DE112017003525A5 - Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips - Google Patents

Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips Download PDF

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Publication number
DE112017003525A5
DE112017003525A5 DE112017003525.2T DE112017003525T DE112017003525A5 DE 112017003525 A5 DE112017003525 A5 DE 112017003525A5 DE 112017003525 T DE112017003525 T DE 112017003525T DE 112017003525 A5 DE112017003525 A5 DE 112017003525A5
Authority
DE
Germany
Prior art keywords
semiconductor chip
optoelectronic semiconductor
producing
optoelectronic
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112017003525.2T
Other languages
English (en)
Inventor
Dominik Scholz
Alexander F. Pfeuffer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of DE112017003525A5 publication Critical patent/DE112017003525A5/de
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)
DE112017003525.2T 2016-07-13 2017-07-12 Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips Pending DE112017003525A5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102016112857.0 2016-07-13
DE102016112857.0A DE102016112857A1 (de) 2016-07-13 2016-07-13 Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
PCT/EP2017/067605 WO2018011298A1 (de) 2016-07-13 2017-07-12 Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips

Publications (1)

Publication Number Publication Date
DE112017003525A5 true DE112017003525A5 (de) 2019-03-28

Family

ID=59325310

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102016112857.0A Withdrawn DE102016112857A1 (de) 2016-07-13 2016-07-13 Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
DE112017003525.2T Pending DE112017003525A5 (de) 2016-07-13 2017-07-12 Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102016112857.0A Withdrawn DE102016112857A1 (de) 2016-07-13 2016-07-13 Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips

Country Status (4)

Country Link
US (1) US11316068B2 (de)
CN (1) CN109478583B (de)
DE (2) DE102016112857A1 (de)
WO (1) WO2018011298A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6942589B2 (ja) * 2017-09-27 2021-09-29 旭化成株式会社 半導体発光装置および紫外線発光モジュール
DE102019105402A1 (de) * 2019-03-04 2020-09-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender halbleiterchip, strahlungsemittierendes halbleiterbauelement und scheinwerfer

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4845405A (en) * 1986-05-14 1989-07-04 Sanyo Electric Co., Ltd. Monolithic LED display
JP2004363279A (ja) 2003-06-04 2004-12-24 Sony Corp 光電変換装置の製造方法、並びにその製造に用いる疑似ウェーハの製造方法
TWI264094B (en) * 2005-02-22 2006-10-11 Phoenix Prec Technology Corp Package structure with chip embedded in substrate
JP5128518B2 (ja) * 2009-02-24 2013-01-23 株式会社沖データ 表示装置
EP3062343B1 (de) * 2010-02-22 2022-08-17 Swiss Technology Enterprise GmbH Verfahren zum herstellen eines halbleitermoduls
US8535961B1 (en) * 2010-12-09 2013-09-17 Amkor Technology, Inc. Light emitting diode (LED) package and method
US8597986B2 (en) * 2011-09-01 2013-12-03 Taiwan Semiconductor Manufacturing Co., Ltd. System in package and method of fabricating same
US20130153856A1 (en) * 2011-12-15 2013-06-20 U.S. Government as represented by the Secretary of the Amry Infrared led device with isolation and method of making
JP5683507B2 (ja) * 2012-01-30 2015-03-11 株式会社沖データ 発光デバイス及びその製造方法
CN102832331B (zh) * 2012-08-24 2014-12-10 江阴长电先进封装有限公司 一种圆片级led封装方法
DE102012109594A1 (de) * 2012-10-09 2014-04-10 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
DE102012112302A1 (de) * 2012-12-14 2014-06-18 Osram Opto Semiconductors Gmbh Anzeigevorrichtung und Verfahren zur Herstellung einer Anzeigevorrichtung
KR101490799B1 (ko) * 2013-05-21 2015-02-09 주식회사 아모센스 웨이퍼레벨 패키지 구조체, 이를 이용한 ｌｅｄ 및 이의 제조방법
CN103311261B (zh) * 2013-05-24 2016-02-17 安徽三安光电有限公司 集成led发光器件及其制作方法
DE102016100351B4 (de) 2016-01-11 2023-07-06 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement, Leuchtvorrichtung und Autoscheinwerfer

Also Published As

Publication number Publication date
CN109478583A (zh) 2019-03-15
US11316068B2 (en) 2022-04-26
DE102016112857A1 (de) 2018-01-18
CN109478583B (zh) 2022-04-15
US20190252577A1 (en) 2019-08-15
WO2018011298A1 (de) 2018-01-18

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