DE112019004418T5 - Verfahren zur auswertung der kohlenstoffkonzentration einer siliziumprobe, verfahren zur auswertung eines siliziumwaferherstellungsprozesses, verfahren zur herstellung eines siliziumwafers und verfahren zur herstellung eines siliziumeinkristallingots - Google Patents
Verfahren zur auswertung der kohlenstoffkonzentration einer siliziumprobe, verfahren zur auswertung eines siliziumwaferherstellungsprozesses, verfahren zur herstellung eines siliziumwafers und verfahren zur herstellung eines siliziumeinkristallingots Download PDFInfo
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- DE112019004418T5 DE112019004418T5 DE112019004418.4T DE112019004418T DE112019004418T5 DE 112019004418 T5 DE112019004418 T5 DE 112019004418T5 DE 112019004418 T DE112019004418 T DE 112019004418T DE 112019004418 T5 DE112019004418 T5 DE 112019004418T5
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- silicon
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 282
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 281
- 239000010703 silicon Substances 0.000 title claims abstract description 280
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 167
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 164
- 238000000034 method Methods 0.000 title claims abstract description 99
- 238000004519 manufacturing process Methods 0.000 title claims description 92
- 238000011156 evaluation Methods 0.000 claims abstract description 102
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 38
- LVXIMLLVSSOUNN-UHFFFAOYSA-N fluorine;nitric acid Chemical compound [F].O[N+]([O-])=O LVXIMLLVSSOUNN-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000013078 crystal Substances 0.000 claims description 46
- 238000001773 deep-level transient spectroscopy Methods 0.000 claims description 42
- 102100031920 Dihydrolipoyllysine-residue succinyltransferase component of 2-oxoglutarate dehydrogenase complex, mitochondrial Human genes 0.000 claims description 41
- 101000992065 Homo sapiens Dihydrolipoyllysine-residue succinyltransferase component of 2-oxoglutarate dehydrogenase complex, mitochondrial Proteins 0.000 claims description 41
- 238000011109 contamination Methods 0.000 claims description 32
- 238000011282 treatment Methods 0.000 claims description 29
- 238000010894 electron beam technology Methods 0.000 claims description 14
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract description 15
- 229910017604 nitric acid Inorganic materials 0.000 abstract description 15
- 239000000523 sample Substances 0.000 description 117
- 235000012431 wafers Nutrition 0.000 description 89
- 238000005259 measurement Methods 0.000 description 28
- 239000007789 gas Substances 0.000 description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 15
- 239000001301 oxygen Substances 0.000 description 15
- 229910052760 oxygen Inorganic materials 0.000 description 15
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 14
- 238000011088 calibration curve Methods 0.000 description 12
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- 238000002156 mixing Methods 0.000 description 6
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000002796 luminescence method Methods 0.000 description 4
- 230000002441 reversible effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 238000005424 photoluminescence Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 230000001052 transient effect Effects 0.000 description 3
- 229940095676 wafer product Drugs 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2648—Characterising semiconductor materials
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Immunology (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Electrochemistry (AREA)
