DE112015002800A5 - Oberflächenmontierbares Halbleiterbauelement und Verfahren zu dessen Herstellung - Google Patents
Oberflächenmontierbares Halbleiterbauelement und Verfahren zu dessen Herstellung Download PDFInfo
- Publication number
- DE112015002800A5 DE112015002800A5 DE112015002800.5T DE112015002800T DE112015002800A5 DE 112015002800 A5 DE112015002800 A5 DE 112015002800A5 DE 112015002800 T DE112015002800 T DE 112015002800T DE 112015002800 A5 DE112015002800 A5 DE 112015002800A5
- Authority
- DE
- Germany
- Prior art keywords
- making
- semiconductor device
- same
- surface mount
- mount semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/12—Overvoltage protection resistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102014108368.7A DE102014108368A1 (de) | 2014-06-13 | 2014-06-13 | Oberflächenmontierbares Halbleiterbauelement und Verfahren zu dessen Herstellung |
DE102014108368.7 | 2014-06-13 | ||
PCT/EP2015/062850 WO2015189216A1 (de) | 2014-06-13 | 2015-06-09 | Oberflächenmontierbares halbleiterbauelement und verfahren zu dessen herstellung |
Publications (1)
Publication Number | Publication Date |
---|---|
DE112015002800A5 true DE112015002800A5 (de) | 2017-02-23 |
Family
ID=53476837
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102014108368.7A Withdrawn DE102014108368A1 (de) | 2014-06-13 | 2014-06-13 | Oberflächenmontierbares Halbleiterbauelement und Verfahren zu dessen Herstellung |
DE112015002800.5T Withdrawn DE112015002800A5 (de) | 2014-06-13 | 2015-06-09 | Oberflächenmontierbares Halbleiterbauelement und Verfahren zu dessen Herstellung |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102014108368.7A Withdrawn DE102014108368A1 (de) | 2014-06-13 | 2014-06-13 | Oberflächenmontierbares Halbleiterbauelement und Verfahren zu dessen Herstellung |
Country Status (4)
Country | Link |
---|---|
US (1) | US20170148966A1 (de) |
CN (1) | CN106663659B (de) |
DE (2) | DE102014108368A1 (de) |
WO (1) | WO2015189216A1 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102015101143A1 (de) | 2015-01-27 | 2016-07-28 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Verfahren zu dessen Herstellung |
DE102015107586B4 (de) | 2015-05-13 | 2023-10-26 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung optoelektronischer Bauelemente und oberflächenmontierbares optoelektronisches Bauelement |
DE102015107588B4 (de) | 2015-05-13 | 2023-08-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung optoelektronischer Bauelemente und oberflächenmontierbares optoelektronisches Bauelement |
DE102015109852A1 (de) | 2015-06-19 | 2016-12-22 | Osram Opto Semiconductors Gmbh | Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode |
US10797209B2 (en) * | 2016-02-05 | 2020-10-06 | Maven Optronics Co., Ltd. | Light emitting device with beam shaping structure and manufacturing method of the same |
JP6447557B2 (ja) * | 2016-03-24 | 2019-01-09 | 日亜化学工業株式会社 | 発光装置の製造方法 |
DE102016111059A1 (de) | 2016-06-16 | 2017-12-21 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von optoelektronischen Halbleiterbauelementen und optoelektronischen Modulen sowie optoelektronisches Halbleiterbauelement und optoelektronisches Modul |
DE102017116050A1 (de) * | 2017-07-17 | 2019-01-17 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Bauteils und optoelektronisches Bauteil |
JP6916525B2 (ja) * | 2018-02-06 | 2021-08-11 | 株式会社ブイ・テクノロジー | Ledディスプレイの製造方法 |
DE102018109542B4 (de) | 2018-04-20 | 2022-08-04 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Licht emittierendes bauelement und verfahren zur herstellung eines licht emittierenden bauelements |
DE102018124751B4 (de) * | 2018-10-08 | 2023-11-02 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauteil und Verfahren zur Herstellung eines optoelektronischen Bauteils |
DE102018128896A1 (de) * | 2018-11-16 | 2020-05-20 | Osram Opto Semiconductors Gmbh | Halbleiterchip mit einem inneren Kontaktelement und zwei äusseren Kontaktelementen und Halbleiterbauelement |
