DE112019000537A5 - Optoelektronisches halbleiterbauteil und verfahren zur herstellung von optoelektronischen halbleiterbauteilen - Google Patents

Optoelektronisches halbleiterbauteil und verfahren zur herstellung von optoelektronischen halbleiterbauteilen Download PDF

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Publication number
DE112019000537A5
DE112019000537A5 DE112019000537.5T DE112019000537T DE112019000537A5 DE 112019000537 A5 DE112019000537 A5 DE 112019000537A5 DE 112019000537 T DE112019000537 T DE 112019000537T DE 112019000537 A5 DE112019000537 A5 DE 112019000537A5
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Prior art keywords
semiconductor components
optoelectronic semiconductor
manufacturing
components
manufacturing optoelectronic
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Pending
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DE112019000537.5T
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English (en)
Inventor
Matthias Hien
Matthias Goldbach
Michael Zitzlsperger
Ludwig Peyker
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Osram Oled GmbH
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Osram Oled GmbH
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Publication of DE112019000537A5 publication Critical patent/DE112019000537A5/de
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/25—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of a plurality of high density interconnect connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/041—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00
    • H01L25/042—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00 the devices being arranged next to each other
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
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    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241—Disposition
    • H01L2224/24135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/24137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241—Disposition
    • H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/24153—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate
    • H01L2224/24175—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being metallic
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12043—Photo diode
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    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
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    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
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    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
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    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Led Device Packages (AREA)
DE112019000537.5T 2018-01-26 2019-01-23 Optoelektronisches halbleiterbauteil und verfahren zur herstellung von optoelektronischen halbleiterbauteilen Pending DE112019000537A5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102018101813.4A DE102018101813A1 (de) 2018-01-26 2018-01-26 Optoelektronisches halbleiterbauteil und verfahren zur herstellung von optoelektronischen halbleiterbauteilen
DE102018101813.4 2018-01-26
PCT/EP2019/051608 WO2019145350A1 (de) 2018-01-26 2019-01-23 Optoelektronisches halbleiterbauteil und verfahren zur herstellung von optoelektronischen halbleiterbauteilen

Publications (1)

Publication Number Publication Date
DE112019000537A5 true DE112019000537A5 (de) 2020-10-29

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DE102018101813.4A Withdrawn DE102018101813A1 (de) 2018-01-26 2018-01-26 Optoelektronisches halbleiterbauteil und verfahren zur herstellung von optoelektronischen halbleiterbauteilen
DE112019000537.5T Pending DE112019000537A5 (de) 2018-01-26 2019-01-23 Optoelektronisches halbleiterbauteil und verfahren zur herstellung von optoelektronischen halbleiterbauteilen

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DE102018101813.4A Withdrawn DE102018101813A1 (de) 2018-01-26 2018-01-26 Optoelektronisches halbleiterbauteil und verfahren zur herstellung von optoelektronischen halbleiterbauteilen

Country Status (4)

Country Link
US (1) US11462500B2 (de)
CN (1) CN111727512A (de)
DE (2) DE102018101813A1 (de)
WO (1) WO2019145350A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018111175A1 (de) 2018-05-09 2019-11-14 Osram Opto Semiconductors Gmbh Pixel, Multipixel-LED-Modul und Herstellungsverfahren
DE102020117207A1 (de) * 2020-06-30 2021-12-30 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches bauelementegehäuse und verfahren
DE102020004863A1 (de) 2020-08-10 2022-02-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches halbleiterbauteil und herstellungsverfahren
DE102021113592A1 (de) 2021-05-26 2022-12-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches halbleiterbauteil und paneel
US11869816B2 (en) * 2021-07-26 2024-01-09 Excellence Opto. Inc. LED package with multiple test pads and parallel circuit elements
DE102021119709A1 (de) 2021-07-29 2023-02-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Anordnung, verfahren zur montage eines optoelektronischen bauteils und optoelektronisches bauteil
DE102022102493A1 (de) 2022-02-02 2023-08-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches bauelementgehäuse und verfahren
DE102022114582A1 (de) 2022-06-09 2023-12-14 Ams-Osram International Gmbh Optoelektronisches bauelement und verfahren zum herstellen eines optoelektronischen bauelements

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Publication number Priority date Publication date Assignee Title
US6583444B2 (en) * 1997-02-18 2003-06-24 Tessera, Inc. Semiconductor packages having light-sensitive chips
JP4359195B2 (ja) * 2004-06-11 2009-11-04 株式会社東芝 半導体発光装置及びその製造方法並びに半導体発光ユニット
KR20090067180A (ko) * 2006-10-17 2009-06-24 씨. 아이. 카세이 가부시기가이샤 상하전극형 발광 다이오드용 패키지 집합체와 그것을 이용한 발광장치의 제조방법
EP2081238A1 (de) 2006-11-08 2009-07-22 C. I. Kasei Company, Limited Leuchtbauelement und verfahren zu seiner herstellung
DE102007030129A1 (de) * 2007-06-29 2009-01-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente und optoelektronisches Bauelement
DE102009015963A1 (de) 2009-04-02 2010-10-07 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
US20120061700A1 (en) * 2010-09-09 2012-03-15 Andreas Eder Method and system for providing a reliable light emitting diode semiconductor device
WO2012049854A1 (ja) * 2010-10-14 2012-04-19 パナソニック株式会社 発光装置及びこれを用いた面光源装置
JP2012119376A (ja) * 2010-11-29 2012-06-21 Toshiba Corp Ｌｅｄパッケージ
WO2012117974A1 (ja) * 2011-02-28 2012-09-07 日亜化学工業株式会社 発光装置
DE102011056706B4 (de) * 2011-12-20 2016-12-15 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von optoelektronischen Halbleiterbauteilen, Anordnung und optoelektronisches Halbleiterbauteil
US20150207050A1 (en) * 2012-05-08 2015-07-23 Fuji Machine Mfg Co., Ltd. Semiconductor package and manufacturing method thereof
US9059379B2 (en) * 2012-10-29 2015-06-16 Advanced Semiconductor Engineering, Inc. Light-emitting semiconductor packages and related methods
JP2017103365A (ja) * 2015-12-02 2017-06-08 新光電気工業株式会社 リードフレーム及び電子部品装置とそれらの製造方法

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DE102018101813A1 (de) 2019-08-01
CN111727512A (zh) 2020-09-29
US11462500B2 (en) 2022-10-04
US20200402943A1 (en) 2020-12-24
WO2019145350A1 (de) 2019-08-01

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