DE112013007447B4 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung Download PDF

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Publication number
DE112013007447B4
DE112013007447B4 DE112013007447.8T DE112013007447T DE112013007447B4 DE 112013007447 B4 DE112013007447 B4 DE 112013007447B4 DE 112013007447 T DE112013007447 T DE 112013007447T DE 112013007447 B4 DE112013007447 B4 DE 112013007447B4
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Prior art keywords
layer
area
surface electrode
region
recess
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Active
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DE112013007447.8T
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German (de)
English (en)
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DE112013007447T5 (de
Inventor
Shigeo TOI
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/40139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous strap daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
    • H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49548—Cross section geometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
DE112013007447.8T 2013-09-19 2013-09-19 Halbleitervorrichtung Active DE112013007447B4 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2013/075235 WO2015040712A1 (ja) 2013-09-19 2013-09-19 半導体装置

Publications (2)

Publication Number Publication Date
DE112013007447T5 DE112013007447T5 (de) 2016-06-16
DE112013007447B4 true DE112013007447B4 (de) 2022-01-27

Family

ID=52688397

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112013007447.8T Active DE112013007447B4 (de) 2013-09-19 2013-09-19 Halbleitervorrichtung

Country Status (4)

Country Link
JP (1) JP6046262B2 (ja)
CN (1) CN105556661B (ja)
DE (1) DE112013007447B4 (ja)
WO (1) WO2015040712A1 (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6264334B2 (ja) * 2015-07-21 2018-01-24 トヨタ自動車株式会社 半導体装置
JP6299789B2 (ja) 2016-03-09 2018-03-28 トヨタ自動車株式会社 スイッチング素子
JP6460016B2 (ja) * 2016-03-09 2019-01-30 トヨタ自動車株式会社 スイッチング素子
JP6588363B2 (ja) 2016-03-09 2019-10-09 トヨタ自動車株式会社 スイッチング素子
CN108346700B (zh) * 2017-01-24 2021-10-12 株式会社电装 半导体装置及其制造方法
JP7248962B2 (ja) 2017-08-24 2023-03-30 株式会社Flosfia 半導体装置
JP7248961B2 (ja) 2017-08-24 2023-03-30 株式会社Flosfia 半導体装置
JP7013735B2 (ja) 2017-09-05 2022-02-01 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
WO2019049572A1 (ja) * 2017-09-05 2019-03-14 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
US20220045018A1 (en) * 2018-11-20 2022-02-10 Mitsubishi Electric Corporation Semiconductor device and method of manufacturing semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10236455A1 (de) 2001-08-09 2003-06-05 Denso Corp Halbleiterbauelement
DE102006041575A1 (de) 2005-11-18 2007-06-06 Mitsubishi Electric Corporation Halbleitervorrichtung
JP4078993B2 (ja) 2003-01-27 2008-04-23 三菱電機株式会社 半導体装置
US20100140658A1 (en) 2008-12-10 2010-06-10 Denso Corporation Method of manufacturing semiconductor device including insulated gate bipolar transistor and diode

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007266483A (ja) * 2006-03-29 2007-10-11 Sanyo Electric Co Ltd 半導体装置およびその製造方法
JP4873002B2 (ja) * 2008-12-12 2012-02-08 株式会社デンソー 半導体装置の製造方法
JP5279632B2 (ja) * 2009-06-25 2013-09-04 三菱電機株式会社 半導体モジュール
JP2011066371A (ja) * 2009-08-18 2011-03-31 Denso Corp 半導体装置およびその製造方法
DE102010038933A1 (de) * 2009-08-18 2011-02-24 Denso Corporation, Kariya-City Halbleitervorrichtung mit Halbleiterchip und Metallplatte und Verfahren zu deren Fertigung
JP2013004943A (ja) * 2011-06-22 2013-01-07 Renesas Electronics Corp 半導体装置及びその製造方法
JP2013045973A (ja) * 2011-08-25 2013-03-04 Panasonic Corp 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10236455A1 (de) 2001-08-09 2003-06-05 Denso Corp Halbleiterbauelement
JP4078993B2 (ja) 2003-01-27 2008-04-23 三菱電機株式会社 半導体装置
DE102006041575A1 (de) 2005-11-18 2007-06-06 Mitsubishi Electric Corporation Halbleitervorrichtung
US20100140658A1 (en) 2008-12-10 2010-06-10 Denso Corporation Method of manufacturing semiconductor device including insulated gate bipolar transistor and diode

Also Published As

Publication number Publication date
JP6046262B2 (ja) 2016-12-14
DE112013007447T5 (de) 2016-06-16
CN105556661A (zh) 2016-05-04
JPWO2015040712A1 (ja) 2017-03-02
CN105556661B (zh) 2018-07-24
WO2015040712A1 (ja) 2015-03-26

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