TWI784689B - 矽單結晶的製造方法 - Google Patents
矽單結晶的製造方法 Download PDFInfo
- Publication number
- TWI784689B TWI784689B TW110131825A TW110131825A TWI784689B TW I784689 B TWI784689 B TW I784689B TW 110131825 A TW110131825 A TW 110131825A TW 110131825 A TW110131825 A TW 110131825A TW I784689 B TWI784689 B TW I784689B
- Authority
- TW
- Taiwan
- Prior art keywords
- single crystal
- silicon single
- flow rate
- pulling
- dopant
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 173
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 156
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 156
- 239000010703 silicon Substances 0.000 title claims abstract description 156
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 239000002019 doping agent Substances 0.000 claims abstract description 125
- 230000008018 melting Effects 0.000 claims abstract description 7
- 238000002844 melting Methods 0.000 claims abstract description 7
- 239000007789 gas Substances 0.000 claims description 66
- 238000000034 method Methods 0.000 claims description 24
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 238000002425 crystallisation Methods 0.000 claims description 4
- 230000008025 crystallization Effects 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 239000002994 raw material Substances 0.000 abstract description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 30
- 239000010453 quartz Substances 0.000 description 28
- 239000007788 liquid Substances 0.000 description 13
- 239000000155 melt Substances 0.000 description 12
- 230000007423 decrease Effects 0.000 description 10
- 125000004429 atom Chemical group 0.000 description 9
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000004804 winding Methods 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 238000005204 segregation Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000012774 insulation material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 102220248506 rs104894625 Human genes 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020-163638 | 2020-09-29 | ||
| JP2020163638 | 2020-09-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202217085A TW202217085A (zh) | 2022-05-01 |
| TWI784689B true TWI784689B (zh) | 2022-11-21 |
Family
ID=80950338
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW110131825A TWI784689B (zh) | 2020-09-29 | 2021-08-27 | 矽單結晶的製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US12351937B2 (https=) |
| JP (1) | JP7567929B2 (https=) |
| CN (1) | CN116406433A (https=) |
| DE (1) | DE112021005126B4 (https=) |
| TW (1) | TWI784689B (https=) |
| WO (1) | WO2022071014A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7692880B2 (ja) * | 2022-07-29 | 2025-06-16 | グローバルウェーハズ・ジャパン株式会社 | シリコン単結晶インゴットの評価方法 |
| CN116949554B (zh) * | 2023-09-05 | 2023-11-21 | 鄂尔多斯市中成榆能源有限公司 | 直拉单晶硅的生产方法及生产系统 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009025336A1 (ja) * | 2007-08-21 | 2009-02-26 | Sumco Corporation | Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法 |
