WO2021089425A1 - Verfahren zum abscheiden einer zweidimensionalen schicht sowie cvd-reaktor - Google Patents
Verfahren zum abscheiden einer zweidimensionalen schicht sowie cvd-reaktor Download PDFInfo
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- WO2021089425A1 WO2021089425A1 PCT/EP2020/080509 EP2020080509W WO2021089425A1 WO 2021089425 A1 WO2021089425 A1 WO 2021089425A1 EP 2020080509 W EP2020080509 W EP 2020080509W WO 2021089425 A1 WO2021089425 A1 WO 2021089425A1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/305—Sulfides, selenides, or tellurides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
Definitions
- the invention relates to a method for depositing a two-dimensional layer on a substrate in a CVD reactor, in which a process gas is fed into a gas distribution chamber of a gas inlet element by means of a feed line, which process gas has gas outlet openings which open into a process chamber in which the process gas or decomposition products of the process gas in the process chamber are brought to a surface of a substrate, and in which the substrate is brought to a process temperature by means of a heating device, so that the process gas in the process chamber reacts chemically in such a way that the two-dimensional Layer is deposited.
- the invention also relates to a device for depositing a two-dimensional layer on a substrate with a CVD reactor, which has a gas inlet element with a supply line opening into a gas distribution chamber, a process chamber into which the gas outlet openings of the gas distribution chambers open, and one that can be heated by a heating device Susceptor for receiving the substrate, wherein the feed line is connected to a gas mixing system in which at least one inert gas source or a diluent gas from a diluent gas source and from at least one reactive gas source a reactive gas, which has the property, brought into a heated process chamber to react chemically in such a way that a two-dimensional layer is deposited on the substrate.
- the invention also relates to the use of a CVD reactor for depositing a two-dimensional layer on a substrate.
- DE 102013111 791 A1 describes the deposition of two-dimensional layers using a CVD reactor in which the gas inlet element is a showerhead.
- a reactor in which a showerhead is used as the gas inlet element is known from WO 2017/029470 A1.
- CVD reactors are known from DE 102011 056589 A1, DE 102010016471 A1 and DE 102004007984 A1, DE 10 2009043840 A1, DE 112004001 026 T5, EP 1255876 B1, DE 102005055468 A1, US 2006/0191637 A1, DE 102011 002145 A1.
- WO 2014/066100 A1 describes a showerhead with a gas outlet surface that has two gas outlet zones.
- the invention is based on the object of specifying a CVD reactor with which a plurality of mutually different two-dimensional layers can be deposited adjacent, one above the other or next to one another, and also specifying a method relating to this.
- a CVD reactor according to the invention has two volumes which are separated from one another and which each form a gas distribution chamber.
- a first process gas can be fed into a first gas distribution chamber.
- the process gas can be a gas mixture of several, for example two, reactive gases.
- the process gas can preferably only be a reactive gas.
- This first reactive gas can be used to deposit a first two-dimensional layer.
- the second gas distribution chamber is designed so that a second process gas can be fed into it in order to deposit a second two-dimensional layer.
- the second process gas is different from the first process gas and can consist of one or more reactive gases.
- the second process gas can preferably consist of only one reactive gas.
- a different process gas in particular only one reactive gas or a mixture of several, in particular two, reactive gases is fed one after the other into one and the other gas distribution chamber.
- a process gas is preferably always fed into only one of the several gas distribution chambers.
- a dilution gas which can be an inert gas, for example a noble gas such as argon or a reducing gas such as hydrogen, is fed into the other of the plurality of gas distribution chambers.
- the gas inlet element has at least two gas distribution chambers which are separate from one another and which are each supplied with a supply line with gases or gas mixtures which differ from one another.
- the device can also have more than two gas distribution chambers, each of which can be fed with a supply line.
- the gases emerge simultaneously from different gas outlet openings, each assigned to one of the gas distribution chambers.
- a CVD reactor according to the invention can have gas distribution chambers which are arranged vertically one above the other and which can each extend over the entire gas outlet surface of the gas inlet element.
- the gas outlet surface can have a circular disk shape and evenly distributed gas outlet openings have openings.
- the gas outlet openings are connected to the various gas distribution chambers, one opening in each case being flow-connected to only one gas distribution chamber.
- the process gas can flow through the gas outlet openings into the process chamber of the CVD reactor, where it reacts chemically in such a way that a two-dimensional layer is deposited on the surface of a substrate, which can be a sapphire substrate, a silicon substrate or the like.
- a substrate which can be a sapphire substrate, a silicon substrate or the like.
- Each gas distribution chamber is flow-connected to the gas outlet surface by a multiplicity of gas outlet openings, the gas outlet openings being arranged essentially evenly distributed over the gas outlet surface.