- Pathology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-164532 | 2018-09-03 | ||
| JP2018164532A JP6645545B1 (ja) | 2018-09-03 | 2018-09-03 | シリコン試料の炭素濃度評価方法、シリコンウェーハ製造工程の評価方法、シリコンウェーハの製造方法およびシリコン単結晶インゴットの製造方法 |
| PCT/JP2019/034034 WO2020050145A1 (ja) | 2018-09-03 | 2019-08-30 | シリコン試料の炭素濃度評価方法、シリコンウェーハ製造工程の評価方法、シリコンウェーハの製造方法およびシリコン単結晶インゴットの製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE112019004418T5 true DE112019004418T5 (de) | 2021-07-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112019004418.4T Pending DE112019004418T5 (de) | 2018-09-03 | 2019-08-30 | Verfahren zur auswertung der kohlenstoffkonzentration einer siliziumprobe, verfahren zur auswertung eines siliziumwaferherstellungsprozesses, verfahren zur herstellung eines siliziumwafers und verfahren zur herstellung eines siliziumeinkristallingots |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP6645545B1 (ja) |
| KR (1) | KR102513720B1 (ja) |
| CN (1) | CN112640071B (ja) |
| DE (1) | DE112019004418T5 (ja) |
| TW (1) | TWI707993B (ja) |
| WO (1) | WO2020050145A1 (ja) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7363762B2 (ja) * | 2020-12-28 | 2023-10-18 | 株式会社Sumco | シリコン試料の炭素濃度評価方法、シリコンウェーハ製造工程の評価方法、シリコンウェーハの製造方法およびシリコン単結晶インゴットの製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017191800A (ja) | 2016-04-11 | 2017-10-19 | 株式会社Sumco | シリコン試料の炭素濃度測定方法、シリコン単結晶インゴットの製造方法、シリコン単結晶インゴットおよびシリコンウェーハ |
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| EP1918985B1 (en) * | 2006-10-31 | 2010-05-26 | S.O.I.TEC. Silicon on Insulator Technologies S.A. | Methods for characterizing defects on silicon surfaces, etching composition for silicon surfaces and process of treating silicon surfaces with the etching composition |
| JP5459053B2 (ja) * | 2010-05-11 | 2014-04-02 | 信越半導体株式会社 | シリコン単結晶の不純物評価方法 |
| JP2012079932A (ja) * | 2010-10-01 | 2012-04-19 | Shin Etsu Handotai Co Ltd | シリコン単結晶の結晶欠陥の評価方法 |
| JP5949303B2 (ja) * | 2012-08-09 | 2016-07-06 | 株式会社Sumco | エピタキシャル成長炉の評価方法およびエピタキシャルウェーハの製造方法 |
| JP6224703B2 (ja) * | 2013-05-30 | 2017-11-01 | 京セラ株式会社 | シリコンインゴットの製造方法およびシリコンインゴット |
| CN104120491A (zh) * | 2014-08-14 | 2014-10-29 | 无锡尚品太阳能电力科技有限公司 | 多晶硅铸锭的制作工艺 |
| JP6484762B2 (ja) * | 2016-07-06 | 2019-03-13 | 株式会社トクヤマ | 単結晶シリコン板状体およびその製造方法 |
| JP6531729B2 (ja) * | 2016-07-19 | 2019-06-19 | 株式会社Sumco | シリコン試料の炭素濃度評価方法、シリコンウェーハ製造工程の評価方法、シリコンウェーハの製造方法およびシリコン単結晶インゴットの製造方法 |
| JP6569628B2 (ja) * | 2016-09-05 | 2019-09-04 | 株式会社Sumco | 劣化評価方法およびシリコン材料の製造方法 |
| JP6631498B2 (ja) * | 2016-12-26 | 2020-01-15 | 株式会社Sumco | シリコン材料製造工程の評価方法およびシリコン材料の製造方法 |
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2018
- 2018-09-03 JP JP2018164532A patent/JP6645545B1/ja active Active
-
2019
- 2019-08-30 KR KR1020217008290A patent/KR102513720B1/ko active IP Right Grant
- 2019-08-30 DE DE112019004418.4T patent/DE112019004418T5/de active Pending
- 2019-08-30 TW TW108131266A patent/TWI707993B/zh active
- 2019-08-30 WO PCT/JP2019/034034 patent/WO2020050145A1/ja active Application Filing
- 2019-08-30 CN CN201980057224.7A patent/CN112640071B/zh active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017191800A (ja) | 2016-04-11 | 2017-10-19 | 株式会社Sumco | シリコン試料の炭素濃度測定方法、シリコン単結晶インゴットの製造方法、シリコン単結晶インゴットおよびシリコンウェーハ |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102513720B1 (ko) | 2023-03-23 |
| JP2020038873A (ja) | 2020-03-12 |
| KR20210043682A (ko) | 2021-04-21 |
| WO2020050145A1 (ja) | 2020-03-12 |
| TWI707993B (zh) | 2020-10-21 |
| CN112640071A (zh) | 2021-04-09 |
| TW202018135A (zh) | 2020-05-16 |
| CN112640071B (zh) | 2023-09-15 |
| JP6645545B1 (ja) | 2020-02-14 |
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