DE112021005126B4 - Herstellungsverfahren für Silicium-Einkristall - Google Patents

Herstellungsverfahren für Silicium-Einkristall

Info

Publication number
DE112021005126B4
DE112021005126B4 DE112021005126.1T DE112021005126T DE112021005126B4 DE 112021005126 B4 DE112021005126 B4 DE 112021005126B4 DE 112021005126 T DE112021005126 T DE 112021005126T DE 112021005126 B4 DE112021005126 B4 DE 112021005126B4
Authority
DE
Germany
Prior art keywords
single crystal
flow rate
dopant
silicon single
furnace
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE112021005126.1T
Other languages
German (de)
English (en)
Other versions
DE112021005126T5 (de
Inventor
Shogo Kobayashi
Norihito Fukatsu
Takahiro KANEHARA
Hitomi Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Publication of DE112021005126T5 publication Critical patent/DE112021005126T5/de
Application granted granted Critical
Publication of DE112021005126B4 publication Critical patent/DE112021005126B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
DE112021005126.1T 2020-09-29 2021-09-21 Herstellungsverfahren für Silicium-Einkristall Active DE112021005126B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-163638 2020-09-29
JP2020163638 2020-09-29
PCT/JP2021/034487 WO2022071014A1 (ja) 2020-09-29 2021-09-21 シリコン単結晶の製造方法

Publications (2)

Publication Number Publication Date
DE112021005126T5 DE112021005126T5 (de) 2023-07-20
DE112021005126B4 true DE112021005126B4 (de) 2025-10-02

Family

ID=80950338

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112021005126.1T Active DE112021005126B4 (de) 2020-09-29 2021-09-21 Herstellungsverfahren für Silicium-Einkristall

Country Status (6)

Country Link
US (2) US12351937B2 (https=)
JP (1) JP7567929B2 (https=)
CN (1) CN116406433A (https=)
DE (1) DE112021005126B4 (https=)
TW (1) TWI784689B (https=)
WO (1) WO2022071014A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7692880B2 (ja) * 2022-07-29 2025-06-16 グローバルウェーハズ・ジャパン株式会社 シリコン単結晶インゴットの評価方法
CN116949554B (zh) * 2023-09-05 2023-11-21 鄂尔多斯市中成榆能源有限公司 直拉单晶硅的生产方法及生产系统

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5129986A (en) * 1989-11-16 1992-07-14 Shin-Etsu Handotai Co., Ltd. Method for controlling specific resistance of single crystal and an apparatus therefor
CN105970284A (zh) * 2016-05-30 2016-09-28 上海超硅半导体有限公司 一种p型单晶硅片及其制造方法
DE112015003573T5 (de) * 2014-08-29 2017-04-20 Shin-Etsu Handotai Co., Ltd. Verfahren zum Steuern des spezifischen Widerstands und N-Silicium-Einkristall

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2550739B2 (ja) 1990-02-23 1996-11-06 住友金属工業株式会社 結晶成長方法
JP4380204B2 (ja) * 2003-04-10 2009-12-09 株式会社Ｓｕｍｃｏ シリコン単結晶及び単結晶育成方法
JP4631717B2 (ja) * 2006-01-19 2011-02-16 株式会社Sumco Ｉｇｂｔ用シリコン単結晶ウェーハ及びｉｇｂｔ用シリコン単結晶ウェーハの製造方法
WO2009025336A1 (ja) * 2007-08-21 2009-02-26 Sumco Corporation Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法
JP5595318B2 (ja) 2011-03-29 2014-09-24 グローバルウェーハズ・ジャパン株式会社 単結晶引上装置及び単結晶引き上げ方法
EP2697412B1 (en) 2011-04-14 2018-07-25 GTAT IP Holding LLC Method for producing silicon ingot having axially uniform doping
JP5646589B2 (ja) * 2012-12-27 2014-12-24 グローバルウェーハズ・ジャパン株式会社 シリコン単結晶の引き上げ方法
JP6015634B2 (ja) 2013-11-22 2016-10-26 信越半導体株式会社 シリコン単結晶の製造方法
JP6299543B2 (ja) * 2014-09-18 2018-03-28 信越半導体株式会社 抵抗率制御方法及び追加ドーパント投入装置
JP6304125B2 (ja) 2015-05-21 2018-04-04 信越半導体株式会社 シリコン単結晶の軸方向の抵抗率制御方法
KR101674819B1 (ko) 2015-08-12 2016-11-09 주식회사 엘지실트론 단결정 성장 방법
US20180087179A1 (en) * 2016-09-28 2018-03-29 Corner Star Limited Single crystal silicon ingots having doped axial regions with different resistivity and methods for producing such ingots
JP6862916B2 (ja) 2017-02-28 2021-04-21 株式会社Sumco シリコン単結晶インゴットの製造方法およびシリコン単結晶育成装置
CN114606567B (zh) * 2017-04-25 2024-10-01 胜高股份有限公司 n型单晶硅的制造方法、n型单晶硅的锭、硅晶片及外延硅晶片

