DE112019005944A5 - Optoelektronisches halbleiterlaserbauelement und verfahren zur herstellung eines optoelektronischen halbleiterlaserbauelements - Google Patents
Optoelektronisches halbleiterlaserbauelement und verfahren zur herstellung eines optoelektronischen halbleiterlaserbauelements Download PDFInfo
- Publication number
- DE112019005944A5 DE112019005944A5 DE112019005944.0T DE112019005944T DE112019005944A5 DE 112019005944 A5 DE112019005944 A5 DE 112019005944A5 DE 112019005944 T DE112019005944 T DE 112019005944T DE 112019005944 A5 DE112019005944 A5 DE 112019005944A5
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor laser
- optoelectronic semiconductor
- laser component
- manufacturing
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0087—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for illuminating phosphorescent or fluorescent materials, e.g. using optical arrangements specifically adapted for guiding or shaping laser beams illuminating these materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02253—Out-coupling of light using lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102018130540.0 | 2018-11-30 | ||
DE102018130540.0A DE102018130540A1 (de) | 2018-11-30 | 2018-11-30 | Optoelektronisches halbleiterlaserbauelement und verfahren zur herstellung eines optoelektronischen halbleiterlaserbauelements |
PCT/EP2019/081631 WO2020109051A1 (de) | 2018-11-30 | 2019-11-18 | Optoelektronisches halbleiterlaserbauelement und verfahren zur herstellung eines optoelektronischen halbleiterlaserbauelements |
Publications (1)
Publication Number | Publication Date |
---|---|
DE112019005944A5 true DE112019005944A5 (de) | 2021-08-12 |
Family
ID=68654450
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102018130540.0A Withdrawn DE102018130540A1 (de) | 2018-11-30 | 2018-11-30 | Optoelektronisches halbleiterlaserbauelement und verfahren zur herstellung eines optoelektronischen halbleiterlaserbauelements |
DE112019005944.0T Withdrawn DE112019005944A5 (de) | 2018-11-30 | 2019-11-18 | Optoelektronisches halbleiterlaserbauelement und verfahren zur herstellung eines optoelektronischen halbleiterlaserbauelements |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102018130540.0A Withdrawn DE102018130540A1 (de) | 2018-11-30 | 2018-11-30 | Optoelektronisches halbleiterlaserbauelement und verfahren zur herstellung eines optoelektronischen halbleiterlaserbauelements |
Country Status (3)
Country | Link |
---|---|
US (1) | US20220013980A1 (de) |
DE (2) | DE102018130540A1 (de) |
WO (1) | WO2020109051A1 (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102022106938A1 (de) * | 2022-03-24 | 2023-09-28 | Ams-Osram International Gmbh | Gestapelte laseranordnung und verfahren zum erzeugen derselben |
JP2024018682A (ja) * | 2022-07-29 | 2024-02-08 | 日亜化学工業株式会社 | 光源装置、及び半導体素子 |
DE102022127066A1 (de) | 2022-10-17 | 2024-04-18 | Ams-Osram International Gmbh | Optoelektronisches modul |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6636538B1 (en) * | 1999-03-29 | 2003-10-21 | Cutting Edge Optronics, Inc. | Laser diode packaging |
US20080056314A1 (en) * | 2006-08-31 | 2008-03-06 | Northrop Grumman Corporation | High-power laser-diode package system |
DE102009040834B4 (de) * | 2009-09-09 | 2013-10-31 | Jenoptik Laser Gmbh | Vorrichtung zum Schutz eines kantenemittierenden Laserdiodenelementes |
JP2011151310A (ja) * | 2010-01-25 | 2011-08-04 | Renesas Electronics Corp | 窒化物系半導体発光素子、および、窒化物系半導体発光素子をパッケージに搭載した発光素子 |
US9025635B2 (en) * | 2011-01-24 | 2015-05-05 | Soraa Laser Diode, Inc. | Laser package having multiple emitters configured on a support member |
JP6005440B2 (ja) * | 2011-08-22 | 2016-10-12 | エルジー イノテック カンパニー リミテッド | 発光素子パッケージ及びこれを含むライトユニット |
DE102013216526A1 (de) * | 2013-08-21 | 2015-02-26 | Osram Opto Semiconductors Gmbh | Laserbauelement |
DE102014119390A1 (de) * | 2014-12-22 | 2016-06-23 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
JP6564206B2 (ja) * | 2015-03-09 | 2019-08-21 | スタンレー電気株式会社 | 発光装置 |
CN209029679U (zh) * | 2017-06-23 | 2019-06-25 | 业纳激光有限公司 | 具有壳体的二极管激光器以及一种用于对表面进行均匀照明的装置 |
-
2018
- 2018-11-30 DE DE102018130540.0A patent/DE102018130540A1/de not_active Withdrawn
-
2019
- 2019-11-18 DE DE112019005944.0T patent/DE112019005944A5/de not_active Withdrawn
- 2019-11-18 US US17/297,858 patent/US20220013980A1/en active Pending
- 2019-11-18 WO PCT/EP2019/081631 patent/WO2020109051A1/de active Application Filing
Also Published As
Publication number | Publication date |
---|---|
DE102018130540A1 (de) | 2020-06-04 |
WO2020109051A1 (de) | 2020-06-04 |
US20220013980A1 (en) | 2022-01-13 |
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Legal Events
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R012 | Request for examination validly filed | ||
R016 | Response to examination communication | ||
R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |