DE112006000959B4 - Thermopile Infrarot Sensorarray - Google Patents

Thermopile Infrarot Sensorarray Download PDF

Info

Publication number
DE112006000959B4
DE112006000959B4 DE112006000959T DE112006000959T DE112006000959B4 DE 112006000959 B4 DE112006000959 B4 DE 112006000959B4 DE 112006000959 T DE112006000959 T DE 112006000959T DE 112006000959 T DE112006000959 T DE 112006000959T DE 112006000959 B4 DE112006000959 B4 DE 112006000959B4
Authority
DE
Germany
Prior art keywords
sensor
thermopile
sensor array
array according
infrared sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE112006000959T
Other languages
German (de)
English (en)
Other versions
DE112006000959A5 (de
Inventor
Dr. Leneke Wilhelm
Dr. Simon Marion
Mischa Schulze
Karlheinz Storck
Dr. Schieferdecker Jörg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HEIMANN Sensor GmbH
Original Assignee
HEIMANN Sensor GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HEIMANN Sensor GmbH filed Critical HEIMANN Sensor GmbH
Publication of DE112006000959A5 publication Critical patent/DE112006000959A5/de
Application granted granted Critical
Publication of DE112006000959B4 publication Critical patent/DE112006000959B4/de
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/20—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming only infrared radiation into image signals
    • H04N25/21—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming only infrared radiation into image signals for transforming thermal infrared radiation into image signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)
DE112006000959T 2005-05-17 2006-05-16 Thermopile Infrarot Sensorarray Expired - Fee Related DE112006000959B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102005023333.3 2005-05-17
DE102005023333 2005-05-17
PCT/DE2006/000841 WO2006122529A2 (de) 2005-05-17 2006-05-16 Thermopile infrarot sensorarray

Publications (2)

Publication Number Publication Date
DE112006000959A5 DE112006000959A5 (de) 2008-01-24
DE112006000959B4 true DE112006000959B4 (de) 2012-03-29

Family

ID=36691904

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112006000959T Expired - Fee Related DE112006000959B4 (de) 2005-05-17 2006-05-16 Thermopile Infrarot Sensorarray

Country Status (4)

Country Link
US (1) US7842922B2 (enExample)
JP (1) JP5308814B2 (enExample)
DE (1) DE112006000959B4 (enExample)
WO (1) WO2006122529A2 (enExample)

Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5540406B2 (ja) * 2007-03-21 2014-07-02 セイコーＮｐｃ株式会社 赤外線センサ装置
DE102007025585A1 (de) * 2007-06-01 2008-12-04 Siemens Ag Verfahren zum Betreiben eines Verbrennungsmotors und Vorrichtung zur Bestimmung eines Betriebsparameters dessen
DE102007039228B8 (de) 2007-08-20 2009-12-17 Perkinelmer Optoelectronics Gmbh & Co.Kg Sensorkappenanordnung Sensor Schaltung
JP2009079946A (ja) * 2007-09-26 2009-04-16 Seiko Npc Corp サーモパイル型赤外線センサ
EP2169369A1 (en) * 2008-09-25 2010-03-31 General Electric Company Miniature thermopile sensor
JP2012523692A (ja) * 2009-04-12 2012-10-04 ユーディー ホールディングス，エルエルシー 赤外線検出器
US8395118B2 (en) 2009-04-12 2013-03-12 Ud Holdings, Llc Infrared detector having at least one switch for modulation and/or bypass
US8136984B1 (en) * 2009-04-20 2012-03-20 Fluke Corporation Portable IR thermometer having thermal imaging capability
DE102010042108B4 (de) * 2010-01-18 2013-10-17 Heimann Sensor Gmbh Thermopile-Infrarot-Sensor in monolithischer Si-Mikromechanik
JP5645245B2 (ja) * 2010-02-23 2014-12-24 パナソニックＩｐマネジメント株式会社 赤外線センサモジュール
JP5842118B2 (ja) * 2010-06-24 2016-01-13 パナソニックＩｐマネジメント株式会社 赤外線センサ
US9083278B2 (en) * 2010-07-05 2015-07-14 Stmicroelectronics S.R.L. Device for transforming electromagnetic IR energy from spatially incoherent, low-power density, broad-band radiation in spatially coherent, high-power density, quasi-monochromatic radiation
US8927934B2 (en) * 2010-09-13 2015-01-06 Ricoh Company, Ltd. Thermal infrared sensor and manufacturing method thereof
FR2966596B1 (fr) * 2010-10-26 2012-12-07 Commissariat Energie Atomique Dispositif de detection d'un rayonnement electromagnetique.
US20150122999A1 (en) * 2010-12-22 2015-05-07 Seiko Epson Corporation Thermal detector, thermal detection device, electronic instrument, and thermal detector manufacturing method
KR20120100643A (ko) * 2011-03-04 2012-09-12 한국과학기술원 Ｓａ－ＦＰＡ를 이용한 적외선 감지기 및 이의 제조 방법
US9444027B2 (en) 2011-10-04 2016-09-13 Infineon Technologies Ag Thermoelectrical device and method for manufacturing same
CN102509729B (zh) * 2011-11-21 2014-02-05 中国科学院苏州纳米技术与纳米仿生研究所 可调谐热光带通滤波器像素阵列的制作方法
WO2013120652A1 (de) * 2012-02-16 2013-08-22 Heimann Sensor Gmbh Thermopile infrarot-sensorstruktur mit hohem füllgrad
US9250126B2 (en) 2012-10-26 2016-02-02 Excelitas Technologies Singapore Pte. Ltd Optical sensing element arrangement with integral package
GB2521476A (en) * 2013-12-22 2015-06-24 Melexis Technologies Nv Infrared thermal sensor with good SNR
GB2521474A (en) * 2013-12-22 2015-06-24 Melexis Technologies Nv Infrared thermal sensor with beams having different widths
JP2016151523A (ja) * 2015-02-18 2016-08-22 浜松ホトニクス株式会社 赤外線検出装置
US9978926B2 (en) 2015-05-14 2018-05-22 The Hong Kong University Of Science And Technology Thermal radiation microsensor comprising thermoelectric micro pillars
JP6709285B2 (ja) * 2015-10-05 2020-06-10 ハイマン・ゼンゾル・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング モノリシックに集積された信号処理部を有する高解像度のサーモパイル赤外線センサアレイ
US10113837B2 (en) 2015-11-03 2018-10-30 N2 Imaging Systems, LLC Non-contact optical connections for firearm accessories
EP4462360A3 (en) 2016-01-20 2025-02-26 Carrier Corporation A building management system using object detection and tracking in a large space with a low resolution sensor
US10551246B2 (en) * 2016-01-28 2020-02-04 Ams Sensors Uk Limited IR detector array device
US10128302B2 (en) 2016-01-28 2018-11-13 Ams Sensors Uk Limited IR detector array device
WO2017139215A1 (en) 2016-02-10 2017-08-17 Carrier Corporation Presence detection system
DE102016209315A1 (de) * 2016-05-30 2017-11-30 Robert Bosch Gmbh Thermoelektrische Anordnung, insbesondere thermoelektrische Sensoranordnung, sowie entsprechendes Herstellungsverfahren
DE102017102833A1 (de) * 2017-01-18 2018-07-19 Heimann Sensor Gmbh Hochauflösendes Thermopile Infrarot Sensorarray
US10403674B2 (en) 2017-07-12 2019-09-03 Meridian Innovation Pte Ltd Scalable thermoelectric-based infrared detector
US10199424B1 (en) 2017-07-19 2019-02-05 Meridian Innovation Pte Ltd Thermoelectric-based infrared detector having a cavity and a MEMS structure defined by BEOL metals lines
US10923525B2 (en) 2017-07-12 2021-02-16 Meridian Innovation Pte Ltd CMOS cap for MEMS devices
RU2671295C1 (ru) * 2017-08-17 2018-10-30 Общество с ограниченной ответственностью "ГрафИмпресс" Ячейка термопарного приемника ик изображения
WO2019087522A1 (ja) * 2017-10-31 2019-05-09 ソニーセミコンダクタソリューションズ株式会社 撮像装置
FR3073941B1 (fr) * 2017-11-21 2021-01-15 Commissariat Energie Atomique Dispositif de detection d’un rayonnement electromagnetique a diaphotie reduite
US10436646B2 (en) 2018-02-28 2019-10-08 Ams Sensors Uk Limited IR detector arrays
US12181351B2 (en) 2018-02-28 2024-12-31 Arthur Beckman Thermopile assembly providing a massive electrical series of wire thermocouple elements
US10753709B2 (en) 2018-05-17 2020-08-25 Sensors Unlimited, Inc. Tactical rails, tactical rail systems, and firearm assemblies having tactical rails
JP7142471B2 (ja) * 2018-06-07 2022-09-27 浜松ホトニクス株式会社 光検出器
JP7142470B2 (ja) * 2018-06-07 2022-09-27 浜松ホトニクス株式会社 光検出器
US10645348B2 (en) 2018-07-07 2020-05-05 Sensors Unlimited, Inc. Data communication between image sensors and image displays
US11079202B2 (en) 2018-07-07 2021-08-03 Sensors Unlimited, Inc. Boresighting peripherals to digital weapon sights
US10742913B2 (en) 2018-08-08 2020-08-11 N2 Imaging Systems, LLC Shutterless calibration
US10921578B2 (en) 2018-09-07 2021-02-16 Sensors Unlimited, Inc. Eyecups for optics
US11122698B2 (en) 2018-11-06 2021-09-14 N2 Imaging Systems, LLC Low stress electronic board retainers and assemblies
US10801813B2 (en) 2018-11-07 2020-10-13 N2 Imaging Systems, LLC Adjustable-power data rail on a digital weapon sight
US10796860B2 (en) 2018-12-12 2020-10-06 N2 Imaging Systems, LLC Hermetically sealed over-molded button assembly
US11143838B2 (en) 2019-01-08 2021-10-12 N2 Imaging Systems, LLC Optical element retainers
US11845653B2 (en) 2019-04-01 2023-12-19 Meridian Innovation Pte Ltd Heterogenous integration of complementary metal-oxide-semiconductor and MEMS sensors
CN113677618B (zh) 2019-04-01 2025-01-10 迈瑞迪创新科技有限公司 基于热电的红外探测器的单片后互补金属氧化物-半导体集成
JP7316830B2 (ja) * 2019-04-18 2023-07-28 三菱電機株式会社 誘導加熱調理器
KR102826379B1 (ko) 2019-07-09 2025-06-26 하이만 센서 게엠베하 진공 충전 웨이퍼 레벨 하우징 내에 열 적외선 센서 어레이를 생산하는 방법
TWI734316B (zh) 2019-12-24 2021-07-21 新唐科技股份有限公司 熱感測器及其製造方法
CN114257242A (zh) * 2020-09-22 2022-03-29 无锡华润上华科技有限公司 热电堆阵列及其信号读出电路
CN112701211B (zh) * 2020-12-29 2023-04-28 上海烨映微电子科技股份有限公司 红外热电堆封装结构及方法
US11808633B2 (en) * 2021-08-16 2023-11-07 Oriental System Technology Inc. Infrared thermopile sensor

