DE112018001450A5 - Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung - Google Patents

Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung Download PDF

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Publication number
DE112018001450A5
DE112018001450A5 DE112018001450.9T DE112018001450T DE112018001450A5 DE 112018001450 A5 DE112018001450 A5 DE 112018001450A5 DE 112018001450 T DE112018001450 T DE 112018001450T DE 112018001450 A5 DE112018001450 A5 DE 112018001450A5
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DE
Germany
Prior art keywords
production
semiconductor chip
optoelectronic semiconductor
optoelectronic
chip
Prior art date
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Application number
DE112018001450.9T
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English (en)
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DE112018001450B4 (de
Inventor
Adrian Stefan Avramescu
Tansen Varghese
Martin Strassburg
Hans-Jürgen Lugauer
Sönke Fündling
Jana Hartmann
Frederik Steib
Andreas Waag
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
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Publication of DE112018001450A5 publication Critical patent/DE112018001450A5/de
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Publication of DE112018001450B4 publication Critical patent/DE112018001450B4/de
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
DE112018001450.9T 2017-03-20 2018-03-16 Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung Active DE112018001450B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102017105943.1A DE102017105943A1 (de) 2017-03-20 2017-03-20 Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
DE102017105943.1 2017-03-20
PCT/EP2018/056654 WO2018172205A1 (de) 2017-03-20 2018-03-16 Optoelektronischer halbleiterchip und verfahren zu dessen herstellung

Publications (2)

Publication Number Publication Date
DE112018001450A5 true DE112018001450A5 (de) 2019-12-12
DE112018001450B4 DE112018001450B4 (de) 2022-09-01

Family

ID=61750101

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102017105943.1A Withdrawn DE102017105943A1 (de) 2017-03-20 2017-03-20 Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
DE112018001450.9T Active DE112018001450B4 (de) 2017-03-20 2018-03-16 Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102017105943.1A Withdrawn DE102017105943A1 (de) 2017-03-20 2017-03-20 Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung

Country Status (3)

Country Link
US (1) US11069835B2 (de)
DE (2) DE102017105943A1 (de)
WO (1) WO2018172205A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11195973B1 (en) * 2019-05-17 2021-12-07 Facebook Technologies, Llc III-nitride micro-LEDs on semi-polar oriented GaN
US11175447B1 (en) 2019-08-13 2021-11-16 Facebook Technologies, Llc Waveguide in-coupling using polarized light emitting diodes
WO2023030857A1 (en) * 2021-08-30 2023-03-09 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor device and production method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8237151B2 (en) * 2009-01-09 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Diode-based devices and methods for making the same
DE102012101718A1 (de) 2012-03-01 2013-09-05 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
KR102099193B1 (ko) 2013-09-27 2020-04-09 인텔 코포레이션 실리콘 핀들 상에서의 ｌｅｄ 구조체들의 형성

Also Published As

Publication number Publication date
DE102017105943A1 (de) 2018-09-20
US11069835B2 (en) 2021-07-20
DE112018001450B4 (de) 2022-09-01
US20200028029A1 (en) 2020-01-23
WO2018172205A1 (de) 2018-09-27

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