DE112018005496A5 - Strahlungsemittierendes halbleiterbauelement und verfahren zur herstellung von strahlungsemittierenden halbleiterbauelementen - Google Patents

Strahlungsemittierendes halbleiterbauelement und verfahren zur herstellung von strahlungsemittierenden halbleiterbauelementen Download PDF

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Publication number
DE112018005496A5
DE112018005496A5 DE112018005496.9T DE112018005496T DE112018005496A5 DE 112018005496 A5 DE112018005496 A5 DE 112018005496A5 DE 112018005496 T DE112018005496 T DE 112018005496T DE 112018005496 A5 DE112018005496 A5 DE 112018005496A5
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Prior art keywords
emitting semiconductor
radiation
manufacturing
semiconductor component
semiconductor components
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DE112018005496.9T
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DE112018005496B4 (de
Inventor
Roland Heinrich Enzmann
Hubert Halbritter
Martin Rudolf Behringer
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Osram Oled GmbH
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Osram Oled GmbH
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
DE112018005496.9T 2017-09-26 2018-09-20 Strahlungsemittierendes halbleiterbauelement und verfahren zur herstellung von strahlungsemittierenden halbleiterbauelementen Active DE112018005496B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102017122325.8A DE102017122325A1 (de) 2017-09-26 2017-09-26 Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung von strahlungsemittierenden Halbleiterbauelementen
DE102017122325.8 2017-09-26
PCT/EP2018/075488 WO2019063412A1 (de) 2017-09-26 2018-09-20 Strahlungsemittierendes halbleiterbauelement und verfahren zur herstellung von strahlungsemittierenden halbleiterbauelementen

Publications (2)

Publication Number Publication Date
DE112018005496A5 true DE112018005496A5 (de) 2020-10-08
DE112018005496B4 DE112018005496B4 (de) 2024-03-21

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Family Applications (3)

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DE102017122325.8A Withdrawn DE102017122325A1 (de) 2017-09-26 2017-09-26 Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung von strahlungsemittierenden Halbleiterbauelementen
DE112018008290.3T Active DE112018008290B4 (de) 2017-09-26 2018-09-20 Strahlungsemittierendes halbleiterbauelement
DE112018005496.9T Active DE112018005496B4 (de) 2017-09-26 2018-09-20 Strahlungsemittierendes halbleiterbauelement und verfahren zur herstellung von strahlungsemittierenden halbleiterbauelementen

Family Applications Before (2)

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DE102017122325.8A Withdrawn DE102017122325A1 (de) 2017-09-26 2017-09-26 Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung von strahlungsemittierenden Halbleiterbauelementen
DE112018008290.3T Active DE112018008290B4 (de) 2017-09-26 2018-09-20 Strahlungsemittierendes halbleiterbauelement

Country Status (5)

Country Link
US (3) US11316084B2 (de)
JP (2) JP7052019B2 (de)
CN (2) CN117276451A (de)
DE (3) DE102017122325A1 (de)
WO (1) WO2019063412A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017122325A1 (de) * 2017-09-26 2019-03-28 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung von strahlungsemittierenden Halbleiterbauelementen
JP7438476B2 (ja) * 2019-08-20 2024-02-27 日亜化学工業株式会社 半導体レーザ装置及びその製造方法
CN117096236B (zh) * 2023-10-18 2024-01-26 南昌凯捷半导体科技有限公司 一种共振腔结构红光led芯片及其制作方法

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Also Published As

Publication number Publication date
JP2020535634A (ja) 2020-12-03
US20240055568A1 (en) 2024-02-15
US11316084B2 (en) 2022-04-26
CN117276451A (zh) 2023-12-22
JP7052019B2 (ja) 2022-04-11
DE102017122325A1 (de) 2019-03-28
CN111542933B (zh) 2023-10-31
US20220190217A1 (en) 2022-06-16
US11848406B2 (en) 2023-12-19
DE112018005496B4 (de) 2024-03-21
WO2019063412A1 (de) 2019-04-04
US20200227602A1 (en) 2020-07-16
CN111542933A (zh) 2020-08-14
DE112018008290B4 (de) 2024-09-19
JP7318048B2 (ja) 2023-07-31
JP2022088580A (ja) 2022-06-14

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