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5808350A (en) * 1997-01-03 1998-09-15 Raytheon Company Integrated IR, visible and NIR sensor and methods of fabricating same
EP0869341A1 (en) * 1997-03-31 1998-10-07 Nec Corporation Thermal infrared detecting device
DE19923606A1 (de) * 1998-06-30 2000-01-13 Bosch Gmbh Robert Vorrichtung zur Erfassung elektromagnetischer Strahlung
US6040579A (en) * 1997-02-28 2000-03-21 Em Microelectronic-Marin Sa Thermoelectric sensor
EP1045233A2 (en) * 1999-04-14 2000-10-18 Nec Corporation Thermal functional device capable of high-speed response and a method of driving the device
US20010035559A1 (en) * 2000-04-26 2001-11-01 Hiroshi Ando Infrared image sensor with temperature compensation element
US6649913B1 (en) * 2002-02-26 2003-11-18 Raytheon Company Method and apparatus providing focal plane array active thermal control elements
DE10321639A1 (de) * 2003-05-13 2004-12-02 Heimann Sensor Gmbh Infrarotsensor mit optimierter Flächennutzung
DE10322860A1 (de) * 2003-05-21 2004-12-23 X-Fab Semiconductor Foundries Ag Schaltungsanordnung zum Auslesen elektronischer Signale aus hochauflösenden thermischen Sensoren

