NL247746A - - Google Patents

Info

Publication number
NL247746A
NL247746A NL247746DA NL247746A NL 247746 A NL247746 A NL 247746A NL 247746D A NL247746D A NL 247746DA NL 247746 A NL247746 A NL 247746A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL247746A publication Critical patent/NL247746A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60Impurity distributions or concentrations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00Diodes
    • H10D8/70Tunnel-effect diodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Bipolar Transistors (AREA)
NL247746D 1959-01-27 NL247746A (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US789286A US3131096A (en) 1959-01-27 1959-01-27 Semiconducting devices and methods of preparation thereof

Publications (1)

Publication Number Publication Date
NL247746A true NL247746A (en:Method)

Family

ID=25147183

Family Applications (1)

Application Number Title Priority Date Filing Date
NL247746D NL247746A (en:Method) 1959-01-27

Country Status (9)

Country Link
US (1) US3131096A (en:Method)
BE (1) BE586899A (en:Method)
CH (1) CH403989A (en:Method)
DE (1) DE1113035B (en:Method)
DK (1) DK101428C (en:Method)
ES (1) ES255309A1 (en:Method)
FR (1) FR1246041A (en:Method)
GB (1) GB942453A (en:Method)
NL (1) NL247746A (en:Method)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL253079A (en:Method) * 1959-08-05
GB914832A (en) * 1959-12-11 1963-01-09 Gen Electric Improvements in semiconductor devices and method of fabricating the same
US3276925A (en) * 1959-12-12 1966-10-04 Nippon Electric Co Method of producing tunnel diodes by double alloying
DE1175797B (de) * 1960-12-22 1964-08-13 Standard Elektrik Lorenz Ag Verfahren zum Herstellen von elektrischen Halb-leiterbauelementen
DE1185729B (de) * 1961-03-01 1965-01-21 Siemens Ag Esaki-Diode mit Oberflaechenschutz des pn-UEbergangs
DE1240996B (de) * 1961-03-24 1967-05-24 Siemens Ag Verfahren zum Herstellen eines beiderseits hochdotierten pn-UEbergangs fuer Halbleiteranordnungen
US3211923A (en) * 1962-03-13 1965-10-12 Westinghouse Electric Corp Integrated semiconductor tunnel diode and resistance
US3258660A (en) * 1962-06-20 1966-06-28 Tunnel diode devices with junctions formed on predetermined paces
US3259815A (en) * 1962-06-28 1966-07-05 Texas Instruments Inc Gallium arsenide body containing copper
NL295683A (en:Method) * 1962-07-24
NL297836A (en:Method) * 1962-09-14
NL299675A (en:Method) * 1962-10-24 1900-01-01
DE1489245B1 (de) * 1963-05-20 1970-10-01 Rca Corp Verfahren zum Herstellen von Flaechentransistoren aus III-V-Verbindungen
US3355335A (en) * 1964-10-07 1967-11-28 Ibm Method of forming tunneling junctions for intermetallic semiconductor devices

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2847335A (en) * 1953-09-15 1958-08-12 Siemens Ag Semiconductor devices and method of manufacturing them
US2936256A (en) * 1954-06-01 1960-05-10 Gen Electric Semiconductor devices
US2843515A (en) * 1955-08-30 1958-07-15 Raytheon Mfg Co Semiconductive devices
NL216979A (en:Method) * 1956-05-18
US2878152A (en) * 1956-11-28 1959-03-17 Texas Instruments Inc Grown junction transistors
NL224440A (en:Method) * 1957-03-05
US2929753A (en) * 1957-04-11 1960-03-22 Beckman Instruments Inc Transistor structure and method
US2974072A (en) * 1958-06-27 1961-03-07 Ibm Semiconductor connection fabrication

Also Published As

Publication number Publication date
DE1113035B (de) 1961-08-24
ES255309A1 (es) 1960-08-16
CH403989A (de) 1965-12-15
US3131096A (en) 1964-04-28
FR1246041A (fr) 1960-11-10
BE586899A (fr) 1960-05-16
DK101428C (da) 1965-04-05
GB942453A (en) 1963-11-20

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