DE112004001026T5 - Verfahren und Vorrichtung zum Abscheiden von Materialien mit einstellbaren Eigenschaften und Ätzcharakteristiken - Google Patents

Verfahren und Vorrichtung zum Abscheiden von Materialien mit einstellbaren Eigenschaften und Ätzcharakteristiken Download PDF

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Publication number
DE112004001026T5
DE112004001026T5 DE112004001026T DE112004001026T DE112004001026T5 DE 112004001026 T5 DE112004001026 T5 DE 112004001026T5 DE 112004001026 T DE112004001026 T DE 112004001026T DE 112004001026 T DE112004001026 T DE 112004001026T DE 112004001026 T5 DE112004001026 T5 DE 112004001026T5
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DE
Germany
Prior art keywords
range
mhz
gas
pecvd system
frequency source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
DE112004001026T
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German (de)
English (en)
Inventor
Noriaki Fukiage
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
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Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of DE112004001026T5 publication Critical patent/DE112004001026T5/de
Withdrawn legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411—Cooling of the reaction chamber walls
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4557—Heated nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
DE112004001026T 2003-08-21 2004-08-18 Verfahren und Vorrichtung zum Abscheiden von Materialien mit einstellbaren Eigenschaften und Ätzcharakteristiken Withdrawn DE112004001026T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/644,958 US7371436B2 (en) 2003-08-21 2003-08-21 Method and apparatus for depositing materials with tunable optical properties and etching characteristics
US10/644,958 2003-08-21
PCT/US2004/026803 WO2005021832A2 (en) 2003-08-21 2004-08-18 Method and appartus for depositing materials with tunable properties

Publications (1)

Publication Number Publication Date
DE112004001026T5 true DE112004001026T5 (de) 2006-10-19

Family

ID=34194197

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112004001026T Withdrawn DE112004001026T5 (de) 2003-08-21 2004-08-18 Verfahren und Vorrichtung zum Abscheiden von Materialien mit einstellbaren Eigenschaften und Ätzcharakteristiken

Country Status (7)

Country Link
US (1) US7371436B2 (https=)
JP (1) JP4903567B2 (https=)
KR (1) KR101029286B1 (https=)
CN (1) CN100540733C (https=)
DE (1) DE112004001026T5 (https=)
TW (1) TWI248637B (https=)
WO (1) WO2005021832A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102019129789A1 (de) * 2019-11-05 2021-05-06 Aixtron Se Verfahren zum Abscheiden einer zweidimensionalen Schicht sowie CVD-Reaktor

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US20030000924A1 (en) * 2001-06-29 2003-01-02 Tokyo Electron Limited Apparatus and method of gas injection sequencing
US7077903B2 (en) * 2003-11-10 2006-07-18 International Business Machines Corporation Etch selectivity enhancement for tunable etch resistant anti-reflective layer
US20050221020A1 (en) * 2004-03-30 2005-10-06 Tokyo Electron Limited Method of improving the wafer to wafer uniformity and defectivity of a deposited dielectric film
US7497959B2 (en) 2004-05-11 2009-03-03 International Business Machines Corporation Methods and structures for protecting one area while processing another area on a chip
JP5015534B2 (ja) * 2006-09-22 2012-08-29 財団法人高知県産業振興センター 絶縁膜の成膜方法
US20080197015A1 (en) * 2007-02-16 2008-08-21 Terry Bluck Multiple-magnetron sputtering source with plasma confinement
JP2013515376A (ja) * 2009-12-22 2013-05-02 アプライド マテリアルズ インコーポレイテッド 連続プラズマを用いるｐｅｃｖｄ（プラズマ化学気相堆積）マルチステップ処理
US8741394B2 (en) * 2010-03-25 2014-06-03 Novellus Systems, Inc. In-situ deposition of film stacks
JP2014082354A (ja) * 2012-10-17 2014-05-08 Hitachi High-Technologies Corp プラズマ処理装置
US10170278B2 (en) * 2013-01-11 2019-01-01 Applied Materials, Inc. Inductively coupled plasma source
US9275869B2 (en) * 2013-08-02 2016-03-01 Lam Research Corporation Fast-gas switching for etching
US9899210B2 (en) * 2015-10-20 2018-02-20 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical vapor deposition apparatus and method for manufacturing semiconductor device using the same
CN110945159B (zh) 2017-07-28 2022-03-01 东京毅力科创株式会社 用于基板的后侧沉积的系统和方法
CN110106504B (zh) * 2019-04-04 2021-03-23 Tcl华星光电技术有限公司 一种蚀刻设备
SG11202112203VA (en) * 2019-05-15 2021-12-30 Applied Materials Inc Dynamic multi zone flow control for a processing system
CN115335976A (zh) * 2020-03-27 2022-11-11 朗姆研究公司 使用穿透光束激光传感器的原位晶片厚度和间隙监测
US20210381107A1 (en) * 2020-06-03 2021-12-09 Micron Technology, Inc. Material deposition systems, and related methods and microelectronic devices
US20220119952A1 (en) * 2020-10-20 2022-04-21 Applied Materials, Inc. Method of reducing defects in a multi-layer pecvd teos oxide film
US12300466B2 (en) * 2021-11-08 2025-05-13 Tokyo Electron Limited Plasma enhanced film formation method

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JPS5687328A (en) * 1979-12-18 1981-07-15 Matsushita Electronics Corp Semiconductor treatment device
US4960488A (en) 1986-12-19 1990-10-02 Applied Materials, Inc. Reactor chamber self-cleaning process
JPH04348031A (ja) 1990-12-28 1992-12-03 Mitsubishi Electric Corp 化学気相成長装置
JP3276514B2 (ja) * 1994-04-26 2002-04-22 東京エレクトロン株式会社 プラズマ処理装置
JPH09148322A (ja) 1995-11-22 1997-06-06 Sharp Corp シリコン酸化膜の成膜方法及びプラズマｃｖｄ成膜装置
KR100269308B1 (ko) * 1997-09-26 2000-10-16 윤종용 반도체장치의hsg실리콘막형성방법
KR19990030660A (ko) * 1997-10-02 1999-05-06 윤종용 전자빔을 이용한 반도체장치의 층간 절연막 형성방법
JP2000021860A (ja) * 1998-07-03 2000-01-21 Hitachi Ltd 半導体装置およびその製造方法
JP3818561B2 (ja) 1998-10-29 2006-09-06 エルジー フィリップス エルシーディー カンパニー リミテッド シリコン酸化膜の成膜方法および薄膜トランジスタの製造方法
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102019129789A1 (de) * 2019-11-05 2021-05-06 Aixtron Se Verfahren zum Abscheiden einer zweidimensionalen Schicht sowie CVD-Reaktor
WO2021089425A1 (de) 2019-11-05 2021-05-14 Aixtron Se Verfahren zum abscheiden einer zweidimensionalen schicht sowie cvd-reaktor

Also Published As

Publication number Publication date
WO2005021832A2 (en) 2005-03-10
CN1839218A (zh) 2006-09-27
TW200514145A (en) 2005-04-16
KR101029286B1 (ko) 2011-04-18
US7371436B2 (en) 2008-05-13
JP4903567B2 (ja) 2012-03-28
TWI248637B (en) 2006-02-01
KR20060118405A (ko) 2006-11-23
JP2007502917A (ja) 2007-02-15
US20050039681A1 (en) 2005-02-24
CN100540733C (zh) 2009-09-16
WO2005021832A3 (en) 2005-09-22

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