- an inert gas or diluent gas is fed into a first of the gas distribution chambers and a reactive gas is fed into a second of the gas distribution chambers, which reactive gas is broken down pyrolytically or otherwise, in particular by supplying energy, with the decomposition products forming a two-dimensional layer form on the substrate.
- a different reactive gas can be fed into each of the gas distribution chambers. In the process chamber, the reactive gases can chemically react with one another and form a two-dimensional layer.
- a gas of a transition metal for example tungsten, molybdenum or the like
- a gas of the sixth main group for example sulfur, selenium or tellurium
- the two-dimensional layers can be transition metal chalcogenides.
- the CVD reactor has a gas outlet plate facing the process chamber, which on its rear side adjoins a cooling chamber through which a cooling medium can flow.
- a first gas distribution chamber into which a first gas is fed can be located above the cooling chamber. With tubes that cross the cooling chamber, the gas distribution chamber is connected to the gas outlet surface of the gas outlet plate of the gas inlet element.
- First tubes alternate with second tubes in the lateral direction, the first tubes connecting the first gas distribution chamber to the gas outlet surface and the second tubes crossing both the cooling chamber and the first gas distribution chamber and connecting a second gas distribution chamber arranged above the first gas distribution chamber to the gas outlet plate .
- the gas outlet element can, however, also have a configuration as described in DE 102013101534 A1, DE 102009043840 A1 or DE 102007026349 A1. The content of these documents is therefore fully included in the disclosure content of this application.
- the bottom of the process chamber is formed by a susceptor, which can be heated to a process temperature of preferably over 1000 ° C. with a heating device.
- a mixture of reactive gases can also be fed into one of the gas distribution chambers, for example for the deposition of tungsten sulfide.
- the gas mixture can consist of tungsten hexacarbonyl W (CO) 6 and di-tert-butyl sulfide S (C4H9) 2.
- a multilayer structure is deposited on a sapphire substrate, the multilayer structure having at least one layer or several layers of hexagonal boron nitride (hBN), which is, for example, 5 nm thick.
- hBN hexagonal boron nitride
- a graphene layer or several graphene layers (multilayer graphene) can be deposited on top of one another.
- An hBN layer for example 3 nm thick, can in turn be deposited on the graphene layer.
- FIG. 2 shows section II in FIG. 1.
- the figures show a CVD reactor 1 which has a gas-tight housing and in which a gas inlet element 2 is located. Below the gas inlet element 2 there is a process chamber 3, the bottom of which forms a susceptor 5 which can consist of graphite or coated graphite.
- the susceptor 5 can be heated from below by means of a heating device 6.
- the heating device can be resistance heating, infrared heating or inductive RF heating.
- the gas outlet element 7 can surround the susceptor 5.
- the top of the susceptor 5 facing the process chamber 3 has a support surface 15 on which a substrate 4 rests, which can consist of sapphire, silicon, a metal or the like.
- the gas inlet member 2 has the shape of a shower head (showerhead). Inside the gas inlet element 2 there is a cooling chamber 8 between a gas outlet plate 9 and an intermediate plate 23. Above the cooling chamber 8 there is a gas distribution chamber 21 between the intermediate plate 23 and an intermediate plate 13 another gas distribution chamber 11. In the gas distribution chamber 21 opens a feed line 20 into which gas can be fed from outside the CVD reactor. A feed line 10, into which gas can be fed from outside the CVD reactor 1, opens into the gas distribution chamber 11.
- the gas distribution chamber 11 is connected to the process chamber 3 by means of a large number of tubes 12 which are evenly distributed over the gas outlet surface 25 of the gas outlet plate 9.
- the tubes 12 open into a gas outlet opening 14 through which the gas fed into the gas distribution chamber 11 can flow into the process chamber 3.
- the gas distribution chamber 21 is connected to the gas outlet surface 25 by means of a plurality of tubes 22, so that a gas fed into the gas distribution chamber 21 can enter the process chamber through the gas outlet openings 24 assigned to the tubes 22.
- a feed line 8 ′ through which a coolant can be fed into the cooling chamber 8, opens into the cooling chamber 8.
- the coolant can flow out of the cooling chamber 8 again from the discharge line 8 ′′.
- the reference numeral 19 denotes a pyrometer with which the surface of the substrate 4 can be observed during growth in order to determine the surface temperature.
- the optical beam path 18 of the pyrometer 19 runs through a window 17 in the cover plate 16 that is transparent to the wavelength of the pyrometer 19 and through one of the tubes 12 '.
