150357B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US809957A US3020132A (en) 1959-04-30 1959-04-30 Single crystal refining

Publications (1)

Publication Number Publication Date
DE1150357B true DE1150357B (de) 1963-06-20

Family

ID=25202590

Family Applications (2)

Application Number Title Priority Date Filing Date
DEJ18050A Pending DE1150357B (de) 1959-04-30 1960-04-30 Vorrichtung zum Reinigen von Kristallen, insbesondere von Halbleitereinkristallen, durch Zonenschmelzen
DEJ22966A Pending DE1243145B (de) 1959-04-30 1960-04-30 Vorrichtung zum Zonenschmelzen von Kristallen, insbesondere von Halbleiterkristallen

Family Applications After (1)

Application Number Title Priority Date Filing Date
DEJ22966A Pending DE1243145B (de) 1959-04-30 1960-04-30 Vorrichtung zum Zonenschmelzen von Kristallen, insbesondere von Halbleiterkristallen

Country Status (4)

Country Link
US (1) US3020132A (xx)
DE (2) DE1150357B (xx)
GB (1) GB915732A (xx)
NL (2) NL112210C (xx)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3250842A (en) * 1963-01-15 1966-05-10 Atomic Energy Commission Electron beam zone refining
DE1644006A1 (de) * 1967-04-29 1970-04-02 Siemens Ag Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes,insbesondere Halbleiterstabes
US3485613A (en) * 1967-11-06 1969-12-23 Corning Glass Works Method of producing a vitreous body by crucibleless fluid zone treatment
US3651386A (en) * 1970-08-24 1972-03-21 Universal Oil Prod Co Pyropolymeric semiconducting organic-refractory oxide material
USRE28635E (en) * 1970-08-24 1975-12-02 Pyropolymeric semiconducting organic-refractory oxide material
JPS535867B2 (xx) * 1973-03-08 1978-03-02
US3926566A (en) * 1973-05-18 1975-12-16 Bicron Corp Processing alkali metal halide salts for growing into crystals in accordance with stockbarger process
US3884642A (en) * 1973-07-23 1975-05-20 Applied Materials Inc Radiantly heated crystal growing furnace
US4828445A (en) * 1982-06-14 1989-05-09 Giannuzzi Louis Single-piece pre-shaped wall anchor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT194444B (de) * 1953-02-26 1958-01-10 Siemens Ag Verfahren und Einrichtung zur Behandlung einer längserstreckten Halbleiterkristallanordnung
DE1032555B (de) * 1951-11-16 1958-06-19 Western Electric Co Verfahren und Vorrichtung zum Zonenschmelzen

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL89230C (xx) * 1952-12-17 1900-01-01

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1032555B (de) * 1951-11-16 1958-06-19 Western Electric Co Verfahren und Vorrichtung zum Zonenschmelzen
AT194444B (de) * 1953-02-26 1958-01-10 Siemens Ag Verfahren und Einrichtung zur Behandlung einer längserstreckten Halbleiterkristallanordnung

Also Published As

Publication number Publication date
DE1243145B (de) 1967-06-29
NL112210C (xx)
US3020132A (en) 1962-02-06
GB915732A (en) 1963-01-16
NL250835A (xx)

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