DE112014004096B4 - Verfahren zur Herstellung von Massen-Siliciumcarbid - Google Patents

Verfahren zur Herstellung von Massen-Siliciumcarbid

Info

Publication number
DE112014004096B4
DE112014004096B4 DE112014004096.7T DE112014004096T DE112014004096B4 DE 112014004096 B4 DE112014004096 B4 DE 112014004096B4 DE 112014004096 T DE112014004096 T DE 112014004096T DE 112014004096 B4 DE112014004096 B4 DE 112014004096B4
Authority
DE
Germany
Prior art keywords
silicon carbide
seed crystal
crucible
procedure according
precursor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE112014004096.7T
Other languages
German (de)
English (en)
Other versions
DE112014004096T5 (de
Inventor
Roman V. Drachev
Parthasarathy Santhanaraghavan
Andriy M. Andrukhiv
David S. Lyttle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GTAT Corp
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GTAT Corp
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Publication date
Application filed by GTAT Corp filed Critical GTAT Corp
Publication of DE112014004096T5 publication Critical patent/DE112014004096T5/de
Application granted granted Critical
Publication of DE112014004096B4 publication Critical patent/DE112014004096B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/066—Heating of the material to be evaporated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE112014004096.7T 2013-09-06 2014-09-05 Verfahren zur Herstellung von Massen-Siliciumcarbid Active DE112014004096B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361874597P 2013-09-06 2013-09-06
US61/874,597 2013-09-06
PCT/US2014/054255 WO2015035140A1 (en) 2013-09-06 2014-09-05 Method for producing bulk silicon carbide

Publications (2)

Publication Number Publication Date
DE112014004096T5 DE112014004096T5 (de) 2016-06-23
DE112014004096B4 true DE112014004096B4 (de) 2026-05-13

Family

ID=52624259

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112014004096.7T Active DE112014004096B4 (de) 2013-09-06 2014-09-05 Verfahren zur Herstellung von Massen-Siliciumcarbid

Country Status (7)

Country Link
US (2) US10801126B2 (enExample)
JP (1) JP6487446B2 (enExample)
KR (1) KR102266585B1 (enExample)
CN (2) CN110670124B (enExample)
DE (1) DE112014004096B4 (enExample)
TW (2) TWI654346B (enExample)
WO (1) WO2015035140A1 (enExample)

Families Citing this family (12)

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Publication number Priority date Publication date Assignee Title
US10633762B2 (en) * 2013-09-06 2020-04-28 GTAT Corporation. Method for producing bulk silicon carbide by sublimation of a silicon carbide precursor prepared from silicon and carbon particles or particulate silicon carbide
CN112639174B (zh) * 2018-08-30 2022-09-20 赛尼克公司 生长半绝缘碳化硅单晶锭的方法和用于生长碳化硅单晶锭的装置
CN109402731B (zh) * 2018-10-17 2021-01-15 福建北电新材料科技有限公司 一种高纯半绝缘碳化硅晶体生长装置及其方法
JP2020189756A (ja) * 2019-05-17 2020-11-26 信越半導体株式会社 結晶成長装置及び結晶成長方法
EP3760766B1 (en) * 2019-07-03 2022-03-09 SiCrystal GmbH System for efficient manufacturing of a plurality of high-quality semiconductor single crystals, and method of manufacturing same
EP3760765B1 (en) * 2019-07-03 2022-03-16 SiCrystal GmbH System for horizontal growth of high-quality semiconductor single crystals, and method of manufacturing same
JP7434802B2 (ja) * 2019-10-30 2024-02-21 株式会社レゾナック 結晶成長装置及び結晶成長方法
CN112160025B (zh) * 2020-08-27 2021-07-16 露笑新能源技术有限公司 一种基于晶体炉的加热组件结构
AT524251B1 (de) * 2020-09-28 2023-04-15 Ebner Ind Ofenbau Vorrichtung zum Züchten von Einkristallen
US20220251725A1 (en) * 2021-02-09 2022-08-11 National Chung Shan Institute Of Science And Technology Method of growing on-axis silicon carbide single crystal by regulating silicon carbide source material in size
CN113652750B (zh) * 2021-08-18 2022-07-12 山东天岳先进科技股份有限公司 具有环形形貌的碳化硅晶体及其制备方法和制得的衬底
CN116716655B (zh) * 2023-06-14 2024-04-02 通威微电子有限公司 生长高质量碳化硅晶体的装置、方法及碳化硅晶体

