DK101428C - Fladediode med tunnelvirkning og fremgangsmåde ved dens fremstilling. - Google Patents

Fladediode med tunnelvirkning og fremgangsmåde ved dens fremstilling.

Info

Publication number
DK101428C
DK101428C DK29860AA DK29860A DK101428C DK 101428 C DK101428 C DK 101428C DK 29860A A DK29860A A DK 29860AA DK 29860 A DK29860 A DK 29860A DK 101428 C DK101428 C DK 101428C
Authority
DK
Denmark
Prior art keywords
manufacture
surface diode
tunnel action
tunnel
action
Prior art date
Application number
DK29860AA
Other languages
English (en)
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Application granted granted Critical
Publication of DK101428C publication Critical patent/DK101428C/da

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/88—Tunnel-effect diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Weting (AREA)
DK29860AA 1959-01-27 1960-01-26 Fladediode med tunnelvirkning og fremgangsmåde ved dens fremstilling. DK101428C (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US789286A US3131096A (en) 1959-01-27 1959-01-27 Semiconducting devices and methods of preparation thereof

Publications (1)

Publication Number Publication Date
DK101428C true DK101428C (da) 1965-04-05

Family

ID=25147183

Family Applications (1)

Application Number Title Priority Date Filing Date
DK29860AA DK101428C (da) 1959-01-27 1960-01-26 Fladediode med tunnelvirkning og fremgangsmåde ved dens fremstilling.

Country Status (9)

Country Link
US (1) US3131096A (da)
BE (1) BE586899A (da)
CH (1) CH403989A (da)
DE (1) DE1113035B (da)
DK (1) DK101428C (da)
ES (1) ES255309A1 (da)
FR (1) FR1246041A (da)
GB (1) GB942453A (da)
NL (1) NL247746A (da)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL250879A (da) * 1959-08-05
GB914832A (en) * 1959-12-11 1963-01-09 Gen Electric Improvements in semiconductor devices and method of fabricating the same
US3276925A (en) * 1959-12-12 1966-10-04 Nippon Electric Co Method of producing tunnel diodes by double alloying
DE1175797B (de) * 1960-12-22 1964-08-13 Standard Elektrik Lorenz Ag Verfahren zum Herstellen von elektrischen Halb-leiterbauelementen
DE1185729B (de) * 1961-03-01 1965-01-21 Siemens Ag Esaki-Diode mit Oberflaechenschutz des pn-UEbergangs
DE1240996B (de) * 1961-03-24 1967-05-24 Siemens Ag Verfahren zum Herstellen eines beiderseits hochdotierten pn-UEbergangs fuer Halbleiteranordnungen
US3211923A (en) * 1962-03-13 1965-10-12 Westinghouse Electric Corp Integrated semiconductor tunnel diode and resistance
US3258660A (en) * 1962-06-20 1966-06-28 Tunnel diode devices with junctions formed on predetermined paces
US3259815A (en) * 1962-06-28 1966-07-05 Texas Instruments Inc Gallium arsenide body containing copper
BE635380A (da) * 1962-07-24
NL297836A (da) * 1962-09-14
BE639066A (da) * 1962-10-24 1900-01-01
DE1489245B1 (de) * 1963-05-20 1970-10-01 Rca Corp Verfahren zum Herstellen von Flaechentransistoren aus III-V-Verbindungen
US3355335A (en) * 1964-10-07 1967-11-28 Ibm Method of forming tunneling junctions for intermetallic semiconductor devices

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2847335A (en) * 1953-09-15 1958-08-12 Siemens Ag Semiconductor devices and method of manufacturing them
US2936256A (en) * 1954-06-01 1960-05-10 Gen Electric Semiconductor devices
US2843515A (en) * 1955-08-30 1958-07-15 Raytheon Mfg Co Semiconductive devices
NL216979A (da) * 1956-05-18
US2878152A (en) * 1956-11-28 1959-03-17 Texas Instruments Inc Grown junction transistors
NL224440A (da) * 1957-03-05
US2929753A (en) * 1957-04-11 1960-03-22 Beckman Instruments Inc Transistor structure and method
US2974072A (en) * 1958-06-27 1961-03-07 Ibm Semiconductor connection fabrication

Also Published As

Publication number Publication date
NL247746A (da)
CH403989A (de) 1965-12-15
BE586899A (fr) 1960-05-16
FR1246041A (fr) 1960-11-10
DE1113035B (de) 1961-08-24
ES255309A1 (es) 1960-08-16
GB942453A (en) 1963-11-20
US3131096A (en) 1964-04-28

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