DE112022002604T5 - Halbleiterbauelement - Google Patents

Halbleiterbauelement Download PDF

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Publication number
DE112022002604T5
DE112022002604T5 DE112022002604.9T DE112022002604T DE112022002604T5 DE 112022002604 T5 DE112022002604 T5 DE 112022002604T5 DE 112022002604 T DE112022002604 T DE 112022002604T DE 112022002604 T5 DE112022002604 T5 DE 112022002604T5
Authority
DE
Germany
Prior art keywords
gate
source
interconnect
interconnection
trench
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112022002604.9T
Other languages
German (de)
English (en)
Inventor
Tomoaki Shinoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of DE112022002604T5 publication Critical patent/DE112022002604T5/de
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/43—Layouts of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
DE112022002604.9T 2021-06-14 2022-04-26 Halbleiterbauelement Pending DE112022002604T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021098851 2021-06-14
JP2021-098851 2021-06-14
PCT/JP2022/018821 WO2022264694A1 (ja) 2021-06-14 2022-04-26 半導体装置

Publications (1)

Publication Number Publication Date
DE112022002604T5 true DE112022002604T5 (de) 2024-03-14

Family

ID=84527103

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112022002604.9T Pending DE112022002604T5 (de) 2021-06-14 2022-04-26 Halbleiterbauelement

Country Status (5)

Country Link
US (1) US20240105835A1 (https=)
JP (1) JPWO2022264694A1 (https=)
CN (1) CN117480618A (https=)
DE (1) DE112022002604T5 (https=)
WO (1) WO2022264694A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102022105886A1 (de) * 2022-03-14 2023-09-14 Infineon Technologies Ag Halbleitervorrichtung mit makrozellen
JP2024130833A (ja) * 2023-03-15 2024-09-30 株式会社東芝 半導体装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018129378A (ja) 2017-02-07 2018-08-16 ローム株式会社 半導体装置および半導体装置の製造方法、ならびに、半導体ウエハ構造物

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014120656A (ja) * 2012-12-18 2014-06-30 Toshiba Corp 半導体装置
JP6219140B2 (ja) * 2013-11-22 2017-10-25 ルネサスエレクトロニクス株式会社 半導体装置
JP2016152357A (ja) * 2015-02-18 2016-08-22 株式会社東芝 半導体装置および半導体パッケージ
JP6666671B2 (ja) * 2015-08-24 2020-03-18 ローム株式会社 半導体装置
JP2019114643A (ja) * 2017-12-22 2019-07-11 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
DE102018114591B4 (de) * 2018-06-18 2021-09-02 Infineon Technologies Ag Transistorbauelement
JP7061954B2 (ja) * 2018-11-07 2022-05-02 三菱電機株式会社 半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018129378A (ja) 2017-02-07 2018-08-16 ローム株式会社 半導体装置および半導体装置の製造方法、ならびに、半導体ウエハ構造物

Also Published As

Publication number Publication date
JPWO2022264694A1 (https=) 2022-12-22
CN117480618A (zh) 2024-01-30
US20240105835A1 (en) 2024-03-28
WO2022264694A1 (ja) 2022-12-22

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R012 Request for examination validly filed
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0029410000

Ipc: H10D0064200000