DE112019004015A5 - Optoelektronisches Halbleiterbauteil und Herstellungsverfahren für optoelektronisches Halbleiterbauteile - Google Patents

Optoelektronisches Halbleiterbauteil und Herstellungsverfahren für optoelektronisches Halbleiterbauteile Download PDF

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Publication number
DE112019004015A5
DE112019004015A5 DE112019004015.4T DE112019004015T DE112019004015A5 DE 112019004015 A5 DE112019004015 A5 DE 112019004015A5 DE 112019004015 T DE112019004015 T DE 112019004015T DE 112019004015 A5 DE112019004015 A5 DE 112019004015A5
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Prior art keywords
semiconductor component
optoelectronic semiconductor
manufacturing process
optoelectronic
component
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Application number
DE112019004015.4T
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DE112019004015B4 (de
Inventor
Christian Leirer
Michael Schumann
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Osram Oled GmbH
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Osram Oled GmbH
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)
DE112019004015.4T 2018-08-10 2019-08-07 Optoelektronisches Halbleiterbauteil und Herstellungsverfahren für optoelektronisches Halbleiterbauteile Active DE112019004015B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102018119538.9 2018-08-10
DE102018119538.9A DE102018119538A1 (de) 2018-08-10 2018-08-10 Optoelektronisches halbleiterbauteil und herstellungsverfahren für optoelektronische halbleiterbauteile
PCT/EP2019/071263 WO2020030714A1 (de) 2018-08-10 2019-08-07 Optoelektronisches halbleiterbauteil und herstellungsverfahren für optoelektronische halbleiterbauteile

Publications (2)

Publication Number Publication Date
DE112019004015A5 true DE112019004015A5 (de) 2021-04-29
DE112019004015B4 DE112019004015B4 (de) 2023-01-19

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
DE102018119538.9A Withdrawn DE102018119538A1 (de) 2018-08-10 2018-08-10 Optoelektronisches halbleiterbauteil und herstellungsverfahren für optoelektronische halbleiterbauteile
DE112019004015.4T Active DE112019004015B4 (de) 2018-08-10 2019-08-07 Optoelektronisches Halbleiterbauteil und Herstellungsverfahren für optoelektronisches Halbleiterbauteile

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DE102018119538.9A Withdrawn DE102018119538A1 (de) 2018-08-10 2018-08-10 Optoelektronisches halbleiterbauteil und herstellungsverfahren für optoelektronische halbleiterbauteile

Country Status (3)

Country Link
US (1) US12068281B2 (de)
DE (2) DE102018119538A1 (de)
WO (1) WO2020030714A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110504386B (zh) * 2019-08-29 2022-04-22 京东方科技集团股份有限公司 一种显示基板及其制备方法、显示装置
US11313741B2 (en) * 2019-12-11 2022-04-26 Apple Inc. Packaging technologies for temperature sensing in health care products
CN113036016B (zh) * 2019-12-24 2022-10-11 群创光电股份有限公司 电子装置
DE102020104396A1 (de) 2020-02-19 2021-08-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer halbleiterchip, halbleiterbauteil und verfahren zur herstellung eines optoelektronischen halbleiterchips
DE102021127919A1 (de) 2021-10-27 2023-04-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Herstellungsverfahren und optoelektronisches halbleiterbauteil
DE112023000363A5 (de) * 2022-02-17 2024-09-05 Ams-Osram International Gmbh Herstellungsverfahren, optoelektronisches halbleiterbauteil und träger

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KR100598032B1 (ko) * 2003-12-03 2006-07-07 삼성전자주식회사 테이프 배선 기판, 그를 이용한 반도체 칩 패키지 및 그를이용한 디스플레이패널 어셈블리
KR100639701B1 (ko) * 2004-11-17 2006-10-30 삼성전자주식회사 멀티칩 패키지
US7993972B2 (en) * 2008-03-04 2011-08-09 Stats Chippac, Ltd. Wafer level die integration and method therefor
US8237259B2 (en) 2007-06-13 2012-08-07 Infineon Technologies Ag Embedded chip package
DE102007046520A1 (de) 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Lichtemittierendes Flächenelement und Verfahren zum Herstellen eines lichtemittierenden Flächenelementes
US8796706B2 (en) * 2009-07-03 2014-08-05 Seoul Semiconductor Co., Ltd. Light emitting diode package
JP5662277B2 (ja) * 2011-08-08 2015-01-28 株式会社東芝 半導体発光装置及び発光モジュール
DE102012102847A1 (de) * 2012-04-02 2013-10-02 Osram Opto Semiconductors Gmbh Licht emittierendes Halbleiterbauelement und Verfahren zur Herstellung eines Licht emittierenden Halbleiterbauelements
DE102012112302A1 (de) 2012-12-14 2014-06-18 Osram Opto Semiconductors Gmbh Anzeigevorrichtung und Verfahren zur Herstellung einer Anzeigevorrichtung
KR102108087B1 (ko) * 2013-07-11 2020-05-08 삼성전자주식회사 반도체 패키지
CN103943652B (zh) * 2013-08-29 2017-02-08 上海天马微电子有限公司 一种oled像素及其显示装置的制作方法
US20150098191A1 (en) * 2013-10-06 2015-04-09 Gerald Ho Kim Silicon Heat-Dissipation Package For Compact Electronic Devices
GB201418810D0 (en) * 2014-10-22 2014-12-03 Infiniled Ltd Display
US10847691B2 (en) * 2014-12-11 2020-11-24 Luminus, Inc. LED flip chip structures with extended contact pads formed by sintering silver
KR20160122022A (ko) * 2015-04-13 2016-10-21 에스케이하이닉스 주식회사 인터포저를 갖는 반도체 패키지 및 제조 방법
JP6330788B2 (ja) 2015-11-18 2018-05-30 株式会社村田製作所 電子デバイス
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DE102016121099A1 (de) 2016-11-04 2018-05-09 Osram Opto Semiconductors Gmbh Herstellung von strahlungsemittierenden halbleiterbauelementen
US10303013B2 (en) * 2016-11-17 2019-05-28 Apple Inc. Pixel array antialiasing to accommodate curved display edges

Also Published As

Publication number Publication date
DE112019004015B4 (de) 2023-01-19
US20210265317A1 (en) 2021-08-26
US12068281B2 (en) 2024-08-20
DE102018119538A1 (de) 2020-02-13
WO2020030714A1 (de) 2020-02-13

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