DE112021004170T5 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung Download PDF

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Publication number
DE112021004170T5
DE112021004170T5 DE112021004170.3T DE112021004170T DE112021004170T5 DE 112021004170 T5 DE112021004170 T5 DE 112021004170T5 DE 112021004170 T DE112021004170 T DE 112021004170T DE 112021004170 T5 DE112021004170 T5 DE 112021004170T5
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Prior art keywords
metal layer
oxide
semiconductor device
ceramic
weight
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Pending
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DE112021004170.3T
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German (de)
English (en)
Inventor
Seiichi Takahashi
Masayoshi Shimoda
Makoto Isozaki
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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Publication of DE112021004170T5 publication Critical patent/DE112021004170T5/de
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    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
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DE112021004170.3T 2021-04-28 2021-11-01 Halbleitervorrichtung Pending DE112021004170T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-075538 2021-04-28
JP2021075538 2021-04-28
PCT/JP2021/040282 WO2022230220A1 (ja) 2021-04-28 2021-11-01 半導体装置

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7644899B2 (ja) * 2021-03-24 2025-03-13 富士電機株式会社 半導体装置
DE102022134661A1 (de) * 2022-12-23 2024-07-04 Rogers Germany Gmbh Verfahren zur Herstellung eines Metall-Keramik-Substrats, Keramikelement sowie Metallschicht für ein solches Verfahren und Metall-Keramik-Substrat hergestellt mit einem solchen Verfahren

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017147327A (ja) 2016-02-17 2017-08-24 富士電機株式会社 半導体装置及び製造方法

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58145669A (ja) 1982-02-18 1983-08-30 株式会社明電舎 セラミツクスと銅の接合方法
US4500383A (en) 1982-02-18 1985-02-19 Kabushiki Kaisha Meidensha Process for bonding copper or copper-chromium alloy to ceramics, and bonded articles of ceramics and copper or copper-chromium alloy
JPS5939779A (ja) 1982-08-25 1984-03-05 住友特殊金属株式会社 セラミックスと金属の結合方法
JPS6483512A (en) 1987-09-24 1989-03-29 Showa Denko Kk Low soda alumina
JPH04293290A (ja) 1991-03-20 1992-10-16 Kyocera Corp 平滑セラミック基板およびその製造方法
JPH05330958A (ja) 1992-05-27 1993-12-14 Okuno Chem Ind Co Ltd メタライズ下地層形成用ガラス組成物
JP3495052B2 (ja) 1992-07-15 2004-02-09 株式会社東芝 メタライズ体およびその製造方法
JPH06172021A (ja) 1992-12-04 1994-06-21 Sumitomo Metal Mining Co Ltd 高電圧厚膜回路用アルミナ基板
JP3036367B2 (ja) 1994-08-19 2000-04-24 住友金属工業株式会社 アルミナ磁器組成物
JP3127754B2 (ja) 1995-01-19 2001-01-29 富士電機株式会社 半導体装置
JP3176815B2 (ja) * 1995-01-19 2001-06-18 富士電機株式会社 半導体装置用基板
JP2000031325A (ja) 1998-07-13 2000-01-28 Hitachi Ltd 半導体パワーモジュール及びこれを用いたインバータ装置
JP3833410B2 (ja) 1999-03-26 2006-10-11 株式会社東芝 セラミックス回路基板
JP3929660B2 (ja) 1999-10-29 2007-06-13 京セラ株式会社 絶縁性アルミナ質基板およびアルミナ質銅貼回路基板
JP2004047913A (ja) 2002-07-16 2004-02-12 Sumitomo Metal Electronics Devices Inc 半導体モジュール用基板
DE102005007373B4 (de) 2005-02-17 2013-05-29 Infineon Technologies Ag Leistungshalbleiterbaugruppe
JP2006298703A (ja) 2005-04-21 2006-11-02 Nishimura Togyo Kk 陶磁器熱放射性固体物
JP2006199584A (ja) 2006-02-17 2006-08-03 Toshiba Corp セラミックス回路基板の製造方法
JP5473407B2 (ja) 2008-06-27 2014-04-16 京セラ株式会社 セラミック基板、放熱基板および電子装置
KR101757648B1 (ko) 2009-04-03 2017-07-14 가부시키가이샤 스미토모 긴조쿠 엘렉트로 디바이스 세라믹스 소결체 및 이를 사용한 반도체장치용 기판
JP5697363B2 (ja) 2010-05-20 2015-04-08 Ｎｇｋエレクトロデバイス株式会社 セラミック焼結体およびその製造方法および光反射体および発光素子収納用パッケージ
JP5972875B2 (ja) 2011-07-14 2016-08-17 株式会社東芝 セラミックス回路基板
JP6129738B2 (ja) 2011-07-14 2017-05-17 株式会社東芝 セラミックス回路基板
JP5910166B2 (ja) 2012-02-29 2016-04-27 三菱マテリアル株式会社 パワーモジュール用基板の製造方法
JP6096094B2 (ja) 2013-10-28 2017-03-15 日本発條株式会社 積層体、絶縁性冷却板、パワーモジュールおよび積層体の製造方法
JP6213993B2 (ja) 2014-01-21 2017-10-18 Ｎｇｋエレクトロデバイス株式会社 電子部品実装用基板
JP2015224151A (ja) 2014-05-27 2015-12-14 Ｎｇｋエレクトロデバイス株式会社 Ｃｕ／セラミック基板
JP7192451B2 (ja) 2018-01-25 2022-12-20 三菱マテリアル株式会社 銅／セラミックス接合体、絶縁回路基板、及び、銅／セラミックス接合体の製造方法、絶縁回路基板の製造方法
JP6963185B2 (ja) 2018-08-22 2021-11-05 日本電信電話株式会社 帯域割当装置、帯域割当方法及び帯域割当プログラム
WO2020044593A1 (ja) * 2018-08-28 2020-03-05 三菱マテリアル株式会社 銅／セラミックス接合体、絶縁回路基板、及び、銅／セラミックス接合体の製造方法、及び、絶縁回路基板の製造方法
WO2020044590A1 (ja) 2018-08-28 2020-03-05 三菱マテリアル株式会社 銅／セラミックス接合体、絶縁回路基板、及び、銅／セラミックス接合体の製造方法、及び、絶縁回路基板の製造方法
JP7062087B2 (ja) * 2018-12-06 2022-05-02 日本碍子株式会社 セラミックス焼結体及び半導体装置用基板
JP7347047B2 (ja) * 2019-09-12 2023-09-20 富士電機株式会社 半導体装置
JP6808801B2 (ja) * 2019-10-08 2021-01-06 Ｎｇｋエレクトロデバイス株式会社 Ｃｕ／セラミック基板

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017147327A (ja) 2016-02-17 2017-08-24 富士電機株式会社 半導体装置及び製造方法

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