DE102019114169A1 (de) * | 2019-05-27 | 2020-12-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches halbleiterbauelement mit verbindungsbereichen und verfahren zur herstellung des optoelektronischen halbleiterbauelements |
WO2021137762A1 (en) * | 2019-12-30 | 2021-07-08 | Ams Sensors Asia Pte. Ltd. | A method of manufacturing a plurality of optoelectronic modules |
CN111640835B (zh) * | 2020-06-09 | 2022-03-15 | 佛山市国星光电股份有限公司 | 一种发光芯片及发光模组 |
DE102022102090A1 (de) | 2022-01-28 | 2023-08-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronische vorrichtung und verfahren zur herstellung einer optoelektronischen vorrichtung |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0921577A4 (de) * | 1997-01-31 | 2007-10-31 | Matsushita Electric Ind Co Ltd | Lichtemittierendes bauelement; halbleiter lichtemittierende vorrichtung, und deren herstellungsverfahren |
JP3910171B2 (ja) * | 2003-02-18 | 2007-04-25 | シャープ株式会社 | 半導体発光装置、その製造方法および電子撮像装置 |
US20040188696A1 (en) * | 2003-03-28 | 2004-09-30 | Gelcore, Llc | LED power package |
JP2005079329A (ja) * | 2003-08-29 | 2005-03-24 | Stanley Electric Co Ltd | 表面実装型発光ダイオード |
US20050082965A1 (en) * | 2003-10-16 | 2005-04-21 | Chiao-Chiang Huang | LED with good heat-dissipating capability |
JP2006206721A (ja) * | 2005-01-27 | 2006-08-10 | Kansai Electric Power Co Inc:The | 高耐熱合成高分子化合物及びこれで被覆した高耐電圧半導体装置 |
TWI244228B (en) * | 2005-02-03 | 2005-11-21 | United Epitaxy Co Ltd | Light emitting device and manufacture method thereof |
KR100780176B1 (ko) * | 2005-11-25 | 2007-11-27 | 삼성전기주식회사 | 측면 방출 발광다이오드 패키지 |
DE102008006757A1 (de) * | 2008-01-30 | 2009-08-06 | Osram Opto Semiconductors Gmbh | Oberflächenmontierbares Bauelement |
JP2010161139A (ja) * | 2009-01-07 | 2010-07-22 | Toshiba Corp | 発光装置 |
US9093293B2 (en) * | 2009-04-06 | 2015-07-28 | Cree, Inc. | High voltage low current surface emitting light emitting diode |
TWI411143B (en) * | 2009-06-26 | 2013-10-01 | Led package structure with a plurality of standby pads for increasing wire-bonding yield and method for manufacturing the same | |
DE102009058796A1 (de) * | 2009-12-18 | 2011-06-22 | OSRAM Opto Semiconductors GmbH, 93055 | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
US8525213B2 (en) * | 2010-03-30 | 2013-09-03 | Lg Innotek Co., Ltd. | Light emitting device having multiple cavities and light unit having the same |
DE102010024545B4 (de) * | 2010-06-22 | 2022-01-13 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements |
KR101618029B1 (ko) * | 2010-12-06 | 2016-05-09 | 삼성전자주식회사 | 발광 소자 패키지 및 그 제조방법 |
US20120261689A1 (en) * | 2011-04-13 | 2012-10-18 | Bernd Karl Appelt | Semiconductor device packages and related methods |
JP2013197309A (ja) * | 2012-03-19 | 2013-09-30 | Toshiba Corp | 発光装置 |
DE102012207772A1 (de) * | 2012-05-10 | 2013-11-14 | Osram Opto Semiconductors Gmbh | Varistorpaste, elektronische bauelementevorrichtung, verfahren zum herstellen einer elektronischen bauelementevorrichtung und verfahren zum herstellen eines geometrisch flexiblen varistors |
DE102012104494A1 (de) * | 2012-05-24 | 2013-11-28 | Epcos Ag | Leuchtdiodenvorrichtung |
JP5888132B2 (ja) * | 2012-06-08 | 2016-03-16 | 豊田合成株式会社 | 発光装置の製造方法 |
JP6209874B2 (ja) * | 2012-08-31 | 2017-10-11 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
JP2014078678A (ja) * | 2012-09-18 | 2014-05-01 | Toyoda Gosei Co Ltd | 半導体発光装置の製造方法 |
-
2014
- 2014-06-13 DE DE102014108368.7A patent/DE102014108368A1/de not_active Withdrawn
-
2015
- 2015-06-09 US US15/318,660 patent/US20170148966A1/en not_active Abandoned
- 2015-06-09 CN CN201580031722.6A patent/CN106663659B/zh not_active Expired - Fee Related
- 2015-06-09 WO PCT/EP2015/062850 patent/WO2015189216A1/de active Application Filing
- 2015-06-09 DE DE112015002800.5T patent/DE112015002800A5/de not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
DE102014108368A1 (de) | 2015-12-17 |
US20170148966A1 (en) | 2017-05-25 |
CN106663659A (zh) | 2017-05-10 |
WO2015189216A1 (de) | 2015-12-17 |
CN106663659B (zh) | 2019-12-20 |
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