BE639066A - - Google Patents

Info

Publication number
BE639066A
BE639066A BE639066DA BE639066A BE 639066 A BE639066 A BE 639066A BE 639066D A BE639066D A BE 639066DA BE 639066 A BE639066 A BE 639066A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of BE639066A publication Critical patent/BE639066A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/002—Amphoteric doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
BE639066D 1962-10-24 BE639066A (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US232846A US3245002A (en) 1962-10-24 1962-10-24 Stimulated emission semiconductor devices

Publications (1)

Publication Number Publication Date
BE639066A true BE639066A (en:Method) 1900-01-01

Family

ID=22874858

Family Applications (1)

Application Number Title Priority Date Filing Date
BE639066D BE639066A (en:Method) 1962-10-24

Country Status (7)

Country Link
US (1) US3245002A (en:Method)
BE (1) BE639066A (en:Method)
DE (1) DE1180458B (en:Method)
FR (1) FR1385449A (en:Method)
GB (1) GB1044586A (en:Method)
NL (2) NL139425B (en:Method)
SE (1) SE317453B (en:Method)

Families Citing this family (76)

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NL299169A (en:Method) * 1962-10-30
US3341937A (en) * 1963-02-20 1967-09-19 Ibm Crystalline injection laser device manufacture
DE1291029B (de) * 1963-02-21 1969-03-20 Siemens Ag Nach dem Maser- bzw. Laserprinzip arbeitende Anordnung fuer Mikrowellen- bzw. Lichtstrahlung
US3349475A (en) * 1963-02-21 1967-10-31 Ibm Planar injection laser structure
US3354406A (en) * 1963-04-22 1967-11-21 Rca Corp Element and apparatus for generating coherent radiation
US3312910A (en) * 1963-05-06 1967-04-04 Franklin F Offner Frequency modulation of radiation emitting p-n junctions
US3340479A (en) * 1963-06-14 1967-09-05 Bell Telephone Labor Inc Laser tunable by junction coupling
US3363195A (en) * 1963-07-01 1968-01-09 Bell Telephone Labor Inc Junction diode maser
US3330991A (en) * 1963-07-12 1967-07-11 Raytheon Co Non-thermionic electron emission devices
US3309553A (en) * 1963-08-16 1967-03-14 Varian Associates Solid state radiation emitters
US3353114A (en) * 1963-09-09 1967-11-14 Boeing Co Tunnel-injection light emitting devices
US3330957A (en) * 1963-09-19 1967-07-11 Russell W Runnels Piezoelectric frequency modulated optical maser
US3483397A (en) * 1963-10-16 1969-12-09 Westinghouse Electric Corp Apparatus and method for controlling the output of a light emitting semiconductor device
US3412344A (en) * 1963-10-30 1968-11-19 Rca Corp Semiconductor plasma laser
US3305685A (en) * 1963-11-07 1967-02-21 Univ California Semiconductor laser and method
US3349476A (en) * 1963-11-26 1967-10-31 Ibm Formation of large area contacts to semiconductor devices
DE1439316C3 (de) * 1963-12-13 1975-07-31 Siemens Ag, 1000 Berlin Und 8000 Muenchen Anordnung zur Erzeugung und/oder Verstärkung elektromagnetischer Strahlung
NL143402B (nl) * 1964-02-12 1974-09-16 Philips Nv Halfgeleiderinrichting met een een halfgeleiderlichaam bevattende gestuurde injectierecombinatiestralingsbron.
US3359508A (en) * 1964-02-19 1967-12-19 Gen Electric High power junction laser structure
US3305412A (en) * 1964-02-20 1967-02-21 Hughes Aircraft Co Method for preparing a gallium arsenide diode
US3300671A (en) * 1964-03-10 1967-01-24 Gen Electric Surface-adjacent junction electroluminescent device
US3482189A (en) * 1964-03-24 1969-12-02 Gen Electric Frequency control of semiconductive junction lasers by application of force
US3327136A (en) * 1964-03-30 1967-06-20 Abraham George Variable gain tunneling
GB1053033A (en:Method) * 1964-04-03
US3404304A (en) * 1964-04-30 1968-10-01 Texas Instruments Inc Semiconductor junction device for generating optical radiation
US3432221A (en) * 1964-08-05 1969-03-11 Ibm Stressed laser scanning device using light polarizers
US3301716A (en) * 1964-09-10 1967-01-31 Rca Corp Semiconductor device fabrication
DE1295739B (de) * 1964-11-28 1969-05-22 Deutsche Bundespost Optischer Sender mit einer Halbleiterdiode als stimulierbares Medium (Injektionslaserdiode)
US3385970A (en) * 1964-12-18 1968-05-28 Bunker Ramo Nonreciprocal signal coupling apparatus using optical coupling link in waveguide operating below cutoff
US3365630A (en) * 1965-01-29 1968-01-23 Bell Telephone Labor Inc Electroluminescent gallium phosphide crystal with three dopants
US3399313A (en) * 1965-04-07 1968-08-27 Sperry Rand Corp Photoparametric amplifier diode
US3385981A (en) * 1965-05-03 1968-05-28 Hughes Aircraft Co Double injection two carrier devices and method of operation
DE1298216B (de) * 1965-06-30 1969-06-26 Siemens Ag Laser-Diode
US3568087A (en) * 1965-07-16 1971-03-02 Massachusetts Inst Technology Optically pumped semiconductor laser
US3417246A (en) * 1965-07-26 1968-12-17 Gen Electric Frequency modulated semiconductor junction laser
US3427211A (en) * 1965-07-28 1969-02-11 Ibm Process of making gallium phosphide dendritic crystals with grown in p-n light emitting junctions
US3484716A (en) * 1965-10-01 1969-12-16 Gen Electric High duty cycle laser device