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5129986A (en) * 1989-11-16 1992-07-14 Shin-Etsu Handotai Co., Ltd. Method for controlling specific resistance of single crystal and an apparatus therefor
DE112015003573T5 (de) * 2014-08-29 2017-04-20 Shin-Etsu Handotai Co., Ltd. Verfahren zum Steuern des spezifischen Widerstands und N-Silicium-Einkristall
CN105970284A (zh) * 2016-05-30 2016-09-28 上海超硅半导体有限公司 一种p型单晶硅片及其制造方法

Also Published As

Publication number Publication date
US20250389045A1 (en) 2025-12-25
US12351937B2 (en) 2025-07-08
DE112021005126T5 (de) 2023-07-20
WO2022071014A1 (ja) 2022-04-07
TWI784689B (zh) 2022-11-21
TW202217085A (zh) 2022-05-01
CN116406433A (zh) 2023-07-07
JP7567929B2 (ja) 2024-10-16
US20230340691A1 (en) 2023-10-26
JPWO2022071014A1 (https=) 2022-04-07

Similar Documents

Publication Publication Date Title
DE112008000893B4 (de) Verfahren und Vorrichtung zum Herstellen von Siliziumeinkristallen und Siliziumeinkristallingot
DE10392291B4 (de) Energie-effizientes Verfahren zum Züchten von polykristallinem Silicium
DE69207454T2 (de) Verfahren und Vorrichtung für die Herstellung eines Silizium-Einkristalls
DE112015003573B4 (de) Verfahren zum Steuern des spezifischen Widerstands und N-Silicium-Einkristall
DE112014002133B4 (de) Herstellungsverfahren für einen Einkristall, Silicium-Einkristall, Verfahren zur Herstellung eines Siliciumwafers, Herstellungsverfahren für einen Silicium-Epitaxialwafer, sowie Silicium-Epitaxialwafer
DE112018002156B4 (de) Verfahren zur Herstellung eines Silicium-Einkristalls vom n-Typ, Silicium-Einkristall-Ingot vom n-Typ, Siliciumwafer und epitaktischer Siliciumwafer
DE69019472T2 (de) Verfahren zur Steuerung des spezifischen Widerstandes eines Einkristalles.
DE69717531T2 (de) Verfahren zur Herstellung III-V Verbindungshalbleiterkristallen
DE102017217540B4 (de) Herstellungsverfahren für einkristallines Silicium und einkristallines Silicium
DE112013005434B4 (de) Verfahren zum Herstellen von Silicium-Einkristallen
DE112018001046B4 (de) Verfahren zur Herstellung eines Siliziumeinkristall-Ingots und Siliziumeinkristall-Wachstumsvorrichtung
EP0021385A1 (de) Verfahren zur Herstellung von Siliciumstäben
EP1936012B1 (de) Verfahren zum Herstellen kristallisierten Siliciums sowie kristallisiertes Silicium
DE112017001292B4 (de) Verfahren zur Herstellung eines Silicium-Einkristalls
DE112017007122B4 (de) Verfahren zur Herstellung von Silizium-Monokristall, Strömungsausrichtungselement und Monokristall-Ziehvorrichtung
DE112021005126B4 (de) Herstellungsverfahren für Silicium-Einkristall
DE112018001044T5 (de) Verfahren zum Herstellen von Silizium-Einkristallbarren, und Silizium-Einkristall-Barren
DE112020005441T5 (de) Verfahren und vorrichtung zum ziehen eines einkristalls
DE112018002171B4 (de) Verfahren zur Herstellung eines Silicium-Einkristalls vom n-Typ
DE19703620B4 (de) Einkristall-Ziehvorrichtung
EP4060097B1 (de) Vorrichtung und verfahren zur herstellung eines dotierten monokristallinen stabes aus silicium
DE19922736C2 (de) Vorrichtung zum Herstellen eines Einkristalls
DE10393635B4 (de) Verfahren zur Herstellung eines Siliziumwafers
DE102004004536B4 (de) Verfahren zur Herstellung eines Siliciumeinkristalls
DE60036197T2 (de) Verfahren und vorrichtung zur herstellung von einkristallen aus siliciumcarbid

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R016 Response to examination communication
R016 Response to examination communication
R018 Grant decision by examination section/examining division