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02144966A (ja) * 1988-11-28 1990-06-04 Matsushita Electron Corp 半導体集積回路
JPH0634661Y2 (ja) * 1989-11-30 1994-09-07 新日本無線株式会社 サーモパイル素子
DE4102524C2 (de) * 1990-01-30 2000-05-25 Citizen Watch Co Ltd Infrarotsensor
JPH0626925A (ja) * 1992-07-06 1994-02-04 Fujitsu Ltd 赤外線検出器
WO1994007115A1 (fr) * 1992-09-17 1994-03-31 Mitsubishi Denki Kabushiki Kaisha Reseau de detecteurs a infrarouge et son procede de production
JPH06137935A (ja) * 1992-10-22 1994-05-20 Matsushita Electric Works Ltd 赤外線センサ
DE19630150B4 (de) * 1995-07-28 2009-03-05 Denso Corp., Kariya-shi Verfahren zum Entwerfen einer Halbleitervorrichtung
US5962854A (en) * 1996-06-12 1999-10-05 Ishizuka Electronics Corporation Infrared sensor and infrared detector
JPH10227689A (ja) * 1997-02-17 1998-08-25 Mitsubishi Electric Corp 赤外線検出器および赤外線フォーカルプレーンアレイ
DE19735379B4 (de) * 1997-08-14 2008-06-05 Perkinelmer Optoelectronics Gmbh Sensorsystem und Herstellungsverfahren
JPH11148868A (ja) * 1997-11-17 1999-06-02 Masanori Okuyama 熱検知素子およびその製造方法
CN1258820C (zh) 1998-06-30 2006-06-07 罗伯特·博施有限公司 电磁辐射的探测装置
DE19843984B4 (de) * 1998-09-25 2013-10-24 Robert Bosch Gmbh Verfahren zur Herstellung von Strahlungssensoren
JP2000186958A (ja) * 1998-12-24 2000-07-04 Sharp Corp 熱型赤外線検出素子
US6504153B1 (en) * 1999-07-26 2003-01-07 Kabushiki Kaisha Toshiba Semiconductor infrared detecting device
JP3523588B2 (ja) * 1999-11-01 2004-04-26 松下電器産業株式会社 半導体装置およびその製造方法
JP2001296184A (ja) * 2000-04-17 2001-10-26 Denso Corp 赤外線検出装置
JP2001326367A (ja) * 2000-05-12 2001-11-22 Denso Corp センサおよびその製造方法
JP3655232B2 (ja) * 2001-11-15 2005-06-02 株式会社東芝 赤外線センサ
JP2004144715A (ja) * 2002-10-28 2004-05-20 Ishizuka Electronics Corp 赤外線検出装置
JP4231681B2 (ja) * 2002-11-22 2009-03-04 株式会社堀場製作所 サーモパイルアレイセンサ