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JPH06316499A (ja) 1993-04-30 1994-11-15 Sharp Corp 炭化珪素単結晶の製造方法
US5944890A (en) 1996-03-29 1999-08-31 Denso Corporation Method of producing single crystals and a seed crystal used in the method
WO2001063020A1 (en) 2000-02-15 2001-08-30 The Fox Group, Inc. Method and apparatus for growing low defect density silicon carbide and resulting material
US20020083892A1 (en) 2000-12-28 2002-07-04 Hiroyuki Kondo Method and apparatus for producing single crystal, substrate for growing single crystal and method for heating single crystal
US6451112B1 (en) 1999-10-15 2002-09-17 Denso Corporation Method and apparatus for fabricating high quality single crystal
US20030094132A1 (en) 2001-02-14 2003-05-22 Vodakov Yury Alexandrovich Apparatus for growing low defect density silicon carbide
CN1570225A (zh) 2003-04-24 2005-01-26 奥克麦蒂克有限公司 通过气相淀积制备单晶的设备和方法
US20060102068A1 (en) 2004-11-17 2006-05-18 Tsvetkov Valeri F Reduction of subsurface damage in the production of bulk SiC crystals
US20070283880A1 (en) 2005-03-24 2007-12-13 Tsvetkov Valeri F Apparatus and method for the production of bulk silicon carbide single crystals
US20080026591A1 (en) 2006-07-28 2008-01-31 Caracal, Inc. Sintered metal components for crystal growth reactors
JP2009274933A (ja) 2008-05-16 2009-11-26 Mitsubishi Electric Corp 単結晶成長装置および単結晶の製造方法
JP2011168431A (ja) 2010-02-18 2011-09-01 Mitsubishi Electric Corp 単結晶の製造装置
US20110214606A1 (en) 2010-03-04 2011-09-08 Bridgestone Corporation Apparatus and method for producing silicon carbide single crystal
US20120032150A1 (en) 2010-06-29 2012-02-09 Mikroelektro Semiconductor component, method of producing a semiconductor component, semiconductor device
CN102414349A (zh) 2009-11-30 2012-04-11 住友电气工业株式会社 制造单晶的方法
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US20140220298A1 (en) 2013-02-05 2014-08-07 Dow Corning Corporation Sic crystal with low dislocation density
EP2954101B1 (en) * 2013-02-05 2020-02-19 DDP Specialty Electronic Materials US 9, LLC Method and system for forming a sic crystal

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JPH08325099A (ja) * 1996-06-24 1996-12-10 Sanyo Electric Co Ltd ＳｉＣ単結晶の成長方法
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CN102534763A (zh) * 2012-01-17 2012-07-04 山东天岳先进材料科技有限公司 一种物理气相沉积法生长大尺寸碳化硅单晶的石墨坩埚及其应用
US10793971B2 (en) 2013-09-06 2020-10-06 Gtat Corporation Method and apparatus for producing bulk silicon carbide using a silicon carbide seed

