DE112015000428A5 - Verfahren zur Herstellung einer lateral strukturierten Phosphorschicht und optoelektronisches Halbleiterbauteil mit einer solchen Schicht - Google Patents

Verfahren zur Herstellung einer lateral strukturierten Phosphorschicht und optoelektronisches Halbleiterbauteil mit einer solchen Schicht Download PDF

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Publication number
DE112015000428A5
DE112015000428A5 DE112015000428.9T DE112015000428T DE112015000428A5 DE 112015000428 A5 DE112015000428 A5 DE 112015000428A5 DE 112015000428 T DE112015000428 T DE 112015000428T DE 112015000428 A5 DE112015000428 A5 DE 112015000428A5
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Germany
Prior art keywords
layer
producing
semiconductor component
optoelectronic semiconductor
laterally structured
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Withdrawn
Application number
DE112015000428.9T
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English (en)
Inventor
Britta Göötz
Ion Stoll
Alexander F. Pfeuffer
Dominik Scholz
Isabel Otto
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Publication of DE112015000428A5 publication Critical patent/DE112015000428A5/de
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D13/00—Electrophoretic coating characterised by the process
    • C25D13/02—Electrophoretic coating characterised by the process with inorganic material
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D13/00—Electrophoretic coating characterised by the process
    • C25D13/12—Electrophoretic coating characterised by the process characterised by the article coated
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D13/00—Electrophoretic coating characterised by the process
    • C25D13/22—Servicing or operating apparatus or multistep processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrochemistry (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Luminescent Compositions (AREA)
DE112015000428.9T 2014-01-20 2015-01-20 Verfahren zur Herstellung einer lateral strukturierten Phosphorschicht und optoelektronisches Halbleiterbauteil mit einer solchen Schicht Withdrawn DE112015000428A5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102014100542.2 2014-01-20
DE102014100542.2A DE102014100542A1 (de) 2014-01-20 2014-01-20 Verfahren zur Herstellung einer lateral strukturierten Schicht und optoelektronisches Halbleiterbauteil mit einer solchen Schicht
PCT/EP2015/050976 WO2015107211A1 (de) 2014-01-20 2015-01-20 Verfahren zur herstellung einer lateral strukturierten phosphorschicht und optoelektronisches halbleiterbauteil mit einer solchen phosphorschicht

Publications (1)

Publication Number Publication Date
DE112015000428A5 true DE112015000428A5 (de) 2016-10-06

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Family Applications (2)

Application Number Title Priority Date Filing Date
DE102014100542.2A Withdrawn DE102014100542A1 (de) 2014-01-20 2014-01-20 Verfahren zur Herstellung einer lateral strukturierten Schicht und optoelektronisches Halbleiterbauteil mit einer solchen Schicht
DE112015000428.9T Withdrawn DE112015000428A5 (de) 2014-01-20 2015-01-20 Verfahren zur Herstellung einer lateral strukturierten Phosphorschicht und optoelektronisches Halbleiterbauteil mit einer solchen Schicht

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102014100542.2A Withdrawn DE102014100542A1 (de) 2014-01-20 2014-01-20 Verfahren zur Herstellung einer lateral strukturierten Schicht und optoelektronisches Halbleiterbauteil mit einer solchen Schicht

Country Status (6)

Country Link
US (1) US9698316B2 (de)
JP (1) JP6268295B2 (de)
KR (1) KR20160111383A (de)
CN (1) CN106605013B (de)
DE (2) DE102014100542A1 (de)
WO (1) WO2015107211A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10497838B2 (en) * 2018-04-12 2019-12-03 Osram Opto Semiconductors Gmbh Method for producing an optic device, optic device and assembly comprising such an optic device
KR20230153013A (ko) * 2022-04-28 2023-11-06 고려대학교 산학협력단 나노 입자가 적용된 led 로드 정렬 구조, 및 나노 입자가 적용된 led 로드 정렬 구조의 제조 방법

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US5354695A (en) * 1992-04-08 1994-10-11 Leedy Glenn J Membrane dielectric isolation IC fabrication
JP2633680B2 (ja) * 1989-03-29 1997-07-23 株式会社リコー 導体パターン接続体とその接続方法
US6004179A (en) * 1998-10-26 1999-12-21 Micron Technology, Inc. Methods of fabricating flat panel evacuated displays
KR100314094B1 (ko) * 1999-08-12 2001-11-15 김순택 전기 영동법을 이용한 카본나노튜브 필드 에미터의 제조 방법
JP2001236026A (ja) * 2000-02-21 2001-08-31 Ricoh Co Ltd 表示用蛍光体、表示用蛍光体の製造方法、および該表示用蛍光体を使用した電界放出表示素子
JP2002243929A (ja) * 2001-02-16 2002-08-28 Fuji Xerox Co Ltd 光電着法および光触媒法によるカラーフィルターの製造方法、カラーフィルター、液晶表示装置およびカラーフィルターの製造装置
JP2002313565A (ja) * 2001-04-17 2002-10-25 Sharp Corp 発光表示素子の製造方法
US6642652B2 (en) 2001-06-11 2003-11-04 Lumileds Lighting U.S., Llc Phosphor-converted light emitting device
US7252749B2 (en) * 2001-11-30 2007-08-07 The University Of North Carolina At Chapel Hill Deposition method for nanostructure materials
JP2005197190A (ja) 2004-01-09 2005-07-21 Seiko Epson Corp 回路基板及び電気光学装置の製造方法、電気光学装置、及び電子機器
JP2007095627A (ja) * 2005-09-30 2007-04-12 Dainippon Printing Co Ltd スクリーン版とこれを用いた正孔注入層の形成方法および有機発光デバイス
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DE102007043877A1 (de) * 2007-06-29 2009-01-08 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von optoelektronischen Bauelementen und optoelektronisches Bauelement
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DE102008062933B4 (de) 2008-12-23 2021-05-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische Projektionsvorrichtung
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DE102012208287A1 (de) * 2012-05-16 2013-11-21 Osram Gmbh Verfahren zur herstellung eines optischen elements
DE102012105691B4 (de) 2012-06-28 2018-10-25 Osram Opto Semiconductors Gmbh Verfahren zur Abscheidung einer elektrophoretisch abgeschiedenen partikulären Schicht, strahlungsemittierendes Halbleiterbauelement und optisches Element
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Also Published As

Publication number Publication date
US9698316B2 (en) 2017-07-04
JP6268295B2 (ja) 2018-01-24
CN106605013A (zh) 2017-04-26
CN106605013B (zh) 2019-03-22
US20170040500A1 (en) 2017-02-09
DE102014100542A1 (de) 2015-07-23
JP2017508867A (ja) 2017-03-30
WO2015107211A1 (de) 2015-07-23
KR20160111383A (ko) 2016-09-26

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