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5808350A (en) * 1997-01-03 1998-09-15 Raytheon Company Integrated IR, visible and NIR sensor and methods of fabricating same
US6040579A (en) * 1997-02-28 2000-03-21 Em Microelectronic-Marin Sa Thermoelectric sensor
EP0869341A1 (en) * 1997-03-31 1998-10-07 Nec Corporation Thermal infrared detecting device
DE19923606A1 (de) * 1998-06-30 2000-01-13 Bosch Gmbh Robert Vorrichtung zur Erfassung elektromagnetischer Strahlung
EP1045233A2 (en) * 1999-04-14 2000-10-18 Nec Corporation Thermal functional device capable of high-speed response and a method of driving the device
US20010035559A1 (en) * 2000-04-26 2001-11-01 Hiroshi Ando Infrared image sensor with temperature compensation element
US6649913B1 (en) * 2002-02-26 2003-11-18 Raytheon Company Method and apparatus providing focal plane array active thermal control elements
DE10321639A1 (de) * 2003-05-13 2004-12-02 Heimann Sensor Gmbh Infrarotsensor mit optimierter Flächennutzung
DE10322860A1 (de) * 2003-05-21 2004-12-23 X-Fab Semiconductor Foundries Ag Schaltungsanordnung zum Auslesen elektronischer Signale aus hochauflösenden thermischen Sensoren

Non-Patent Citations (11)

* Cited by examiner, † Cited by third party
Title
BALTES, Henry; PAUL, Oliver, et.al.: Micromachined Thermally Based CMOS Microsensors. Proceedings of the IEEE, Vol.86, No.8, Aug. 1998, pp.1660-1678 *
COLE, B. E.; HAN, C. J.; HIGASHI, R. E. et al.: Monolithic 512x512 CMOS-microbridge arrays for infrared scene projection. The 8th International Conference on Solid State Sensors and Actuators, and Eurosensors IX, Transducers '95 - Eurosensors IX, Stockholm, Sweden, 25-29 June, 1995. pp. 628-631. *
EMINOGLU, Selim; TANRIKULU, M. Yusuf, et.al.: A low-cost 64x64 uncooled infrared detector array in standard CMOS. The 12th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS '03, Boston, 8-12 June 2003. Conference Proceedings, Vol. 1, pp.316-319 *
Hirota, Masaki; Nakajima, Yasushi; Saito, Masanori et al.: Thermoelectric Infrared Imaging Sensors for Automotive Applications. In: Razeghi, Manijeh; Brown, Gail J. [Eds.]: Quantum Sensing and Nanophotonic Devices. Proc. of SPIE, Vol. 5359, July 2004, pp. 111-125. *
JANSSON, Christer; RINGH, Ulf et.al.: FOA/DSTO uncooled IRFPA development. In: Andresen,Bjorn F., Strojnik,Maria (Eds.): Infrared Technology and Applications XXV. Proc. of SPIE, Vol. 3698, July 1999, pp. 264-275 *
KANNO,Toshio, SAGA,Minoru, et.al.: Uncooled infrared focal plane array having 128x128 thermopile detector elements. In: Andresen,Bjorn F. (Ed.): Infrared Technology XX, Proceedings of SPIE, Vol. 2269, Oct. 1994, pp.450-459 *
McEWEN,R. Kennedy: European Uncooled Thermal Imaging Technology. In: Andresen,Bjorn F., Strojnik, Marija (Eds.): Infrared Technology and Applications XXIII, Procs. of SPIE, Vol.3061, Aug. 1997, pp.179-190 *
OLIVER, Andrew D.; WISE, Kensall D.: A 1024-element bulk-micromachined thermopile infrared imaging array. Sensors and Actuators A: Physical, Vol. 73 (1999), No. 3, pp. 222-231 *
ROGALSKI, Antoni: Optical detectors for focal plane arrays. Opto-Electronics Review (ISSN 1230-3402), Vol. 12, No. 2, 2004, pp. 221-245 *
SCHAUFELBÜHL,A., MÜNCH,U., et.al.: 256-pixel CMOS-integrated thermoelectric infrared sensor array. The 14th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2001, Interlaken, Switzerland, Jan.21-25, 2001, Conference Proceedings, pp.200-203 *
Zhang, Q. Q.; Ploss, Bernd; Chan, H. L. W.; Choy, C. L.: Integrated Pyroelectric Array based on PCLT/P (VDF-TrFE) composite. Sensors and Actuators A: Physical. 86 (2000), Vol. 86, No. 3, pp. 216-219. *