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Publication number Priority date Publication date Assignee Title
JPS6124472A (ja) 1984-07-13 1986-02-03 Olympus Optical Co Ltd 感熱転写方式の階調記録方法
JPH06316499A (ja) 1993-04-30 1994-11-15 Sharp Corp 炭化珪素単結晶の製造方法
US5944890A (en) 1996-03-29 1999-08-31 Denso Corporation Method of producing single crystals and a seed crystal used in the method
US6451112B1 (en) 1999-10-15 2002-09-17 Denso Corporation Method and apparatus for fabricating high quality single crystal
WO2001063020A1 (en) 2000-02-15 2001-08-30 The Fox Group, Inc. Method and apparatus for growing low defect density silicon carbide and resulting material
US20020023581A1 (en) 2000-02-15 2002-02-28 Vodakov Yury Alexandrovich Method for growing low defect density silicon carbide
JP2003523918A (ja) 2000-02-15 2003-08-12 ザ フォックス グループ，インコーポレイティド 低欠陥密度炭化ケイ素を成長させる方法及び装置、並びに得られる物質
JP4880164B2 (ja) 2000-02-15 2012-02-22 ザ フォックス グループ，インコーポレイティド 低欠陥密度炭化ケイ素材料
US20020083892A1 (en) 2000-12-28 2002-07-04 Hiroyuki Kondo Method and apparatus for producing single crystal, substrate for growing single crystal and method for heating single crystal
US20030094132A1 (en) 2001-02-14 2003-05-22 Vodakov Yury Alexandrovich Apparatus for growing low defect density silicon carbide
CN1570225A (zh) 2003-04-24 2005-01-26 奥克麦蒂克有限公司 通过气相淀积制备单晶的设备和方法
US20060102068A1 (en) 2004-11-17 2006-05-18 Tsvetkov Valeri F Reduction of subsurface damage in the production of bulk SiC crystals
US20070283880A1 (en) 2005-03-24 2007-12-13 Tsvetkov Valeri F Apparatus and method for the production of bulk silicon carbide single crystals
US20080026591A1 (en) 2006-07-28 2008-01-31 Caracal, Inc. Sintered metal components for crystal growth reactors
JP2009274933A (ja) 2008-05-16 2009-11-26 Mitsubishi Electric Corp 単結晶成長装置および単結晶の製造方法
US20120103249A1 (en) 2009-03-26 2012-05-03 Ii-Vi Incorporated Sic single crystal sublimation growth method and apparatus
CN102414349A (zh) 2009-11-30 2012-04-11 住友电气工业株式会社 制造单晶的方法
JP2011168431A (ja) 2010-02-18 2011-09-01 Mitsubishi Electric Corp 単結晶の製造装置
US20110214606A1 (en) 2010-03-04 2011-09-08 Bridgestone Corporation Apparatus and method for producing silicon carbide single crystal
US20120032150A1 (en) 2010-06-29 2012-02-09 Mikroelektro Semiconductor component, method of producing a semiconductor component, semiconductor device
CN202440568U (zh) * 2012-01-17 2012-09-19 山东天岳先进材料科技有限公司 一种用于生长碳化硅晶棒的石墨坩埚
US20140220298A1 (en) 2013-02-05 2014-08-07 Dow Corning Corporation Sic crystal with low dislocation density
WO2014123636A1 (en) 2013-02-05 2014-08-14 Dow Corning Corporation Sic crystal with low dislocation density
EP2954100B1 (en) * 2013-02-05 2019-05-15 Dow Silicones Corporation Method for manufacturing a sic crystal with low dislocation density
EP2954101B1 (en) * 2013-02-05 2020-02-19 DDP Specialty Electronic Materials US 9, LLC Method and system for forming a sic crystal

Also Published As

Publication number Publication date
CN105518187B (zh) 2019-11-08
US20210032770A1 (en) 2021-02-04
TW201522726A (zh) 2015-06-16
TWI654346B (zh) 2019-03-21
DE112014004096T5 (de) 2016-06-23
CN105518187A (zh) 2016-04-20
JP6487446B2 (ja) 2019-03-20
JP2016531836A (ja) 2016-10-13
CN110670124B (zh) 2021-07-30
KR102266585B1 (ko) 2021-06-18
US11505876B2 (en) 2022-11-22
WO2015035140A1 (en) 2015-03-12
KR20160050086A (ko) 2016-05-10
US20150068445A1 (en) 2015-03-12
CN110670124A (zh) 2020-01-10
TWI690627B (zh) 2020-04-11
US10801126B2 (en) 2020-10-13
TW201920784A (zh) 2019-06-01

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