US3521073A (en) * 1965-11-26 1970-07-21 Gen Dynamics Corp Light emitting semiconductor diode using the field emission effect
US3387163A (en) * 1965-12-20 1968-06-04 Bell Telephone Labor Inc Luminescent semiconductor devices including a compensated zone with a substantially balanced concentration of donors and acceptors
US3341708A (en) * 1965-12-27 1967-09-12 Robert R Bilderback Amplitude modulated laser transmitter
US3303432A (en) * 1966-04-18 1967-02-07 Gen Electric High power semiconductor laser devices
US3524066A (en) * 1966-08-22 1970-08-11 Monsanto Co Fluid measurement system having sample chamber with opposed reflecting members for causing multiple reflections
US3484854A (en) * 1966-10-17 1969-12-16 Westinghouse Electric Corp Processing semiconductor materials
US3459942A (en) * 1966-12-05 1969-08-05 Gen Electric High frequency light source
GB1176410A (en) * 1966-12-14 1970-01-01 Hitachi Ltd A Solid State Generator-Detector of Electromagnetic Waves
FR1518717A (fr) * 1966-12-21 1968-03-29 Radiotechnique Coprim Rtc Perfectionnements aux diodes électroluminescentes
US3483487A (en) * 1966-12-29 1969-12-09 Bell Telephone Labor Inc Stress modulation of electromagnetic radiation in semiconductors,with wide range of frequency tuning
US3501679A (en) * 1967-02-27 1970-03-17 Nippon Electric Co P-n junction type light-emitting semiconductor
US3546467A (en) * 1967-04-21 1970-12-08 Bionic Instr Inc Typhlocane with range extending obstacle sensing devices
US3479613A (en) * 1967-04-28 1969-11-18 Us Navy Laser diode and method
US3541375A (en) * 1967-06-07 1970-11-17 Gen Electric Barrier layer electroluminescent devices
US3526851A (en) * 1967-07-10 1970-09-01 Rca Corp Filamentary structure injection laser having a very narrow active junction
FR1537810A (fr) * 1967-07-13 1968-08-30 Automatisme Cie Gle Dispositif optique de lecture de code
DE1614846B2 (de) * 1967-07-26 1976-09-23 Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm Halbleiterdiodenanordnung
US3585520A (en) * 1967-09-13 1971-06-15 Hitachi Ltd Device for generating pulsed light by stimulated emission in a semiconductor triggered by the formation and transit of a high field domain
JPS4813994B1 (en:Method) * 1968-03-15 1973-05-02
US3597755A (en) * 1968-05-28 1971-08-03 Sanders Associates Inc Active electro-optical intrusion alarm system having automatic balancing means
US3537029A (en) * 1968-06-10 1970-10-27 Rca Corp Semiconductor laser producing light at two wavelengths simultaneously
DE1789061A1 (de) * 1968-09-30 1971-12-23 Siemens Ag Laserdiode
US3539945A (en) * 1969-03-25 1970-11-10 Us Army Methods of modulating injection diodes for maximum optical power
US3605037A (en) * 1969-05-02 1971-09-14 Bell Telephone Labor Inc Curved junction laser devices
US3573654A (en) * 1969-07-18 1971-04-06 Us Navy Narrow band tunable laser oscillator amplifier
US3579130A (en) * 1969-07-18 1971-05-18 Vern N Smiley Thin film active interference filter
US3579142A (en) * 1969-07-18 1971-05-18 Us Navy Thin film laser
AT300307B (de) * 1970-02-26 1972-07-25 Pass & Sohn Gummiwerk Aufrollbarer Stabrost
US3660669A (en) * 1970-04-15 1972-05-02 Motorola Inc Optical coupler made by juxtaposition of lead frame mounted sensor and light emitter
US3675150A (en) * 1970-06-30 1972-07-04 Ibm Internal modulation of injection lasers using acoustic waves
US3739301A (en) * 1971-06-30 1973-06-12 Us Army Single diode single sideband modulator
US3747016A (en) * 1971-08-26 1973-07-17 Rca Corp Semiconductor injection laser
US3736410A (en) * 1971-12-06 1973-05-29 American Regitel Corp Hand held apparatus for sensing data bits carried on a sheet
US3901738A (en) * 1973-12-20 1975-08-26 Hughes Aircraft Co Ion implanted junction laser and process for making same
US3936322A (en) * 1974-07-29 1976-02-03 International Business Machines Corporation Method of making a double heterojunction diode laser
US4393393A (en) * 1979-08-13 1983-07-12 Mcdonnell Douglas Corporation Laser diode with double sided heat sink
US4435671A (en) 1982-04-26 1984-03-06 Eli, Inc. Device for prolonging the life of an incandescent lamp
DE3728566A1 (de) * 1987-08-27 1989-03-09 Telefunken Electronic Gmbh Optoelektronisches halbleiterbauelement
WO2022200183A1 (en) 2021-03-24 2022-09-29 Element Six Technologies Limited Laser diode assembly and a method of assembling such a laser diode assembly

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2890976A (en) * 1954-12-30 1959-06-16 Sprague Electric Co Monocrystalline tubular semiconductor
DE1248826B (en:Method) * 1958-04-30
US3102201A (en) * 1958-12-15 1963-08-27 Rca Corp Semiconductor device for generating modulated radiation
NL247746A (en:Method) * 1959-01-27
USRE25632E (en) * 1960-01-11 1964-08-18 Optical maser

Also Published As

Publication number Publication date
GB1044586A (en) 1966-10-05
DE1180458B (de) 1964-10-29
FR1385449A (fr) 1965-01-15
NL139425B (nl) 1973-07-16
NL299675A (en:Method) 1900-01-01
SE317453B (en:Method) 1969-11-17
US3245002A (en) 1966-04-05

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