- the gas mixing system has a controller 29, which can be a control computer. With the controller 29 various mass flow controllers 30, 30 '; 37, 37 '; 41, 41 'are controlled. With the controller 29, the temperature of a temperature control bath (thermostatic bath) can also be set, in which there is a source 32, 32 'of a liquid or solid starting material, which is designed as a Bubbier 32, 32'.
- the reference number 31, 31 'de notes a concentration measuring device with which the concentration of the vapor within a carrier gas flow can be determined.
- Reference numeral 39, 39 denotes an inert gas source or diluent gas source which provides an inert gas or a diluent gas, for example a noble gas or a reducing gas, for example hydrogen or a mixture of these gases.
- the reference Z iffern 40, 40 designate source of a reactive gas, for example methane or other hydrocarbon.
- the bubblers 32, 32 'reactive gases can be generated.
- an inert or diluent gas is fed into the Bubbier 32, 32 'from the gas source 39, 39' via the mass flow regulator 30, 30 '.
- the concentration measuring device 31, 31 ' can be used to measure the downstream vapor concentration in the carrier gas flow.
- the reactive gas is passed into the vent line 35 until a gas flow has stabilized.
- the switch 33, 33 ′ is switched over so that the stabilized gas flow can be fed through the run line 34, 34 ′ into one of the gas distribution chambers 11, 21.
- two sources are shown, each with a powder or a liquid reactive gas can be generated. Several such sources can be provided in exemplary embodiments that are not shown.
- an inert or diluent gas from the inert or diluent gas source 39 can be fed into the gas distribution chamber 11, 21 via the valve 36, 36 'and the mass flow controller 37, 37' be fed in.
- a starting material available in gaseous form for example methane or another hydrocarbon, can be taken from a gas source 40, 40 'and fed into the gas distribution chamber 11, 21 by means of the mass flow controller 41, 41'.
- Borazine can, if it is available above the boiling point, be provided with a gas source. Otherwise, borazine can be made available as gas or steam via a bubbler 32, 32 '.
- a reactive gas or a mixture of two reactive gases is alternately fed into one of the gas distribution chambers 11, 21 and an inert gas or a diluent gas is fed into the other of the gas distribution chambers 11, 21.
- a multilayer structure made of hBN and graphene can be deposited sequentially.
- a graphene layer or a multiplicity of graphene layers can be embedded between two hBN layers, in particular monolayer layers.
- lateral heterostructures can also be deposited, with different two-dimensional layers being deposited laterally next to one another on a substrate surface or a surface of an already deposited layer.
- a first starting material can be fed into a first one of the gas distribution chambers 11, 21 and a second starting material can be fed into a second one of the gas distribution chambers 11, 21 or it can also be a process gas, which is a mixture of two, into one of the gas distribution chambers reactive gases is to be fed.
- one of the reactive gases can be tungsten-hexacarbonyl, which can be made available via a Bubbier 32, 32 '.
- the other reactive gas can be a sulfur, tellurium or selenium compound.
- starting materials can be fed into different gas distribution chambers 11, 21 or into the same gas distribution chamber 11, 21.
- the invention relates to all material pairings that are mentioned in DE 102013111791 A1.
- the disclosure content of this document is included in its entirety in this application.
- a method or a use which is characterized in that an inert gas or a diluent gas in a first 11 of the gas distribution chambers 11, 21 and a reactive gas or a gas mixture of a gas in a second 21 of the gas distribution chambers 11, 21, containing the elements from which the two-dimensional layer is built up, which reactive gas is decomposed in the process chamber 3, for example pyrolytically, the decomposition products forming a two-dimensional layer, or that reactive gases different from one another are introduced into the gas distribution chambers 11, 21 are fed, which react chemically with one another in the process chamber 3 and form a two-dimensional layer.
- a method or a use which is characterized in that on a first two-dimensional layer deposited in a first step, when it is deposited through the first gas distribution chamber 11 and the gas outlet openings 14 assigned to it, an inert gas or a diluent gas and through the second gas distribution chamber 21 and the gas outlet openings 24 assigned to it, a first reactive gas or a gas mixture, which in particular contains gases with the elements of the two-dimensional layer, is fed into the process chamber, in a second step a second two-dimensional layer is deposited, which is deposited by the first gas distribution chamber 1 and the gas outlet openings 14 assigned to it, a second reactive gas is fed in, from the first reactive gas ven gas is different, and an inert gas or a diluent gas is fed into the process chamber through the second gas distribution chamber 21 and the gas outlet openings 24 assigned to it, it being provided in particular that the two steps are repeated one or more times.
- a method or a use which is characterized in that two-dimensional layers different from one another are deposited on one another in several successive steps, the reactive gases used in particular being fed alternately into different gas distribution chambers 11, 21.
- a device which is characterized in that the gas inlet member 2 has two separate gas distribution chambers 11, 21 each with a feed line 10, 20, each of the two feed lines 10, 20 optionally with an inert gas source, a diluent gas source or one of the reactive gas sources are flow connectable.
- a method, a use or a device which are characterized by a switching device 33, 33 ';'36, 36 '; 38, 38 ', with which the inert gas source or diluent gas source 39, 39' or one of the reactive gas sources 32, 32 '; 40, 40 'can be brought into a flow connection with a gas distribution chamber 11, 21.
- a method, a use or a device which is characterized in that the reactive gas sources 32, 32 'optionally or alternately with a vent line 35, by means of which the reactive gases flow past the process chamber 3 or are directed, or with a run line 34, 34 ′, with which the reactive gases can be introduced into the process chamber 3.
- a method, a use or a device which is characterized in that the gas inlet element 2 is a showerhead with a gas outlet surface 25 in which the gas outlet openings 14, 24 are arranged, in which two are separated from one another by an intermediate plate 13 Gas distribution chambers 11, 21 are arranged, each of which is in flow connection with tubes 12, 12 ', 22 with the gas outlet openings 14, 24 evenly distributed over the gas outlet surface 25 and / or that the material of the two-dimensional layer is graphene, hBN, or a transition metal dichalcogenide is, in particular M0S2, WS2, MoSe2 or WSe2 and / or that the reactive gas or a reactive gas mixture contains a carbon compound, for example methane, or a boron compound, for example borazine and / or that a first reactive gas is an element of a transition metal and in particular a molybdenum compound or a tungsten compound, and that a two ites reactive gas contains an element of main group VI and in particular a sulfur compound, for
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Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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KR1020227017894A KR20220097430A (ko) | 2019-11-05 | 2020-10-30 | 이차원 층을 증착하기 위한 방법 및 cvd-반응기 |
EP20807295.9A EP4055205A1 (de) | 2019-11-05 | 2020-10-30 | Verfahren zum abscheiden einer zweidimensionalen schicht sowie cvd-reaktor |
US17/773,523 US20220403519A1 (en) | 2019-11-05 | 2020-10-30 | Method for depositing a two-dimensional coating and cvd reactor |
JP2022526179A JP2023506373A (ja) | 2019-11-05 | 2020-10-30 | 2次元コーティングを堆積するための方法及びcvdリアクタ |
CN202080090930.4A CN114901862A (zh) | 2019-11-05 | 2020-10-30 | 用于沉积二维的层的方法以及cvd反应器 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE102019129789.3 | 2019-11-05 | ||
DE102019129789.3A DE102019129789A1 (de) | 2019-11-05 | 2019-11-05 | Verfahren zum Abscheiden einer zweidimensionalen Schicht sowie CVD-Reaktor |
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WO2021089425A1 true WO2021089425A1 (de) | 2021-05-14 |
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PCT/EP2020/080509 WO2021089425A1 (de) | 2019-11-05 | 2020-10-30 | Verfahren zum abscheiden einer zweidimensionalen schicht sowie cvd-reaktor |
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US (1) | US20220403519A1 (de) |
EP (1) | EP4055205A1 (de) |
JP (1) | JP2023506373A (de) |
KR (1) | KR20220097430A (de) |
CN (1) | CN114901862A (de) |
DE (1) | DE102019129789A1 (de) |
WO (1) | WO2021089425A1 (de) |
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DE102020122677A1 (de) | 2020-08-31 | 2022-03-03 | Aixtron Se | Verfahren zum Abscheiden einer zweidimensionalen Schicht |
Citations (18)
Publication number | Priority date | Publication date | Assignee | Title |
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EP1255876B1 (de) | 2000-02-16 | 2003-07-30 | Aixtron AG | Kondensationsbeschichtungsverfahren |
US20050136657A1 (en) * | 2002-07-12 | 2005-06-23 | Tokyo Electron Limited | Film-formation method for semiconductor process |
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DE102011056589A1 (de) | 2011-07-12 | 2013-01-17 | Aixtron Se | Gaseinlassorgan eines CVD-Reaktors |
WO2014066100A1 (en) | 2012-10-24 | 2014-05-01 | Applied Materials, Inc. | Showerhead designs of a hwcvd chamber |
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DE102019129789A1 (de) | 2021-05-06 |
JP2023506373A (ja) | 2023-02-16 |
KR20220097430A (ko) | 2022-07-07 |
US20220403519A1 (en) | 2022-12-22 |
CN114901862A (zh) | 2022-08-12 |
EP4055205A1 (de) | 2022-09-14 |
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