| JP2014511146A (ja) * | 2011-04-14 | 2014-05-12 | ジーティー アドヴァンスト シーズィー， エルエルシー | 均一な複数のドーパントを有するシリコンインゴット並びにそれを生成するための方法及び装置 |
| JP2014125402A (ja) * | 2012-12-27 | 2014-07-07 | Globalwafers Japan Co Ltd | シリコン単結晶の引き上げ方法 |
| JP2016060667A (ja) * | 2014-09-18 | 2016-04-25 | 信越半導体株式会社 | 抵抗率制御方法、追加ドーパント投入装置、並びに、ｎ型シリコン単結晶 |
| JP2018525308A (ja) * | 2015-08-12 | 2018-09-06 | エスケー シルトロン カンパニー リミテッド | 単結晶成長方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0777995B2 (ja) * | 1989-11-16 | 1995-08-23 | 信越半導体株式会社 | 単結晶の比抵抗コントロール方法 |
| JP2550739B2 (ja) | 1990-02-23 | 1996-11-06 | 住友金属工業株式会社 | 結晶成長方法 |
| JP4380204B2 (ja) * | 2003-04-10 | 2009-12-09 | 株式会社Ｓｕｍｃｏ | シリコン単結晶及び単結晶育成方法 |
| JP4631717B2 (ja) * | 2006-01-19 | 2011-02-16 | 株式会社Sumco | Ｉｇｂｔ用シリコン単結晶ウェーハ及びｉｇｂｔ用シリコン単結晶ウェーハの製造方法 |
| JP5595318B2 (ja) | 2011-03-29 | 2014-09-24 | グローバルウェーハズ・ジャパン株式会社 | 単結晶引上装置及び単結晶引き上げ方法 |
| JP6015634B2 (ja) | 2013-11-22 | 2016-10-26 | 信越半導体株式会社 | シリコン単結晶の製造方法 |
| JP6222013B2 (ja) * | 2014-08-29 | 2017-11-01 | 信越半導体株式会社 | 抵抗率制御方法 |
| JP6304125B2 (ja) | 2015-05-21 | 2018-04-04 | 信越半導体株式会社 | シリコン単結晶の軸方向の抵抗率制御方法 |
| CN105970284B (zh) * | 2016-05-30 | 2019-08-16 | 上海超硅半导体有限公司 | 一种p型单晶硅片及其制造方法 |
| US20180087179A1 (en) * | 2016-09-28 | 2018-03-29 | Corner Star Limited | Single crystal silicon ingots having doped axial regions with different resistivity and methods for producing such ingots |
| JP6862916B2 (ja) | 2017-02-28 | 2021-04-21 | 株式会社Sumco | シリコン単結晶インゴットの製造方法およびシリコン単結晶育成装置 |
| CN114606567B (zh) * | 2017-04-25 | 2024-10-01 | 胜高股份有限公司 | n型单晶硅的制造方法、n型单晶硅的锭、硅晶片及外延硅晶片 |
-
2021
- 2021-08-27 TW TW110131825A patent/TWI784689B/zh active
- 2021-09-21 US US18/026,975 patent/US12351937B2/en active Active
- 2021-09-21 WO PCT/JP2021/034487 patent/WO2022071014A1/ja not_active Ceased
- 2021-09-21 DE DE112021005126.1T patent/DE112021005126B4/de active Active
- 2021-09-21 JP JP2022553849A patent/JP7567929B2/ja active Active
- 2021-09-21 CN CN202180066679.2A patent/CN116406433A/zh active Pending
-
2025
- 2025-07-02 US US19/257,911 patent/US20250389045A1/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009025336A1 (ja) * | 2007-08-21 | 2009-02-26 | Sumco Corporation | Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法 |
| JP2014511146A (ja) * | 2011-04-14 | 2014-05-12 | ジーティー アドヴァンスト シーズィー， エルエルシー | 均一な複数のドーパントを有するシリコンインゴット並びにそれを生成するための方法及び装置 |
| JP2014125402A (ja) * | 2012-12-27 | 2014-07-07 | Globalwafers Japan Co Ltd | シリコン単結晶の引き上げ方法 |
| JP2016060667A (ja) * | 2014-09-18 | 2016-04-25 | 信越半導体株式会社 | 抵抗率制御方法、追加ドーパント投入装置、並びに、ｎ型シリコン単結晶 |
| JP2018525308A (ja) * | 2015-08-12 | 2018-09-06 | エスケー シルトロン カンパニー リミテッド | 単結晶成長方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20250389045A1 (en) | 2025-12-25 |
| US12351937B2 (en) | 2025-07-08 |
| DE112021005126T5 (de) | 2023-07-20 |
| WO2022071014A1 (ja) | 2022-04-07 |
| DE112021005126B4 (de) | 2025-10-02 |
| TW202217085A (zh) | 2022-05-01 |
| CN116406433A (zh) | 2023-07-07 |
| JP7567929B2 (ja) | 2024-10-16 |
| US20230340691A1 (en) | 2023-10-26 |
| JPWO2022071014A1 (https=) | 2022-04-07 |
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