DE112017000947T5 - Verbindungshalbleitervorrichtung und herstellungsverfahren für dieverbindungshalbleitervorrichtung - Google Patents
Verbindungshalbleitervorrichtung und herstellungsverfahren für dieverbindungshalbleitervorrichtung Download PDFInfo
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- DE112017000947T5 DE112017000947T5 DE112017000947.2T DE112017000947T DE112017000947T5 DE 112017000947 T5 DE112017000947 T5 DE 112017000947T5 DE 112017000947 T DE112017000947 T DE 112017000947T DE 112017000947 T5 DE112017000947 T5 DE 112017000947T5
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02428—Structure
- H01L21/0243—Surface structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
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- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/01—Manufacture or treatment
- H10D12/031—Manufacture or treatment of IGBTs
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- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
- H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
- H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
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- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
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- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
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- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/129—Cathode regions of diodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/393—Body regions of DMOS transistors or IGBTs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
- H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
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- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/512—Disposition of the gate electrodes, e.g. buried gates
- H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
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- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/01—Manufacture or treatment
- H10D8/051—Manufacture or treatment of Schottky diodes
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
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- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016-032292 | 2016-02-23 | ||
| JP2016032292A JP6651894B2 (ja) | 2016-02-23 | 2016-02-23 | 化合物半導体装置およびその製造方法 |
| PCT/JP2017/000799 WO2017145548A1 (ja) | 2016-02-23 | 2017-01-12 | 化合物半導体装置およびその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE112017000947T5 true DE112017000947T5 (de) | 2018-10-31 |
Family
ID=59685318
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112017000947.2T Pending DE112017000947T5 (de) | 2016-02-23 | 2017-01-12 | Verbindungshalbleitervorrichtung und herstellungsverfahren für dieverbindungshalbleitervorrichtung |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US10643851B2 (enrdf_load_stackoverflow) |
| JP (1) | JP6651894B2 (enrdf_load_stackoverflow) |
| DE (1) | DE112017000947T5 (enrdf_load_stackoverflow) |
| WO (1) | WO2017145548A1 (enrdf_load_stackoverflow) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018029796A1 (ja) * | 2016-08-10 | 2018-02-15 | 日産自動車株式会社 | 半導体装置 |
| JP6673232B2 (ja) * | 2017-01-17 | 2020-03-25 | 株式会社デンソー | 炭化珪素半導体装置 |
| JP7379880B2 (ja) * | 2019-06-21 | 2023-11-15 | 富士電機株式会社 | 半導体装置 |
| JP7354029B2 (ja) * | 2020-03-13 | 2023-10-02 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、電源回路、及び、コンピュータ |
| CN113921394A (zh) * | 2020-07-08 | 2022-01-11 | 上海贝岭股份有限公司 | 超级势垒整流器的制备方法以及超级势垒整流器 |
| CN119054083A (zh) * | 2022-04-14 | 2024-11-29 | 株式会社电装 | 半导体装置及其制造方法 |
| EP4391065A1 (en) * | 2022-12-22 | 2024-06-26 | Imec VZW | Shielding structure for a vertical iii-nitride semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014236189A (ja) | 2013-06-05 | 2014-12-15 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
| JP2016032292A (ja) | 2014-07-25 | 2016-03-07 | アイメック・ヴェーゼットウェーＩｍｅｃ Ｖｚｗ | インターリーブ型アナログ・ディジタル変換器のためのサンプルホールド回路 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4453671B2 (ja) * | 2006-03-08 | 2010-04-21 | トヨタ自動車株式会社 | 絶縁ゲート型半導体装置およびその製造方法 |
| JP4683075B2 (ja) * | 2008-06-10 | 2011-05-11 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
| JP5482745B2 (ja) | 2011-08-10 | 2014-05-07 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
| JP5582112B2 (ja) * | 2011-08-24 | 2014-09-03 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
| JP2013145770A (ja) * | 2012-01-13 | 2013-07-25 | Sumitomo Electric Ind Ltd | 半導体装置およびその製造方法 |
| JP5884617B2 (ja) * | 2012-04-19 | 2016-03-15 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
| JP5751213B2 (ja) * | 2012-06-14 | 2015-07-22 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
| WO2014171048A1 (ja) * | 2013-04-16 | 2014-10-23 | パナソニック株式会社 | 炭化珪素半導体装置およびその製造方法 |
| JP6341074B2 (ja) * | 2014-01-24 | 2018-06-13 | 株式会社デンソー | 半導体装置の製造方法 |
| US9768284B2 (en) * | 2015-03-05 | 2017-09-19 | Infineon Technologies Americas Corp. | Bipolar semiconductor device having a charge-balanced inter-trench structure |
-
2016
- 2016-02-23 JP JP2016032292A patent/JP6651894B2/ja active Active
-
2017
- 2017-01-12 WO PCT/JP2017/000799 patent/WO2017145548A1/ja active Application Filing
- 2017-01-12 DE DE112017000947.2T patent/DE112017000947T5/de active Pending
- 2017-01-12 US US16/070,061 patent/US10643851B2/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014236189A (ja) | 2013-06-05 | 2014-12-15 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
| JP2016032292A (ja) | 2014-07-25 | 2016-03-07 | アイメック・ヴェーゼットウェーＩｍｅｃ Ｖｚｗ | インターリーブ型アナログ・ディジタル変換器のためのサンプルホールド回路 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2017145548A1 (ja) | 2017-08-31 |
| JP6651894B2 (ja) | 2020-02-19 |
| US10643851B2 (en) | 2020-05-05 |
| JP2017152489A (ja) | 2017-08-31 |
| US20190019680A1 (en) | 2019-01-17 |
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