DE112013006008B4 - Prozessladungsschutz für Ladungseinfangspeicher mit Split-Gate und Herstellungsverfahren - Google Patents

Prozessladungsschutz für Ladungseinfangspeicher mit Split-Gate und Herstellungsverfahren Download PDF

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Publication number
DE112013006008B4
DE112013006008B4 DE112013006008.6T DE112013006008T DE112013006008B4 DE 112013006008 B4 DE112013006008 B4 DE 112013006008B4 DE 112013006008 T DE112013006008 T DE 112013006008T DE 112013006008 B4 DE112013006008 B4 DE 112013006008B4
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Germany
Prior art keywords
gate
dielectric
substrate
layer
over
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DE112013006008.6T
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German (de)
English (en)
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DE112013006008T5 (de
Inventor
Chun Chen
Sameer Haddad
Tung Chang Kuo
Mark Ramsbey
Unsoon Kim
Shenqing Fang
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Infineon Technologies LLC
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Infineon Technologies LLC
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/696—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes having at least one additional gate, e.g. program gate, erase gate or select gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/921—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs characterised by the configuration of the interconnections connecting the protective arrangements, e.g. ESD buses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements

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  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE112013006008.6T 2012-12-14 2013-12-12 Prozessladungsschutz für Ladungseinfangspeicher mit Split-Gate und Herstellungsverfahren Active DE112013006008B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/715,705 2012-12-14
US13/715,705 US8816438B2 (en) 2012-12-14 2012-12-14 Process charging protection for split gate charge trapping flash
PCT/US2013/074732 WO2014093654A2 (en) 2012-12-14 2013-12-12 Process charging protection for split gate charge trapping flash

Publications (2)

Publication Number Publication Date
DE112013006008T5 DE112013006008T5 (de) 2015-10-01
DE112013006008B4 true DE112013006008B4 (de) 2023-04-13

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE112013006008.6T Active DE112013006008B4 (de) 2012-12-14 2013-12-12 Prozessladungsschutz für Ladungseinfangspeicher mit Split-Gate und Herstellungsverfahren

Country Status (4)

Country Link
US (1) US8816438B2 (enExample)
JP (1) JP2016500481A (enExample)
DE (1) DE112013006008B4 (enExample)
WO (1) WO2014093654A2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10872898B2 (en) * 2017-07-19 2020-12-22 Cypress Semiconductor Corporation Embedded non-volatile memory device and fabrication method of the same
DE102021121743B4 (de) 2021-08-23 2025-01-09 Aeon Robotics GmbH Verfahren zum Trainieren eines Roboters und Steuerungseinrichtung mit einer Roboterhand
US20230171963A1 (en) * 2021-11-26 2023-06-01 Samsung Electronics Co., Ltd. Semiconductor device

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US20010055847A1 (en) 1997-09-19 2001-12-27 Nec Corporation Nonvolatile semiconductor storage apparatus and production method of the same
US20050006707A1 (en) 2003-06-03 2005-01-13 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for manufacturing the same
US20050199940A1 (en) 2004-03-10 2005-09-15 Toshiyuki Mine Nonvolatile semiconductor memory device and manufacturing method thereof
US20050263816A1 (en) 2004-05-25 2005-12-01 Taiwan Semiconductor Manufacturing Co. Ltd. Microelectronic device having floating gate protective layer and method of manufacture therefor

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EP0614223B1 (en) * 1993-02-17 1999-10-13 STMicroelectronics S.r.l. Non-volatile memory with protection diode
US5457336A (en) * 1994-10-13 1995-10-10 Advanced Micro Devices, Inc. Non-volatile memory structure including protection and structure for maintaining threshold stability
JPH10173157A (ja) * 1996-12-06 1998-06-26 Toshiba Corp 半導体装置
US6112192A (en) * 1997-05-09 2000-08-29 International Business Machines Corp. Method for providing individually customized content in a network
US5824584A (en) 1997-06-16 1998-10-20 Motorola, Inc. Method of making and accessing split gate memory device
US5969383A (en) 1997-06-16 1999-10-19 Motorola, Inc. Split-gate memory device and method for accessing the same
JP3206652B2 (ja) * 1998-10-01 2001-09-10 日本電気株式会社 半導体装置及び半導体装置の製造方法
TW546840B (en) 2001-07-27 2003-08-11 Hitachi Ltd Non-volatile semiconductor memory device
JP2003044535A (ja) * 2001-08-01 2003-02-14 Matsushita Electric Ind Co Ltd 半導体集積回路の設計方法
JP4601287B2 (ja) 2002-12-26 2010-12-22 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
JP2004363254A (ja) * 2003-06-03 2004-12-24 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2005150396A (ja) * 2003-11-14 2005-06-09 Matsushita Electric Ind Co Ltd 半導体装置の製造方法及び半導体装置
JP5007017B2 (ja) 2004-06-30 2012-08-22 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2006041354A (ja) 2004-07-29 2006-02-09 Renesas Technology Corp 半導体装置及びその製造方法
JP5116987B2 (ja) 2005-05-23 2013-01-09 ルネサスエレクトロニクス株式会社 集積半導体不揮発性記憶装置
US7315066B2 (en) * 2005-06-01 2008-01-01 International Business Machines Corporation Protect diodes for hybrid-orientation substrate structures
JP4659527B2 (ja) 2005-06-20 2011-03-30 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2007194511A (ja) 2006-01-23 2007-08-02 Renesas Technology Corp 不揮発性半導体記憶装置およびその製造方法
JP4928825B2 (ja) 2006-05-10 2012-05-09 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US7750407B2 (en) * 2006-12-18 2010-07-06 Spansion Llc Strapping contact for charge protection
US7948035B2 (en) * 2008-02-20 2011-05-24 Spansion Llc Decoding system capable of charging protection for flash memory devices
US7957190B2 (en) * 2008-05-30 2011-06-07 Freescale Semiconductor, Inc. Memory having P-type split gate memory cells and method of operation
JP2010272649A (ja) * 2009-05-20 2010-12-02 Panasonic Corp 半導体装置及びその製造方法
JP2011181124A (ja) 2010-02-26 2011-09-15 Renesas Electronics Corp 不揮発性半導体記憶装置および不揮発性半導体記憶装置の動作方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010055847A1 (en) 1997-09-19 2001-12-27 Nec Corporation Nonvolatile semiconductor storage apparatus and production method of the same
US20050006707A1 (en) 2003-06-03 2005-01-13 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for manufacturing the same
US20050199940A1 (en) 2004-03-10 2005-09-15 Toshiyuki Mine Nonvolatile semiconductor memory device and manufacturing method thereof
US20050263816A1 (en) 2004-05-25 2005-12-01 Taiwan Semiconductor Manufacturing Co. Ltd. Microelectronic device having floating gate protective layer and method of manufacture therefor

Also Published As

Publication number Publication date
WO2014093654A3 (en) 2014-10-23
JP2016500481A (ja) 2016-01-12
US8816438B2 (en) 2014-08-26
DE112013006008T5 (de) 2015-10-01
WO2014093654A2 (en) 2014-06-19
US20140167135A1 (en) 2014-06-19

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Owner name: INFINEON TECHNOLOGIES LLC, SAN JOSE, US

Free format text: FORMER OWNER: SPANSION LLC, SUNNYVALE, CALIF., US

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