NL216979A - - Google Patents

Info

Publication number
NL216979A
NL216979A NL216979DA NL216979A NL 216979 A NL216979 A NL 216979A NL 216979D A NL216979D A NL 216979DA NL 216979 A NL216979 A NL 216979A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL216979A publication Critical patent/NL216979A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
NL216979D 1956-05-18 NL216979A (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US585670A US2870052A (en) 1956-05-18 1956-05-18 Semiconductive device and method for the fabrication thereof

Publications (1)

Publication Number Publication Date
NL216979A true NL216979A (en:Method)

Family

ID=24342444

Family Applications (1)

Application Number Title Priority Date Filing Date
NL216979D NL216979A (en:Method) 1956-05-18

Country Status (5)

Country Link
US (1) US2870052A (en:Method)
DE (1) DE1130522B (en:Method)
FR (1) FR1173400A (en:Method)
GB (1) GB826063A (en:Method)
NL (1) NL216979A (en:Method)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE571348A (en:Method) * 1957-09-20 1900-01-01
US3033714A (en) * 1957-09-28 1962-05-08 Sony Corp Diode type semiconductor device
US2987658A (en) * 1958-01-10 1961-06-06 Philco Corp Improved semiconductor diode
US3076731A (en) * 1958-08-04 1963-02-05 Hughes Aircraft Co Semiconductor devices and method of making the same
US2953488A (en) * 1958-12-26 1960-09-20 Shockley William P-n junction having minimum transition layer capacitance
NL247746A (en:Method) * 1959-01-27
US3099588A (en) * 1959-03-11 1963-07-30 Westinghouse Electric Corp Formation of semiconductor transition regions by alloy vaporization and deposition
US3156592A (en) * 1959-04-20 1964-11-10 Sprague Electric Co Microalloying method for semiconductive device
US3079287A (en) * 1959-09-01 1963-02-26 Texas Instruments Inc Improved grown junction transistor and method of making same
DE1292253B (de) * 1959-09-26 1969-04-10 Telefunken Patent Halbleiteranordnung
US3109758A (en) * 1959-10-26 1963-11-05 Bell Telephone Labor Inc Improved tunnel diode
NL259446A (en:Method) * 1959-12-30 1900-01-01
DE1154876B (de) * 1960-08-04 1963-09-26 Telefunken Patent Transistor, insbesondere Schalttransistor, und Verfahren zu seinem Herstellen
US3225272A (en) * 1961-01-23 1965-12-21 Bendix Corp Semiconductor triode
NL260810A (en:Method) * 1961-02-03
GB1074287A (en) * 1963-12-13 1967-07-05 Mullard Ltd Improvements in and relating to semiconductor devices

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE536149A (en:Method) *
DE894293C (de) * 1951-06-29 1953-10-22 Western Electric Co Verfahren zur Herstellung eines Kristalls aus Halbleitermaterial
US2842723A (en) * 1952-04-15 1958-07-08 Licentia Gmbh Controllable asymmetric electrical conductor systems
US2750542A (en) * 1953-04-02 1956-06-12 Rca Corp Unipolar semiconductor devices
BE539908A (en:Method) * 1954-07-19

Also Published As

Publication number Publication date
FR1173400A (fr) 1959-02-24
GB826063A (en) 1959-12-23
DE1130522B (de) 1962-05-30
US2870052A (en) 1959-01-20

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