DE1113035B - Flaechendiode mit einem scharfen pn-UEbergang und Tunneleffekt sowie Verfahren zu ihrer Herstellung - Google Patents
Flaechendiode mit einem scharfen pn-UEbergang und Tunneleffekt sowie Verfahren zu ihrer HerstellungInfo
- Publication number
- DE1113035B DE1113035B DER27170A DER0027170A DE1113035B DE 1113035 B DE1113035 B DE 1113035B DE R27170 A DER27170 A DE R27170A DE R0027170 A DER0027170 A DE R0027170A DE 1113035 B DE1113035 B DE 1113035B
- Authority
- DE
- Germany
- Prior art keywords
- charge carriers
- concentration
- free charge
- semiconductor material
- diode according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000000694 effects Effects 0.000 title claims description 17
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000000034 method Methods 0.000 title claims description 8
- 230000008569 process Effects 0.000 title description 5
- 239000004065 semiconductor Substances 0.000 claims description 55
- 239000002800 charge carrier Substances 0.000 claims description 52
- 239000000463 material Substances 0.000 claims description 29
- 229910052732 germanium Inorganic materials 0.000 claims description 25
- 229910045601 alloy Inorganic materials 0.000 claims description 20
- 239000000956 alloy Substances 0.000 claims description 20
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 16
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 5
- 239000003574 free electron Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 108010023321 Factor VII Proteins 0.000 claims description 2
- 239000012535 impurity Substances 0.000 description 14
- 239000013078 crystal Substances 0.000 description 10
- 230000004044 response Effects 0.000 description 10
- 239000011324 bead Substances 0.000 description 8
- 230000007704 transition Effects 0.000 description 8
- 239000000969 carrier Substances 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 5
- 229910052785 arsenic Inorganic materials 0.000 description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 5
- 229910052733 gallium Inorganic materials 0.000 description 5
- 239000006187 pill Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 229910052725 zinc Inorganic materials 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910000978 Pb alloy Inorganic materials 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000002500 effect on skin Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 150000002259 gallium compounds Chemical class 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 150000002472 indium compounds Chemical class 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 230000036316 preload Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/70—Tunnel-effect diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US789286A US3131096A (en) | 1959-01-27 | 1959-01-27 | Semiconducting devices and methods of preparation thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1113035B true DE1113035B (de) | 1961-08-24 |
Family
ID=25147183
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DER27170A Pending DE1113035B (de) | 1959-01-27 | 1960-01-23 | Flaechendiode mit einem scharfen pn-UEbergang und Tunneleffekt sowie Verfahren zu ihrer Herstellung |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US3131096A (en:Method) |
| BE (1) | BE586899A (en:Method) |
| CH (1) | CH403989A (en:Method) |
| DE (1) | DE1113035B (en:Method) |
| DK (1) | DK101428C (en:Method) |
| ES (1) | ES255309A1 (en:Method) |
| FR (1) | FR1246041A (en:Method) |
| GB (1) | GB942453A (en:Method) |
| NL (1) | NL247746A (en:Method) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1194504B (de) * | 1962-09-14 | 1965-06-10 | Siemens Ag | Verfahren zur Herstellung von Halbleiter-anordnungen |
| US3211923A (en) * | 1962-03-13 | 1965-10-12 | Westinghouse Electric Corp | Integrated semiconductor tunnel diode and resistance |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL253079A (en:Method) * | 1959-08-05 | |||
| GB914832A (en) * | 1959-12-11 | 1963-01-09 | Gen Electric | Improvements in semiconductor devices and method of fabricating the same |
| US3276925A (en) * | 1959-12-12 | 1966-10-04 | Nippon Electric Co | Method of producing tunnel diodes by double alloying |
| DE1175797B (de) * | 1960-12-22 | 1964-08-13 | Standard Elektrik Lorenz Ag | Verfahren zum Herstellen von elektrischen Halb-leiterbauelementen |
| DE1185729B (de) * | 1961-03-01 | 1965-01-21 | Siemens Ag | Esaki-Diode mit Oberflaechenschutz des pn-UEbergangs |
| DE1240996B (de) * | 1961-03-24 | 1967-05-24 | Siemens Ag | Verfahren zum Herstellen eines beiderseits hochdotierten pn-UEbergangs fuer Halbleiteranordnungen |
| US3258660A (en) * | 1962-06-20 | 1966-06-28 | Tunnel diode devices with junctions formed on predetermined paces | |
| US3259815A (en) * | 1962-06-28 | 1966-07-05 | Texas Instruments Inc | Gallium arsenide body containing copper |
| NL295683A (en:Method) * | 1962-07-24 | |||
| NL299675A (en:Method) * | 1962-10-24 | 1900-01-01 | ||
| DE1489245B1 (de) * | 1963-05-20 | 1970-10-01 | Rca Corp | Verfahren zum Herstellen von Flaechentransistoren aus III-V-Verbindungen |
| US3355335A (en) * | 1964-10-07 | 1967-11-28 | Ibm | Method of forming tunneling junctions for intermetallic semiconductor devices |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2847335A (en) * | 1953-09-15 | 1958-08-12 | Siemens Ag | Semiconductor devices and method of manufacturing them |
| US2936256A (en) * | 1954-06-01 | 1960-05-10 | Gen Electric | Semiconductor devices |
| US2843515A (en) * | 1955-08-30 | 1958-07-15 | Raytheon Mfg Co | Semiconductive devices |
| NL216979A (en:Method) * | 1956-05-18 | |||
| US2878152A (en) * | 1956-11-28 | 1959-03-17 | Texas Instruments Inc | Grown junction transistors |
| NL224440A (en:Method) * | 1957-03-05 | |||
| US2929753A (en) * | 1957-04-11 | 1960-03-22 | Beckman Instruments Inc | Transistor structure and method |
| US2974072A (en) * | 1958-06-27 | 1961-03-07 | Ibm | Semiconductor connection fabrication |
-
0
- NL NL247746D patent/NL247746A/xx unknown
-
1959
- 1959-01-27 US US789286A patent/US3131096A/en not_active Expired - Lifetime
-
1960
- 1960-01-01 GB GB126/60A patent/GB942453A/en not_active Expired
- 1960-01-19 CH CH56060A patent/CH403989A/de unknown
- 1960-01-23 DE DER27170A patent/DE1113035B/de active Pending
- 1960-01-25 BE BE586899A patent/BE586899A/fr unknown
- 1960-01-26 FR FR816674A patent/FR1246041A/fr not_active Expired
- 1960-01-26 DK DK29860AA patent/DK101428C/da active
- 1960-01-26 ES ES0255309A patent/ES255309A1/es not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3211923A (en) * | 1962-03-13 | 1965-10-12 | Westinghouse Electric Corp | Integrated semiconductor tunnel diode and resistance |
| DE1194504B (de) * | 1962-09-14 | 1965-06-10 | Siemens Ag | Verfahren zur Herstellung von Halbleiter-anordnungen |
| DE1194504C2 (de) * | 1962-09-14 | 1966-03-03 | Siemens Ag | Verfahren zur Herstellung von Halbleiter-anordnungen |
Also Published As
| Publication number | Publication date |
|---|---|
| ES255309A1 (es) | 1960-08-16 |
| CH403989A (de) | 1965-12-15 |
| US3131096A (en) | 1964-04-28 |
| FR1246041A (fr) | 1960-11-10 |
| BE586899A (fr) | 1960-05-16 |
| NL247746A (en:Method) | |
| DK101428C (da) | 1965-04-05 |
| GB942453A (en) | 1963-11-20 |
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