Also Published As

Publication number Publication date
US20080216883A1 (en) 2008-09-11
DE112006000959A5 (de) 2008-01-24
WO2006122529A2 (de) 2006-11-23
US7842922B2 (en) 2010-11-30
WO2006122529A3 (de) 2007-01-25
JP2008541102A (ja) 2008-11-20
JP5308814B2 (ja) 2013-10-09

Similar Documents

Publication Publication Date Title
DE112006000959B4 (de) Thermopile Infrarot Sensorarray
DE102010042108B4 (de) Thermopile-Infrarot-Sensor in monolithischer Si-Mikromechanik
DE112013001011B4 (de) Thermopile Infrarot-Sensorstruktur mit hohem Füllgrad
EP3380820B1 (de) Thermischer infrarot-sensorarray im wafer-level-package
DE69736225T2 (de) Infrarot-bildwandler mit einem für zimmertemperatur geeigneten kapazitiven sensor
EP4191215B1 (de) Smd-fähiger thermopile infrarot sensor
EP0966660A1 (de) Thermopile-sensor und strahlungsthermometer mit einem thermopile-sensor
DE102017113023A1 (de) Thermopile Infrarot Einzelsensor für Temperaturmessungen oder zur Gasdetektion
DE69032785T2 (de) Strahlungsdetektormatrix mit strahlungsempfindlichen brücken
DE112009002170B4 (de) Planarer Thermosäulen-Infrarotsensor
EP3359932B1 (de) Hochauflösendes thermopile infrarot sensorarray mit monolithisch integrierter signalverarbeitung
JP2008541102A5 (enExample)
DE112013004275T5 (de) Gewundener IR-Sensor
US20030052271A1 (en) Micromachined infrared sensitive pixel and infrared imager including same
DE60007804T2 (de) Bolometrischer Detektor mit elektrischer Zwischenisolation und Verfahren zu seiner Herstellung
JP2018531399A6 (ja) モノリシックに集積された信号処理部を有する高解像度のサーモパイル赤外線センサアレイ
WO2004102140A1 (de) Infrarotsensor mit optimierter flächennutzung
DE60316114T2 (de) Rekonfigurierbare detektoranordnung
EP2153187B1 (de) Vorrichtung mit membranstruktur zur detektion von wärmestrahlung, verfahren zum herstellen und verwendung der vorrichtung
EP3997428B1 (de) Verfahren zum herstellen eines hochauflösenden thermischen infrarot-sensor arrays in einem vakuumgefüllten waferlevel gehäuse
EP2153188B1 (de) Vorrichtung mit sandwichstruktur zur detektion von wärmestrahlung, verfahren zum herstellen und verwendung der vorrichtung
DE19932308A1 (de) Sensor, insbesondere Thermosensor, und Verfahren zur Herstellung einer weitgehend freitragenden Membran
DE202006010085U1 (de) Vorrichtung zur Detektion elektromagnetischer Wellen
DE10058864B4 (de) Mikromechanikstruktur für integrierte Sensoranordnungen und Verfahren zur Herstellung einer Mikromechanikstruktur
WO2009043571A1 (de) Vorrichtung zur detektion von wärmestrahlung mit hoher auflösung und verfahren zu deren herstellung

Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
R018 Grant decision by examination section/examining division
R020 Patent grant now final

Effective date: 20120630

R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee